Denso Corporation

Nippondenso Co., Ltd.

Toyota Jidosha Kabushiki Kaisha

Denso Corpora Tion

Nippondenso Corporation

Nippondense Co., Ltd.

Tetsuo Fujii

Masahito Imai

Minekazu Sakai

Kazuhiko Sugiura

Susumu Kuroyanagi

Akira Kuroyanagi

Hisanori Yokura

Nozomu Akagi

Yoshiyuki Hattori

Kenichi Ao

Takeshi Ito

Hirofumi Higuchi

Tameharu Ohta

Makoto Asai

Shinji Yoshihara

Masakiyo Sumitomo

Yasushi Higuchi

Makoto Kuwahara

Masaya Tanaka

Yoshitaka Gotoh

Muneo Tamura

Itaru Ishii

Keisuke Gotoh

Masanobu Azukawa

Tsuyoshi Fukada

Hitoshi Yamaguchi

Yasuyuki Okuda

Takashi Nakano

Akitoshi Yamanaka

Masao Yamada

Yasuhiro Kitamura

Sumitomo Inomata

Tsuyoshi Yamamoto

Makiko Sugiura

Shigeki Takahashi

Kenji Kouno

Yukio Tsuzuki

Kuniaki Mamitsu

Shoji Mizuno

Hiroki Nakamura

Toshio Sakakibara

Jun Sakakibara

Nobuyoshi Sakakibara

Yoshihiko Ozeki

Kenichi Yokoyama

Hiroshi Muto

Hiroyuki Yamane

Osamu Ina

Yukihiro Maeda

Eishi Kawasaki

Masaki Inoue

Atsushi Komura

Rie Taguchi

Kenji Fukumura

Hirotaka Saikaku

Hiroaki Tanaka

Yasutoshi Suzuki

Takahiko Yoshida

Yasuaki Makino

Seiichiro Ishio

Tiaki Mizuno

Satoshi Shiraki

Masayoshi Nishihata

Yoshimi Yoshino

Takaaki Aoki

Kinya Atsumi

Makio Iida

Takanori Teshima

Keiichi Shimaoka

Hiroshi Iwasaki

Kingo Okada

Masaei Nozawa

Satoshi Yoshimura

Teruo Oda

Takumi Shibata

Mitsutaka Katada

Yoshihiko Isobe

Tetsuo Yoshioka

Keiji Horiba

Takashi Nomura

Masanori Naganoma

Kyoko Okada

Tomofusa Shiga

Takaaki Kawai

Takeshi Yamauchi

Akira Tai

Kazuo Akamatsu

Kouji Kondoh

Shinichi Hirose

Satoshi Oohira

Hirofumi Funahashi

Daisuke Fukuoka

Hirohito Shioya

Kenji Kohno

Nobuo Kondo

Yumi Maruyama

Yasuki Shimoyama

Takayoshi Naruse

Hirotsugu Funato

Kiwamu Naito

A semiconductor device includes a switching element having: a drift layer; a base region; an element-side first impurity region in the base region; an element-side gate electrode sandwiched between the first impurity region and the drift layer; a second impurity region contacting the drift layer; an element-side first electrode coupled with the element-side first impurity region and the base region; and an element-side second electrode coupled with the second impurity region, and a FWD having: a first conductive layer; a second conductive layer; a diode-side first electrode coupled to the second conductive layer; a diode-side second electrode coupled to the first conductive layer; a diode-side first impurity region in the second conductive layer; and a diode-side gate electrode in the second conductive layer sandwiched between first impurity region and the first conductive layer and having a first gate electrode as an excess carrier injection suppression gate.

Semiconductor device having switching element and free wheel diode and method for controlling the same

A physical quantity sensor includes a sensor portion, a casing, and a vibration isolator. The casing includes a supporting portion with a supporting surface that is located to face an end surface of the sensor portion. The vibration isolator is located between the end surface of the sensor portion and the supporting surface of the casing to join the sensor portion to the casing. The vibration isolator reduces a relative vibration between the sensor portion and the casing.

Physical quantity sensor and method of making the same

A semiconductor device includes a lead frame, a semiconductor chip, a substrate, a plurality of chip parts, a plurality of wires, and a resin member. The lead frame includes a chip mounted section and a plurality of lead sections. The semiconductor chip is mounted on the chip mounted section. The substrate is mounted on the chip mounted section. The chip parts are mounted on the substrate. Each of the chip parts has a first end portion and a second end portion in one direction, and each of the chip parts has a first electrode at the first end portion and a second electrode at the second end portion. Each of the wires couples the second electrode of one of the chip parts and one of the lead sections. The resin member covers the lead frame, the semiconductor chip, the substrate, the chip parts, and the wires.

Semiconductor device including semiconductor chip mounted on lead frame

A semiconductor device includes a base substrate made of silicon, a cap substrate and a leading electrode having a metal part. The base substrate has base semiconductor regions being insulated and separated from each other at a predetermined portion of a surface layer thereof. The cap substrate is bonded to the predetermined portion of the surface layer of the base substrate. The leading electrode has a first end connected to one of the plurality of base semiconductor regions of the base substrate and extends through the cap substrate such that a second end of the leading electrode is located adjacent to a surface of the cap substrate for allowing an electrical connection with an external part, the surface being opposite to a bonding surface at which the base substrate and the cap substrate are bonded. The leading electrode defines a groove between an outer surface thereof and the cap substrate.

