Sony Corporation

Sony Semiconductor Solutions Corporation

Semiconductor Energy Laboratory Co., Ltd.

Sony Group Corporation

Dow Corning Toray Company, Ltd.

Jsr Corporation

Jsr Life Sciences Corporation

Kabushiki Kaisha Toyota Jidoshokki

Kabushiki Kaisha Toyoda Jidoshokki Seisakusho

Chugai Seiyaku Kabushiki Kaisha

Dow Corning Asia Limited

Sony Semicondutor Solutions Corportion

Kabushiki Kaisha Tokyo Jidoshokki

Dow Toray Co., Ltd.

Tetsuji Yamaguchi

Fumihiko Koga

Takashi Ando

Yuko Ohgishi

Shintarou Hirata

Susumu Hiyama

Keisuke Hatano

Shunpei Yamazaki

Itaru Oshiyama

Harumi Ikeda

Toru Takayama

Takuji Matsumoto

Keiji Tatani

Taiichiro Watanabe

Shinichiro Izawa

Kengo Akimoto

Atsuo Isobe

Hideaki Togashi

Yuta Hasegawa

Atsushi Toda

Masashi Nakata

Nobuyuki Matsuzawa

Hideaki Mogi

Yoshiaki Obana

Ichiro Takemura

Yoshihiro Ando

Satoshi Keino

Hiromichi Godo

Yasushi Maruyama

Iwao Yagi

Shuji Manda

Norikazu Nakayama

Yukio Kaneda

Toyotaka Kataoka

Masami Shimokawa

Masayuki Sakakura

Gen Fujii

Masaharu Nagai

Ryosuke Nakamura

Takahiro Sugioka

Kaori Takimoto

Nobuhiro Kawai

Yutaka Matsuda

Yuji Uesugi

Hiroki Kayoiji

Kiyoshi Kato

Hiroyuki Mori

Takayuki Kato

Akira Ishikawa

Kenichi Murata

Hajime Tokunaga

Yusuke Sato

Kazuichiro Itonaga

Yasushi Tateshita

Masahiro Joei

Shunsuke Maruyama

Suguru Saito

Kiyotaka Tabuchi

Takashi Nagano

Ryosuke Matsumoto

Satoru Saito

Yutaka Nishimura

Koji Sekiguchi

Takahiro Toyoshima

Shigehiro Ikehara

Toshihiro Miura

Motoaki Mizuuchi

Takahiko Sasaki

Noriyuki Shintoku

Toshihiko Ohtomo

Hitotoshi Murase

Keiichi Nakazawa

Shinpei Fukuoka

Kazunori Nagahata

Susumu Ooki

Naoyuki Miyashita

Norihiro Kubo

Etsuko Asano

Yoshihiko Nagahama

Yoshito Nagashima

Keiji Mabuchi

Isao Hirota

Konami Izumi

Kouichi Harada

Tomoya Futamura

Masaki Murata

Toshihisa Shimo

Osamu Enoki

Hideki Adachi

Akio Saiki

Yasuharu Ujiie

Yohei Hirose

Shigeo Fukushima

Tsukasa Suzuki

Yuya Kumagai

Atsushi Ikezawa

Noriaki Baba

Provided is a solid-state imaging device that includes a first electrode, a second electrode, a photoelectric conversion layer, and a voltage applier. The first electrode includes a plurality of electrodes independent from each other. The second electrode is disposed opposite to the first electrode. The photoelectric conversion layer is disposed between the first electrode and the second electrode. The voltage applier applies different voltages to at least one of the first electrode or the second electrode during a charge accumulation period and a charge non-accumulation period.

Solid-state imaging device and method of controlling solid-state imaging device

A solid state imaging device that includes a substrate having oppositely facing first and second surfaces and a photoelectric conversion unit layer having a light incident side facing away from the substrate. The substrate includes a first photoelectric conversion unit and a second photoelectric conversion and the photoelectric conversion layer includes a third photoelectric conversion unit.

