Semiconductor Energy Laboratory Co., Ltd.

Sharp Kabushiki Kaisha Corporation

Tetsuhiro Tanaka

Shunpei Yamazaki

Hideomi Suzawa

Yasumasa Yamane

Akihisa Shimomura

Mitsuhiro Ichijo

Sachiaki Tezuka

Yuhei Sato

Ryo Tokumaru

Toshiya Endo

Takashi Ohtsuki

Toshihiko Takeuchi

Kenichi Okazaki

Daisuke Matsubayashi

Yoshitaka Yamamoto

Yutaka Okazaki

Shinya Sasagawa

Takayuki Inoue

Seiji Yasumoto

Naoki Okuno

Ryota Tajima

Yuji Egi

Naoto Yamade

Kazuki Tanemura

Masayuki Sakakura

Satoshi Toriumi

Erika Kato

Hirokazu Watanabe

Tomoya Takeshita

Yuta Endo

Yasuhiko Takemura

Hidekazu Miyairi

Masashi Tsubuku

Hiromichi Godo

Takashi Hamochi

Tomokazu Yokoi

Yoshinori Ieda

Toshiyuki Miyamoto

Masafumi Nomura

Takahisa Ishiyama

Kiyoshi Kato

Junichi Koezuka

Yoshiaki Oikawa

Koji Dairiki

Motomu Kurata

Kazutaka Kuriki

Yoshinobu Asami

Tetsuya Kakehata

Makoto Furuno

Taiga Muraoka

Erika Takahashi

Suguru Hondo

Noriyoshi Suzuki

Kazuhiro Tsutsui

Takashi Ienaga

Shun Mashiro

Jun Koyama

Hideki Uochi

Kosei Noda

Kunihiko Suzuki

Yasuhiro Jinbo

Tomoaki Atsumi

Toshiyuki Isa

Kazuya Hanaoka

Motoki Nakashima

Naoya Sakamoto

Tamae Moriwaka

Fumito Isaka

Yuki Imoto

Ryu Komatsu

Kanta Abe

Masayuki Kimura

Yoichi Kurosawa

Miyako Morikubo

Taichi Nozawa

A miniaturized transistor is provided. A transistor with low parasitic capacitance is provided. A transistor having high frequency characteristics is provided. A transistor having a large amount of on-state current is provided. A semiconductor device including the transistor is provided. A semiconductor device with high integration is provided. A novel capacitor is provided. The capacitor includes a first conductor, a second conductor, and an insulator. The first conductor includes a region overlapping with the second conductor with the insulator provided therebetween. The first conductor includes tungsten and silicon. The insulator includes a silicon oxide film that is formed by oxidizing the first conductor.

Method for forming capacitor, semiconductor device, module, and electronic device

A transistor with favorable electrical characteristics is provided. One embodiment of the present invention is a semiconductor device including a semiconductor, a first insulator in contact with the semiconductor, a first conductor in contact with the first insulator and overlapping with the semiconductor with the first insulator positioned between the semiconductor and the first conductor, and a second conductor and a third conductor, which are in contact with the semiconductor. One or more of the first to third conductors include a region containing tungsten and one or more elements selected from silicon, carbon, germanium, tin, aluminum, and nickel.

Semiconductor device

To reduce oxygen vacancies in an oxide semiconductor film and the vicinity of the oxide semiconductor film and to improve electric characteristics of a transistor including the oxide semiconductor film. A semiconductor device includes a gate electrode whose Gibbs free energy for oxidation is higher than that of a gate insulating film. In a region where the gate electrode is in contact with the gate insulating film, oxygen moves from the gate electrode to the gate insulating film, which is caused because the gate electrode has higher Gibbs free energy for oxidation than the gate insulating film. The oxygen passes through the gate insulating film and is supplied to the oxide semiconductor film in contact with the gate insulating film, whereby oxygen vacancies in the oxide semiconductor film and the vicinity of the oxide semiconductor film can be reduced.