Semiconductor device and method of manufacturing the same

A dynamic quantity sensor device includes: first and second dynamic quantity sensors having first and second dynamic quantity detecting units; and first and second substrates, which are bonded to each other to provide first and second spaces. The first and second units are air-tightly accommodated in the first and second spaces, respectively. A SOI layer of the first substrate is divided into multiple semiconductor regions by trenches. First and second parts of the semiconductor regions provide the first and second units, respectively. The second part includes: a second movable semiconductor region having a second movable electrode, which is provided by a sacrifice etching of the embedded oxide film; and a second fixed semiconductor region having a second fixed electrode. The second sensor detects the second dynamic quantity by measuring a capacitance between the second movable and fixed electrodes, which is changeable in accordance with the second dynamic quantity.

Dynamic quantity sensor device and manufacturing method of the same

A semiconductor device includes: a SOI substrate including a support layer, a first insulation film and a SOI layer; a first circuit; a second circuit; and a trench separation element. The SOI substrate further includes a first region and a second region. The first region has the support layer, the first insulation film and the SOI layer, which are stacked in this order, and the second region has only the support layer. The trench separation element penetrates the support layer, the first insulation film and the SOI layer. The trench separation element separates the first region and the second region. The first circuit is disposed in the SOI layer of the first region. The second circuit is disposed in the support layer of the second region.

Method for manufacturing semiconductor device having SOI substrate

A semiconductor device includes a sensor portion, a cap portion, and an ion-implanted layer. The sensor portion has a sensor structure at a surface portion of a surface. The cap portion has first and second surfaces opposite to each other and includes a through electrode. The surface of the sensor portion is joined to the first surface of the cap portion such that the sensor structure is sealed between the sensor portion and the cap portion. The ion-implanted layer is located on the second surface of the cap portion. The through electrode extends from the first surface to the second surface and is exposed through the ion-implanted layer.

Method of making semiconductor device

In a semiconductor physical quantity sensor, a pattern portion including a wiring pattern as a wiring is formed on a surface of a first semiconductor substrate. A support substrate having a surface made of an electrically insulating material is prepared. The first semiconductor substrate is joined to the support substrate by bonding the pattern portion to the surface of the support substrate. Further, a sensor structure is formed in the first semiconductor substrate. The sensor structure is electrically connected to the wiring pattern. A cap is bonded to the first semiconductor substrate such that the sensor structure is hermetically sealed.

Semiconductor physical quantity sensor

A region-divided substrate includes: a substrate having a first surface and a second surface opposite to the first surface and having a plurality of partial regions, which are divided by a plurality of trenches, wherein each trench penetrates the substrate from the first surface to the second surface; a conductive layer having an electrical conductivity higher than the substrate and disposed on a sidewall of one of the plurality of partial regions from the first surface to the second surface; and an insulator embedded in each trench.

Region-divided substrate, semiconductor device having region-divided substrate, and method for manufacturing the same

A semiconductor device includes a semiconductor substrate that includes a plurality of section having different thicknesses. The sections include a first section having a first thickness and a second section having a second thickness, the second section is the thinnest section among all the sections, and the first thickness is greater than the second thickness. A plurality of isolation trenches penetrates the semiconductor substrate for defining a plurality of element-forming regions in the first section and the second section. A plurality of elements is located at respective ones of the plurality of element-forming regions. The elements include a double-sided electrode element that includes a pair of electrodes separately disposed on the first surface and the second surface, and the double-sided electrode element is located in the second section.

Semiconductor device having a plurality of elements on one semiconductor substrate and method of manufacturing the same

A physical quantity detection device includes: an insulating layer; a semiconductor layer on the insulating layer; and first and second electrodes in the semiconductor layer. Each electrode has a wall part, one of which includes two diaphragms and a cover part. The diaphragms facing each other provide a hollow cylinder having an opening covered by the cover part. One diaphragm faces the other wall part or one diaphragm in the other wall part. A distance between the one diaphragm and the other wall part or the one diaphragm in the other wall part is changed with pressure difference between reference pressure in the hollow cylinder and pressure of an outside when a physical quantity is applied to the diaphragms. The physical quantity is detected by a capacitance between the first and second electrodes.

Physical quantity detection device and method for manufacturing the same

An electric device includes: a circuit board arranged in cooling medium in a housing and having an electric element and an external coupling electrode, wherein the electric element is sealed in and mounted in a substrate, and the electric element is electrically coupled with the external coupling electrode; an external coupling terminal electrically coupled with the external coupling electrode; and a separation member for separating the external coupling terminal and a connection portion between the external coupling electrode and the external coupling terminal away from the cooling medium.

Electric device mounted in electric compressor

Growing community of inventors

Toyohashi, Japan

Tetsuo Fujii