Solid-state imaging device, method of manufacturing the same, and electronic apparatus

A solid-state imaging apparatus includes a pixel array in which a plurality of pixels are two-dimensionally arranged, wherein each pixel has a first photoelectric conversion region formed above a semiconductor layer, a second photoelectric conversion region formed in the semiconductor layer, a first filter configured to transmit a light in a predetermined wavelength region corresponding to a color component, and a second filter having different transmission characteristics from the first filter. One photoelectric conversion region out of the first photoelectric conversion region and the second photoelectric conversion region photoelectrically converts light in a visible light region, the other photoelectric conversion region photoelectrically converts light in an infrared region, the first filter is formed above the first photoelectric conversion region, and the second filter has transmission characteristics of making wavelengths of lights in an infrared region absorbed in the other photoelectric conversion region formed below the first filter the same.

Solid-state imaging apparatus and electronic apparatus

A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode and a second electrode facing each other; and a photoelectric conversion layer provided between the first electrode and the second electrode, and including a first organic semiconductor material, a second organic semiconductor material, and a third organic semiconductor material that have mother skeletons different from one another. The first organic semiconductor material is one of fullerenes and fullerene derivatives. The second organic semiconductor material in a form of a single-layer film has a higher linear absorption coefficient of a maximal light absorption wavelength in a visible light region than a single-layer film of the first organic semiconductor material and a single-layer film of the third organic semiconductor material. The third organic semiconductor material has a value equal to or higher than a HOMO level of the second organic semiconductor material.

Photoelectric conversion element and solid-state imaging device

A first light receiving element according to an embodiment of the present disclosure includes a plurality of pixels, a photoelectric converter that is provided as a layer common to the plurality of pixels, and contains a compound semiconductor material, and a first electrode layer that is provided between the plurality of pixels on light incident surface side of the photoelectric converter, and has a light-shielding property.

Light receiving element and electronic apparatus

A highly functional photoelectric conversion element is provided. The photoelectric conversion element includes: a first photoelectric converter that detects light in a first wavelength range and photoelectrically converts the light; a second photoelectric converter that detects light in a second wavelength range and photoelectrically converts the light to obtain distance information of a subject; and an optical filter that is disposed between the first photoelectric converter and the second photoelectric converter, and allows the light in the second wavelength range to pass therethrough more easily than the light in the first wavelength range. The first photoelectric converter includes a stacked structure and an electric charge accumulation electrode. The stacked structure includes a first electrode, a first photoelectric conversion layer, and a second electrode that are stacked in order, and the electric charge accumulation electrode is disposed to be separated from the first electrode and be opposed to the first photoelectric conversion layer with an insulating layer interposed therebetween.

Photoelectric conversion element, photodetector, photodetection system, electronic apparatus, and mobile body

A solid-state image pickup unit includes: a substrate made of a first semiconductor; a substrate made of a first semiconductor; a photoelectric conversion device provided on the substrate and including a first electrode, a photoelectric conversion layer, and a second electrode in order from the substrate; and a plurality of field-effect transistors configured to perform signal reading from the photoelectric conversion device. The plurality of transistors include a transfer transistor and an amplification transistor, the transfer transistor includes an active layer containing a second semiconductor with a larger band gap than that of the first semiconductor, and one terminal of a source and a drain of the transfer transistor also serves the first electrode or the second electrode of the photoelectric conversion device, and the other terminal of the transfer transistor is connected to a gate of the amplification transistor.

Solid-state image pickup unit and electronic apparatus

An image processor according to the present disclosure includes: an image segmentation processing section to generate a plurality of first map data on the basis of first image map data including a plurality of pixel values, the plurality of first map data having arrangement patterns of pixel values different from each other and including pixel values located at positions different from each other; an interpolation processing section to generate a plurality of second map data by determining a pixel value at a position where no pixel value is present in each of the plurality of first map data with use of interpolation processing; and a synthesis processing section to generate third map data by generating, on the basis of pixel values at positions corresponding to each other in the plurality of second map data, a pixel value at a position corresponding to the positions.