Semiconductor device and method for manufacturing the same

A transistor with stable electrical characteristics. A semiconductor device includes a first insulator over a substrate, a second insulator over the first insulator, an oxide semiconductor in contact with at least part of a top surface of the second insulator, a third insulator in contact with at least part of a top surface of the oxide semiconductor, a first conductor and a second conductor electrically connected to the oxide semiconductor, a fourth insulator over the third insulator, a third conductor which is over the fourth insulator and at least part of which is between the first conductor and the second conductor, and a fifth insulator over the third conductor. The first insulator contains a halogen element.

Semiconductor device and manufacturing method thereof

A semiconductor device having a reduced amount of oxygen vacancy in a channel formation region of an oxide semiconductor is provided. Further, a semiconductor device which includes an oxide semiconductor and has improved electric characteristics is provided. Furthermore, a methods for manufacturing the semiconductor device is provided. An oxide semiconductor film is formed; a conductive film is formed over the oxide semiconductor film at the same time as forming a low-resistance region between the oxide semiconductor film and the conductive film; the conductive film is processed to form a source electrode and a drain electrode; and oxygen is added to the low-resistance region between the source electrode and the drain electrode, so that a channel formation region having a higher resistance than the low-resistance region is formed and a first low-resistance region and a second low-resistance region between which the channel formation region is positioned are formed.

A manufacturing method of a semiconductor device in which the threshold is adjusted to an appropriate value is provided. The semiconductor device includes a semiconductor, a source or drain electrode electrically connected to the semiconductor, a first gate electrode and a second gate electrode between which the semiconductor is sandwiched, an electron trap layer between the first gate electrode and the semiconductor, and a gate insulating layer between the second gate electrode and the semiconductor. By keeping a potential of the first gate electrode higher than a potential of the source or drain electrode for 1 second or more while heating, electrons are trapped in the electron trap layer. Consequently, threshold is increased and Icut is reduced.

Semiconductor device and method for manufacturing semiconductor device

A miniaturized transistor with reduced parasitic capacitance and highly stable electrical characteristics is provided. High performance and high reliability of a semiconductor device including the transistor is achieved. A first conductor is formed over a substrate, a first insulator is formed over the first conductor, a layer that retains fixed charges is formed over the first insulator, a second insulator is formed over the layer that retains fixed charges, and a transistor is formed over the second insulator. Threshold voltage Vis controlled by appropriate adjustment of the thicknesses of the first insulator, the second insulator, and the layer that retains fixed charges.

To provide a semiconductor device including an oxide semiconductor layer with high and stable electrical characteristics, the semiconductor device is manufactured by forming a first insulating layer, forming oxide over the first insulating layer and then removing the oxide n times (n is a natural number), forming an oxide semiconductor layer over the first insulating layer, forming a second insulating layer over the oxide semiconductor layer, and forming a conductive layer over the second insulating layer. Alternatively, the semiconductor device is manufactured by forming the oxide semiconductor layer over the first insulating layer, forming the second insulating layer over the oxide semiconductor layer, forming the oxide over the second insulating layer and then removing the oxide n times (n is a natural number), and forming the conductive layer over the second insulating layer.

Semiconductor device, method for manufacturing semiconductor device, and electronic appliance having semiconductor device

A semiconductor device includes a semiconductor, a first conductor, a second conductor, a third conductor, a fourth conductor, a first insulator, a second insulator, a third insulator, and a fourth insulator. The first conductor and the semiconductor partly overlap with each other with the first insulator positioned therebetween. The second conductor and the third conductor have regions in contact with the semiconductor. The semiconductor has a region in contact with the second insulator. The fourth insulator has a first region and a second region. The first region is thicker than the second region. The first region has a region in contact with the second insulator. The second region has a region in contact with the third insulator. The fourth conductor and the second insulator partly overlap with each other with the fourth insulator positioned therebetween.

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Kanagawa, Japan

Tetsuhiro Tanaka