National Institute of Advanced Industrial Science and Technology

Sumitomo Chemical Company, Limited

Rohm Co., Ltd.

The University of Tokyo

Intel Corporation

Renesas Technology Corp.

Horiba, Ltd.

Tetsuji Yasuda

Masahiko Hata

Shinichi Takagi

Toshihide Nabatame

Masafumi Yokoyama

Hisashi Yamada

Kunihiko Iwamoto

Mitsuru Takenaka

Koji Tominaga

Yuji Urabe

Noboru Fukuhara

Tatsuro Maeda

Noriyuki Miyata

Ronald John Kuse

Hiroyuki Ota

Hideki Takagi

Shinichi Ouchi

Yongxun Liu

Meishoku Masahara

Taro Itatani

Hanpei Koike

Kazuhiko Endo

Toshihiro Katashita

Osamu Ichikawa

Yohei Hori

Takeshi Aoki

Hiroyuki Ishii

Koichi Fukuda

Yasuhiro Ogasahara

SangHyeon Kim

Toshifumi Irisawa

A semiconductor deviceof the present invention includes a front end and back ends A and B, each including a plurality of layers. Further, in the plurality of layers of the back end B, (i) circuits, andhaving a security function are provided in at least one layer having a wiring pitch of 100 nm or more, (ii) a circuit having a security function is provided in at least one wiring layer in M5 or higher level (M5, M6, M7, . . . ), (iii) a circuit having a security function is provided in at least one layer, for which immersion ArF exposure does not need to be used, or (iv) a circuit having a security function is provided in at least one layer that is exposed by using an exposure wavelength of 200 nm or more.

Semiconductor device including circuit having security function

There is provided a method of producing a semiconductor wafer, including: forming a compound semiconductor layer on a base wafer by epitaxial growth; cleansing a surface of the compound semiconductor layer by means of a cleansing agent containing a selenium compound; and forming an insulating layer on the surface of the compound semiconductor layer. Examples of the selenium compound include a selenium oxide. Examples of the selenium oxide include HSeO. The cleansing agent may further contain one or more substances selected from the group consisting of water, ammonium, and ethanol. When the surface of the compound semiconductor layer is made of InGaAs (0&#x2266;x&#x2266;1), the insulating layer is preferably made of AlO, and AlOis preferably formed by ALD.

Method of producing semiconductor wafer, and semiconductor wafer

A semiconductor substrate includes a substrate, an insulating layer, and a semiconductor layer. The insulating layer is over and in contact with the substrate. The insulating layer includes at least one of an amorphous metal oxide and an amorphous metal nitride. The semiconductor layer is over and in contact with the insulating layer. The semiconductor layer is formed by crystal growth.

Semiconductor substrate, field-effect transistor, integrated circuit, and method for fabricating semiconductor substrate

Provided is a semiconductor wafer including a base wafer, a first insulating layer, and a semiconductor layer. Here, the base wafer, the first insulating layer and the semiconductor layer are arranged in an order of the base wafer, the first insulating layer and the semiconductor layer, the first insulating layer is made of an amorphous metal oxide or an amorphous metal nitride, the semiconductor layer includes a first crystal layer and a second crystal layer, the first crystal layer and the second crystal layer are arranged in an order of the first crystal layer and the second crystal layer in such a manner that the first crystal layer is positioned closer to the base wafer, and the electron affinity Eof the first crystal layer is larger than the electron affinity Eof the second crystal layer.

Semiconductor wafer, field-effect transistor, method of producing semiconductor wafer, and method of producing field-effect transistor

Provided is a field-effect transistor including a gate insulating layer, a first semiconductor crystal layer in contact with the gate insulating layer, and a second semiconductor crystal layer lattice-matching or pseudo lattice-matching the first semiconductor crystal layer. Here, the gate insulating layer, the first semiconductor crystal layer, and the second semiconductor crystal layer are arranged in the order of the gate insulating layer, the first semiconductor crystal layer, and the second semiconductor crystal layer, the first semiconductor crystal layer is made of InGaAsP(0&#x3c;x1&#x2266;1, 0&#x2266;y1&#x2266;1), the second semiconductor crystal layer is made of InGaAsP(0&#x2266;x2&#x2266;1, 0&#x2266;y2&#x2266;1, y2&#x2260;y1), and the electron affinity Eof the first semiconductor crystal layer is lower than the electron affinity Eof the second semiconductor crystal layer.

Field-effect transistor, semiconductor wafer, method for producing field-effect transistor and method for producing semiconductor wafer

A method of manufacturing a metal compound thin film is disclosed. The method may include forming a first metal compound layer on a substrate by atomic layer deposition, performing annealing on the first metal compound layer in an atmosphere containing a nitrogen compound gas, thereby diffusing nitrogen into the first metal compound layer, and forming a second metal compound layer on the first metal compound layer by atomic layer deposition.

Semiconductor device, method of manufacturing the same, and method of manufacturing metal compound thin film

A dielectric layer may be formed by depositing the dielectric layer to an intermediate thickness and applying a nitridation process to the dielectric layer of intermediate thickness. The dielectric layer may then be deposited to the final, desired thickness.

Method for forming a dielectric layer and related devices

A metal atomic layer and an oxygen atomic layer are formed in this order by ALD, followed by rapid heating through RTA (Rapid Thermal Annealing). This cycle of steps is repeated to form a high dielectric constant film.

Film formation apparatus

A high dielectric gate insulating film having the structure that a high-nitrogen layer, a low-nitrogen layer, and a high-nitrogen layer are layered in this order from a silicon-substrate side.

Semiconductor device, process for producing the same and process for producing metal compound thin film

Growing community of inventors

Tsukuba, Japan

Tetsuji Yasuda