Fujitsu Corporation

Tetsuo Izawa

Hiroshi Goto

Koichi Hashimoto

Kazuo Sukegawa

Tetsuo Yoshimura

Yasunori Iriyama

Shinji Kuzuya

Shinichi Kawai

Hiromi Hayashi

Tatsuya Yamazaki

Atsuo Fushida

Masaki Katsube

A semiconductor device formed on a SOI substrate includes isolation trenches formed in a first region and reaching an insulation layer buried in the SOI substrate, and alignment marks formed in a second region and consisting of grooves extending into a support substrate.

Semiconductor device and fabrication process thereof

A semiconductor device comprises a first transistorhaving a first gate electrode; a second transistorhaving a second gate electrodewhich is different from the first gate electrode; an insulation filmformed between the first gate electrode and the second gate electrode; and an interconnection electrodeburied in a concavityformed in the first gate electrode, the second gate electrode and the insulation film and electrically interconnecting the first gate electrode and the second gate electrode. The interconnection electrode is buried in the concavity formed in the first gate electrode, the second gate electrode and the insulation film, and the interconnection electrodes electrically interconnects the first gate electrode and the second gate electrode, whereby the semiconductor device can have high integration and can be reliable.

Semiconductor device and method for fabricating the same including interconnection of two electrodes

A semiconductor device comprises a first transistor having a first gate electrode ; a second transistor having a second gate electrode which is different from the first gate electrode; an insulation film formed between the first gate electrode and the second gate electrode; and an interconnection electrode buried in a concavity formed in the first gate electrode, the second gate electrode and the insulation film and electrically interconnecting the first gate electrode and the second gate electrode. The interconnection electrode is buried in the concavity formed in the first gate electrode, the second gate electrode and the insulation film, and the interconnection electrodes electrically interconnects the first gate electrode and the second gate electrode, whereby the semiconductor device can have high integration and can be reliable.

Semiconductor device and method for fabricating the same

A method for fabricating a semiconductor integrated circuit includes the steps of providing a conductor film on a substrate, providing an insulator film on the conductor film to form a layered structure, removing the insulator film selectively from a first part thereof corresponding to a conductor pattern to be formed, while remaining the insulator film on a second part thereof corresponding also to a conductor pattern to be formed, patterning the layered structure to form a conductor pattern defined by side walls, providing a side wall insulation to each of the side walls of the conductor pattern, providing a first local interconnect pattern on the first part of the conductor pattern such that the first local interconnect pattern establishes an electrical connection with the conductor pattern at the first part, and providing a second local interconnect pattern on the second part of the conductor pattern such that the second local interconnect pattern bridges across the conductor pattern at the second part, without establishing electrical connection therewith.

Enhanced semiconductor integrated circuit device with a memory array and

Fabrication process of a semiconductor integrated circuit device having

On a semiconductor substrate with an exposed silicon region, a metal layer such as Co is deposited and a silicide layer is formed by heat treatment. Thereafter, a metal layer such as Ni and a silicon layer are deposited, and one of them is patterned. The metal layer and silicon layer are heated for silicification to form a local interconnect. A semiconductor device manufacturing method is provided which uses salicide technique and can form a local interconnect of good quality.

Method of making a semiconductor device having a silicide local

A high speed and highly functional MOSFET having a thin channel formed in a single crystalline layer is controlled by voltages applied to both an upper gate electrode and a buried gate layer that sandwich the channel therebetween.

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Kawasaki, Japan

Tetsuo Izawa