Sony Corporation

Tetsuo Ando

Hiroyuki Matsumoto

Hiroshi Yamazaki

Osamu Akimoto

Motoaki Abe

Yasuo Kano

A display apparatus employing a field emission type cathode includes an anode electrode, a first constant voltage source for applying a first constant voltage on the anode electrode, a phosphor element coated on the anode electrode, a gate electrode arranged for facing said phosphor element, a second constant voltage source for applying a second voltage lower than the first voltage to the gate electrode, a cathode electrode arranged for facing the phosphor element via the gate electrode, an insulator arranged for facing the phosphor element via the gate electrode, a current source electrically connected to the cathode electrode, and a cathode arranged on said cathode electrode for facing said phosphor element. The current value of the current source is controlled in proportion to a third voltage applied to the current source.

Display apparatus

In a charge transfer device in which a plurality of electrodes are located on an insulating layer formed on a semiconductor substrate and an input portion and a transfer portion are provided, a predetermined amount of charge determined by a potential applied to the input portion is introduced into the portion beneath a predetermined electrode while driving an electrode on the transfer portion, such a potential is applied to all of the plurality of electrodes that surface areas of the substrate beneath the electrodes each become an accumulation state to thereby inject the predetermined amount of charge into the substrate, and a potential is applied to the electrodes after a predetermined period of time to partially catch injected charge beneath the electrodes and to use caught charge as a bias charge. A solid state image pick-up apparatus is also disclosed which includes the above-mentioned charge transfer device and carries out their operation in the vertical blanking period.

Charge transfer device imager with bias charge

A solid state image sensing device having a semiconductor substrate, an insulating layer disposed on one major surface of the substrate, plural channel stopper regions formed in the substrate in faced relation to the major surface of the substrate, each channel stopper region being extended in the column direction with a distance between adjacent ones and plural sets of electrodes disposed over the insulating layer, each set including a pair of electrode members, each electrode member being extended in the row direction, in which a window portion is formed in the pair of electrode members at one side of the distance between adjacent channel stopper regions and the width of the window portion in the column direction is selected more than a predetermined value.

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Ebina, Japan

Tetsuo Ando