University of California

Japan Science and Technology Agency

Tetsuo Fujii

Shuji Nakamura

Evelyn Lynn Hu

Yan Gao

Evelyn Hu

Evelyn L Hu

A gallium nitride (GaN) based light emitting diode (LED), wherein light is extracted through a nitrogen face (N-face) of the LED and a surface of the N-face is roughened into one or more hexagonal shaped cones. The roughened surface reduces light reflections occurring repeatedly inside the LED, and thus extracts more light out of the LED. The surface of the N-face is roughened by an anisotropic etching, which may comprise a dry etching or a photo-enhanced chemical (PEC) etching.

Highly efficient gallium nitride based light emitting diodes via surface roughening

A gallium nitride (GaN) based light emitting diode (LED), wherein light is extracted through a nitrogen face (N-face) () of the LED and a surface of the N-face () is roughened into one or more hexagonal shaped cones. The roughened surface reduces light reflections occurring repeatedly inside the LED, and thus extracts more light out of the LED. The surface of the N-face () is roughened by an anisotropic etching, which may comprise a dry etching or a photo-enhanced chemical (PEC) etching.

Highly efficient group-III nitride based light emitting diodes via fabrication of structures on an N-face surface

Growing community of inventors

Goleta, CA, United States of America

Tetsuo Fujii