Image processor, image processing method, and imaging device

The present disclosure relates to a solid-state imaging device, a method for driving the solid-state imaging device, and an electronic device capable of improving auto-focusing accuracy by using a phase difference signal obtained by using a photoelectric conversion film. The solid-state imaging device includes a pixel including a photoelectric conversion portion having a structure where a photoelectric conversion film is interposed by an upper electrode on the photoelectric conversion film and a lower electrode under the photoelectric conversion film. The upper electrode is divided into a first upper electrode and a second upper electrode. The present disclosure can be applied to, for example, a solid-state imaging device or the like.

Solid-state imaging device, method for driving the same, and electronic device for improved auto-focusing accuracy

Inhibition of movement of charges in a semiconductor element formed by growing a group III-V compound semiconductor layer on a silicon substrate is prevented. The semiconductor element includes a silicon substrate, a first compound semiconductor layer, a second compound semiconductor layer, and an electrode. The first compound semiconductor layer is formed on the silicon substrate. The second compound semiconductor layer is stacked on the first compound semiconductor layer. The electrode is disposed on the silicon substrate and controls movement of charges between the silicon substrate and the second compound semiconductor layer via the first compound semiconductor layer.

Semiconductor element and semiconductor device

The present technology relates to an imaging element and an electronic apparatus which make it possible to acquire a variety of information regarding a subject including polarization information. Included are an organic photoelectric conversion film that has a light-transmitting property, is oriented in a predetermined axial direction, and includes a step; an upper electrode arranged on a light incident surface side of the organic photoelectric conversion film; and a lower electrode arranged on a side of the organic photoelectric conversion film facing the upper electrode. Protrusions and recesses are formed on the light incident surface side of the organic photoelectric conversion film. An accumulation layer that accumulates an electric charge converted by the organic photoelectric conversion film is included between the organic photoelectric conversion film and the lower electrode, and the step is formed depending on the presence or absence of the accumulation layer. The present technology can be applied, for example, to an imaging element that detects a polarization component in a predetermined direction.

Imaging element and electronic apparatus including a stepped structure

An imaging device is provided. The imaging device may include a substrate having a first photoelectric conversion unit and a second photoelectric conversion unit at a light-incident side of the substrate. The second photoelectric conversion unit may include a photoelectric conversion layer, a first electrode, a second electrode above the photoelectric conversion layer, a third electrode, and an insulating material between the third electrode and the photoelectric conversion layer, wherein a portion of the insulating material is between the first electrode and the third electrode.

Imaging device having charge storage electrode, first electrode, second electrode and transfer control electrode, driving method for imaging device having the same, and electronic apparatus

A solid-state imaging apparatus includes a pixel array part in which a plurality of pixels are two-dimensionally arranged, in which each pixel has a first photoelectric conversion region formed above a semiconductor layer, a second photoelectric conversion region formed in the semiconductor layer, a first filter configured to transmit a light in a predetermined wavelength region corresponding to a color component, and a second filter having different transmission characteristics from the first filter, one photoelectric conversion region out of the first photoelectric conversion region and the second photoelectric conversion region photoelectrically converts a light in a visible light region, the other photoelectric conversion region photoelectrically converts a light in an infrared region, the first filter is formed above the first photoelectric conversion region, and the second filter has transmission characteristics of making wavelengths of lights in an infrared region absorbed in the other photoelectric conversion region formed below the first filter the same.

There is provided a solid-state image pickup device that includes a functional region provided with an organic film, and a guard ring surrounding the functional region.

Solid-state image pickup device and manufacturing method thereof

The present technique relates to a solid-state imaging device and an imaging apparatus that enable provision of a solid-state imaging device having superior color separation and high sensitivity. The solid-state imaging device includes a semiconductor layer in which a surface side becomes a circuit formation surface, photoelectric conversion units PDand PDof two layers or more that are stacked and formed in the semiconductor layer, and a longitudinal transistor Trin which a gate electrode is formed to be embedded in the semiconductor layer from a surface of the semiconductor layer. The photoelectric conversion unit PDof one layer in the photoelectric conversion units of the two layers or more is formed over a portion of the gate electrode of the longitudinal transistor Trembedded in the semiconductor substrate and is connected to a channel formed by the longitudinal transistor Tr

Solid-state imaging device and imaging apparatus

Growing community of inventors

Kanagawa, Japan

Tetsuji Yamaguchi