Hamamatsu-Photonics K.k.

Tetsuhisa Nakano

Kenichi Ohtsuka

Motoyuki Watanabe

A film thickness measurement deviceA includes a light emission unitfor emitting light onto a measurement object, a light detection unitA for detecting the wavelength-dependent intensity of reflected light, and a film thickness calculation unitA for determining the film thickness of a first filmby comparing measured spectral reflectance obtained based on the detection result in the light detection unitA with theoretical spectral reflectance that takes into account front surface reflectance, front surface transmissivity, and back surface reflectance. The film thickness calculation unitA compares the measured spectral reflectance with a plurality of values of the theoretical spectral reflectance obtained by changing the front surface reflectance value, the front surface transmissivity value, and the back surface reflectance value, and determines the film thickness of the first filmbased on the theoretical spectral reflectance closest to the measured spectral reflectance.

Film thickness measurement method and film thickness measurement device

A film thickness measurement apparatus includes a measurement light source which supplies measurement light containing wavelength components over a predetermined band to a semiconductor film, a spectroscopic optical system and a photodetector which detect intensities of output light formed by superimposing reflected light components from an upper surface and a lower surface of the semiconductor film at each time point by wavelength, and a film thickness analysis section which obtains a temporal change in film thickness of the semiconductor film. The film thickness analysis section obtains a value corresponding to a peak wavelength where the intensity of interfering light generated by the reflected light from the upper surface and the reflected light from the lower surface interfering with each other is maximized or minimized or an interval of the adjacent peak wavelengths based on spectral waveforms of the output light detected at mutually different time points.

Film thickness measurement device and film thickness measurement method

A reflectivity measuring deviceincludes a measurement light sourcethat supplies irradiation light Lto a measurement object, a spectroscopic detection unitthat detects, at multi-wavelength, intensity of the irradiation light Land intensity of reflected light Lfrom the measurement object, a coefficient recording unitthat records a conversion coefficient K(&#x3bb;) for converting a detected value of each wavelength's intensity of the irradiation light Linto a value corresponding to a detected value of each wavelength's intensity of reflected light Lfrom a reference measurement object, and a reflectivity calculation unitthat calculates each wavelength's reflectivity based on the value corresponding to the each wavelength's intensity of the reflected light Lfrom the reference measurement object obtained from the detected value of the each wavelength's intensity of the irradiation light Land the conversion coefficient K(&#x3bb;).

Reflectivity measuring device, reflectivity measuring method, membrane thickness measuring device, and membrane thickness measuring method

A film thickness measurement apparatus includes a measurement light source that supplies measurement light containing a measurement light component with a first wavelength and a measurement light component with a second wavelength to a measuring object, a spectroscopic optical system that decomposes interfering light of reflected light from the upper surface and reflected light from the lower surface of the measuring object into an interfering light component with the first wavelength and an interfering light component with the second wavelength, photodetectors that detect intensities of the first and second interfering light components at each time point, and a film thickness analysis section that obtains a temporal change in film thickness of the measuring object based on a phase difference between a first phase in a temporal change in detected intensity of the first interfering light component and a second phase in a temporal change in detected intensity of the second interfering light component.

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Hamamatsu, Japan

Tetsuhisa Nakano