Kabushiki Kaisha Toshiba

Tetsuji Hori

Gentaro Ookura

Takayuki Yoshihira

Yuuji Hiyama

Izuru Komatsu

Masahiro Tadauchi

Cao Minh Thai

Hiroshi Tateishi

Kouichi Teshima

Kazutaka Matsumoto

Koichi Teshima

A semiconductor device, comprising a frame including a die pad and a lead portion; a semiconductor element; a wire including one end connected to the semiconductor element and another end connected to the lead portion; at least one first bonding portion formed of a solder material and bonding a part of an upper surface of the die pad to a part which is on a lower surface of the semiconductor element and which is opposed to the part of the upper surface of the die pad; and at least one second bonding portion formed of a thermosetting resin and bonding another part of the upper surface of the die pad to another part which is on the lower surface of the semiconductor element and which is opposed to said another part of the upper surface of the die pad.

Mounting material, semiconductor device and method of manufacturing semiconductor device

Disclosed is a high-temperature solder material which is composed of tin, zinc and silver, or of 0.01 to 2 wt % germanium or aluminum and the balance tin, or tin and zinc at a ratio of 80/20 to 70/30. The tin/zinc/silver solder has a composition ratio that the ratio of till to zinc is within a range of 97/3 to 79/21 by weight, and the ratio of the sum of tin and zinc to silver is within a range of 88/12 to 50/50 by weight, or that the ratio of tin to zinc is within a range of 70/30 to 5/95 by weight, and the ratio of silver to the sum of tin, zinc and silver is 15% by weight or less. The solder material is used for producing electric or electronic devices and equipments.

Solder material, device using the same and manufacturing process thereof

Semiconductor device

A semiconductor package includes a semiconductor chip. The semiconductor chip includes first and second electrodes disposed on a top side, and a third electrode disposed on a bottom side. A heat spreader is bonded to the third electrode. First and second conductive leads are electrically connected to the first and second electrodes through first and second conductive bonding members, respectively. The first and second leads respectively include foot portions at their lower ends, which are juxtaposed on a first side of the heat spreader. The heat spreader and the foot portions of the first and second leads have bottom faces, which are exposed on the bottom of an insulating sealing body, and are disposed on the same plane.

Semiconductor package and manufacturing method thereof

Disclosed is a semiconductor device provided with a heat-sink. The semiconductor device comprises a laminated insulating film formed on the heat-sink, a lead-frame mounted on the laminated insulating film, a semiconductor chip mounted to the lead-frame, and a molding resin for molding the semiconductor chip. The laminated insulating film comprises a first insulating resin layer formed on the side of the heat-sink and a second insulating resin layer formed on the side of the lead-frame. The first insulating resin layer is made of an epoxy resin containing 80 wt % of a heat dissipating filler. Also, the second insulating resin layer is made of an epoxy resin containing 70 wt % of a heat dissipating filler.

Semiconductor device provided with heat-sink and method of manufacturing the same

Growing community of inventors

Yokohama, Japan

Tetsuji Hori