Mitsubishi Electric Corporation

Tetsuo Motomiya

Jun Okada

Yukimasa Hayashida

Daisuke Oya

Yoshihiro Yamaguchi

Tetsuya Matsuda

Seiji Oka

Kazunori Taguchi

Hiroki Shiota

Yoshiko Tamada

Kenji Hatori

Shigeto Fujita

Shuichi Kitamura

Kunihiko Tajiri

Kazutake Kadowaki

Hiroumi Yamada

An object of the present invention is to provide a power semiconductor device enabling a downsizing of a module. A power semiconductor device according to the present invention includes: emitter main electrodes each provided in each of a plurality of semiconductor chips; and main electrode emitter sense terminals directly connected to each of the emitter main electrodes and partially exposed outside a module, wherein each of the main electrode emitter sense terminals is located diagonally to each other, and a distance from each of the main electrode emitter sense terminals to each of the emitter main electrodes connected to each of the main electrode emitter sense terminals is smaller than a distance between the main electrode emitter sense terminals in a plan view outside the module.

Power semiconductor device

The present invention has an object to enhance manufacturability of a pressure-contact-type semiconductor device. A pressure-contact-type semiconductor device according to the present invention includes: a semiconductor chip, the semiconductor chip including a guard ring and a gate signal input/output part in the first main surface; a first external electrode being formed on a side of the first main surface of the semiconductor chip; a conductive pattern being formed on the first external electrode; a contact pin connecting the gate signal input/output part and the conductive pattern; a plate-like electrode being provided on the second main surface of the semiconductor chip; a disc spring being provided on the plate-like electrode; and a second external electrode being provided on the disc spring, the second external electrode and the first external electrode interposing the semiconductor chip.

Pressure-contact-type semiconductor device

A semiconductor device includes: an inner frame that surrounds an outer circumference of a semiconductor chip; and an outer frame that surrounds an outer circumference of the inner frame; wherein the outer frame is configured with an exterior wall that surrounds the outer circumference of the inner frame, and a fibrous reinforcing member that is wound on an outer circumference of the exterior wall. This prevents the broken pieces of a component that constitutes the semiconductor device from being scattered outside the semiconductor device, thereby not only to achieve improvement in the reliability of the entire system, but also to achieve downsizing of the semiconductor device.

Semiconductor device

A semiconductor device includes a first electrode; a second electrode; a resin case surrounding the first electrode and the second electrode; and a resin insulating part made of a material the same as a material of the resin case and covering part of the first electrode and part of the second electrode inside the resin case. The resin insulating part contacts an inner wall of the resin case or is separated from the inner wall of the resin case. A move positioned between the first electrode and the second electrode is formed at the resin insulating part, and thus a space in which the resin insulating part does not exist or a material different from the resin insulating part is provided between the first electrode and the second electrode.

Semiconductor device including a groove within a resin insulating part positioned between and covering parts of a first electrode and a second electrode

There has been a problem that a chip or a power module is broken by a repulsive electromagnetic force between positive and negative bus bars and an arc is generated, so that the failure is escalated. Therefore, positive and negative bus bars connecting two devices are configured so as to form a one-turn-loop current path, thereby suppressing a repulsive electromagnetic force occurring between the bus bars and decreasing a possibility of occurrence of an arc at the power module.

Bus bar structure and power conversion device using same

It is an object to provide a pressure-contact power semiconductor device and a power semiconductor core module which are capable of properly reducing their sizes. Each power semiconductor core module includes the following: a plurality of power semiconductor chips including a plurality of self-turn-off semiconductor elements and a plurality of diodes adjacent to each other in plan view; and a plurality of first springs disposed between an upper metal plate and a conductive cover plate. The plurality of self-turn-off semiconductor elements of each power semiconductor core module are arranged along any one of an L-shaped line, a cross-shaped line, and a T-shaped line in plan view.

Power semiconductor device and power semiconductor core module

An object is to provide a technique that enables suppression of oscillation of a gate signal waveform. A power semiconductor device includes a power semiconductor chip, a plurality of collector main terminals and a plurality of emitter main terminals electrically connected to the power semiconductor chip, and a signal line. The plurality of collector main terminals and the plurality of emitter main terminals have protrusion portions which protrude from a disposition surface of the power semiconductor chip, respectively, and the signal line surrounds, with respect to these protrusion portions, an entire circumference of all the protrusion portions and is spaced apart therefrom in plan view.

Growing community of inventors

Tokyo, Japan

Tetsuo Motomiya