Hokuriku Electric Industry Co., Ltd.

Mitsubishi Electric Corporation

Tetsuji Imamura

Takayuki Nakano

Daisuke Kuwahara

Tomokazu Ogomi

Kenji Shimohata

Jin Inoue

Masahide Tamura

Yoshinori Yamaguchi

Hidekazu Yano

Takahiro Ishibashi

Osamu Kawasaki

Shouhei Niikawa

Takashi Daimon

The magnetoresistive effect element unit includes an anisotropic magnetoresistive effect element and a conductive reset line that, as viewed in a direction orthogonal to both a magnetic sensing direction x' and an easy magnetization direction y&#x2032; of the anisotropic magnetoresistive effect element, passes through a center of the anisotropic magnetoresistive effect element, extends in a direction inclined from the easy magnetization direction y&#x2032; so as to form an angle of 45&#xb0; or less with the easy magnetization direction y&#x2032;, and is parallel to a plane including the magnetic sensing direction x&#x2032; and the easy magnetization direction y&#x2032;. As viewed in the direction orthogonal to both the magnetic sensing direction x&#x2032; and the easy magnetization direction y&#x2032;, the reset line has a width that covers an entirety of the anisotropic magnetoresistive effect element.

Magnetoresistive effect element unit and magnetoresistive effect element device

Provided herein is a vibration-type angular velocity sensor capable of improving detection precision of angular velocities around the Z axis and preventing detection precision of angular velocities around the X and Y axes from deteriorating. A weightis columnar or conic. The outline of an outer peripheral portion of a diaphragmhas such shape that a straight portion ST is formed at each of four corner portions of a square. Four vibration exciting electrodesare respectively located in four regions partitioned by a first imaginary line Land a second imaginary line L. Four angular velocity sensing electrodesare respectively located in four regions partitioned by a first imaginary diagonal line CLand a second imaginary diagonal line Cl

Angular velocity sensor

Provided herein are a gas sensor element in which deformation of a sensitive portion due to stress may be reduced and a method of manufacturing the gas sensor element. A base insulating layerincluding a heater wiring patternis formed on a front surfaceA of a support. The base insulating layerincludes a fixed portionfixed to the front surfaceA of the support, and a nonfixed portionlocated over an opening portion. A cavity portionhaving the opening portionis formed in the support. An electrode wiring patternand a sensitive filmare formed over a central portionof the nonfixed portionof the base insulating layer. The nonfixed portionincludes the central portionand a plurality of connecting portionsconnecting the central portionand the fixed portion. Four connecting portionseach include a base portionand an extended portion. The base portionof each connecting portionis formed to extend along an edge portionA of the opening portion. Each extended portionis formed to extend from the base portionto the central portionto be connected to the central portion. The connecting portionsare formed such that the maximum width Wof each base portionis larger than the maximum width Wof each extended portions

Gas sensor element and manufacturing method of the same

Provided is a manufacturing method of a metal oxide semiconductor material for gas sensors by which an oxide precursor and noble metal colloid particles will not readily cohere in the manufacturing process. The manufacturing process implements a precursor solution synthesis stepof synthesizing an oxide precursor solution in which an oxide precursor is dispersed, a pH adjustment stepof adjusting the pH of the oxide precursor solution, a precursor-colloid dispersion preparation stepof preparing an oxide precursor-noble metal colloid dispersion in which the oxide precursor and the noble metal colloid are dispersed substantially uniformly, a purifying stepof purifying the oxide precursor-noble metal colloid dispersion to obtain a purified oxide precursor noble metal colloid dispersion, and a freeze-drying stepof freeze-drying an precipitate of the purified oxide precursor-noble metal colloid dispersion.

Manufacturing method of metal oxide semiconductor material for gas sensor

Growing community of inventors

Toyama, Japan

Tetsuji Imamura