Sharp Kabushiki Kaisha Corporation

Tetsuo Fukaya

Yoshito Hashimoto

Yusuke Nishihara

Tsuyoshi Inoue

Kenji Nakanishi

Yohsuke Kanzaki

Tetsuya Okamoto

Kazuhiko Tsuda

Masao Moriguchi

Masahiro Shimizu

Michiko Takei

Yoshiki Nakatani

Yudai Takanishi

Takatsugu Kusumi

Hideki Fujimoto

A liquid crystal display device includes a plurality of pixels arranged in a matrix pattern, each pixel including a first electrode and a second electrode for generating a transverse electric field, wherein: in a first group of pixels arranged in a line along either a row direction or a column direction, pairs of pixels are arranged repeatedly, each pair of pixels including two adjacent pixels that are different from each other in terms of an electrode structure of at least one of the first electrode and the second electrode; and voltages of the same polarity are applied to the two adjacent pixels included in the pair of pixels, and voltages of different polarities from each other are applied to two pixel pairs adjacent to each other in the first group of pixels.

Liquid crystal display device

The present invention provides a fringe field switching (FFS) mode liquid crystal display device that makes it possible to improve transmittance when a voltage is applied. The fringe field switching mode liquid crystal display device of the present invention includes: a first substrate; a second substrate arranged facing the first substrate; and a liquid crystal layer sandwiched between the first substrate and the second substrate, wherein the first substrate includes, in order, a plurality of pixel electrodes, an insulating film covering the plurality of pixel electrodes, and a common electrode that is layered on top of the plurality of pixel electrodes and has a plurality of parallel slits formed therein, wherein steps that protrude towards a liquid crystal layer side are formed in the first substrate in at least sides of regions between the plurality of pixel electrodes that are parallel to a lengthwise direction of the plurality of parallel slits, and wherein the common electrode covers at least side faces of the steps.

A TFTincludes a gate electrode, a gate insulating film, a semiconductor layer, a source electrode, a drain electrode, etc. The semiconductor layeris comprised of a metal oxide semiconductor (IGZO), and has a source portionthat contacts the source electrode, a drain electrodethat contacts the drain electrode, and a channel portionthat is located between the source and drain portions. A reduced regionis formed at least in the channel portionof the semiconductor layer, and the reduced regionhas a higher content of a simple substance of a metal such as In than the remaining portion of the semiconductor layer

Thin film transistor

Growing community of inventors

Osaka, Japan

Tetsuo Fukaya