Nec Corporation

Renesas Electronics Corporation

Tetsuhiro Suzuki

Nobuyuki Ishiwata

Shunsuke Fukami

Norikazu Ohshima

Kiyokazu Nagahara

Tadahiko Sugibayashi

Sadahiko Miura

Eiji Kariyada

Katsumi Suemitsu

Kaoru Mori

Hironobu Tanigawa

Noboru Sakimura

Ryusuke Nebashi

Yoshiyuki Fukumoto

Hideaki Numata

Takuya Kitamura

Takeshi Honda

Yoshihiro Nonaka

Tamaki Toba

Haruo Urai

Hisao Matsutera

Shinsaku Saitho

Hiroaki Honjou

Hiroaki Tachibana

Kiyotaka Shimabayashi

Yasuaki Ozaki

Norikazu Oshima

Provided is a magnetic shield having improved shielding properties from an external magnetic field. A magnetic shield MShas in-plane magnetization as remanent magnetization, and is adapted to generate a perpendicular component in the magnetization direction by applying a magnetic field in the perpendicular direction to the magnetic shield.

Semiconductor package

The present invention provides a magnetoresistive effect element which performs writing by a novel method. In a state in which a current does not flow in a magnetization free layer MFR, the magnetization free layer MFR has a magnetic wall MWon the side of a magnetization fixed layer MFX. A magnetic wall MWis moved to the magnetic wall MWside by causing current to flow from the formed side of the magnetic wall MW. Thus, an electrical resistance Rbetween a reference layer REF and the magnetization free layer MFR changes from a low state to a high state.

Semiconductor device

Magnetic shield, semiconductor device, and semiconductor package

A magnetic memory includes: a base layer; a magnetization free layer; a barrier layer; and a magnetization reference layer. The magnetization free layer, with which the base layer is covered, has invertible magnetization and is magnetized approximately uniformly. The barrier layer, with which the magnetization free layer is covered, is composed of material different from material of the base layer. The magnetization reference layer is arranged on the barrier layer and has a fixed magnetization. When the magnetization of the magnetization free layer is inverted, a first writing current is made to flow from one end to the other end of the magnetization free layer in an in-plane direction without through the magnetization reference layer.

Magnetic memory using spin orbit interaction

A magnetoresistive effect element of the present invention includes: a domain wall motion layer, a spacer layer and a reference layer. The domain wall motion layer is made of ferromagnetic material with perpendicular magnetic anisotropy. The spacer layer is formed on the domain wall motion layer and made of non-magnetic material. The reference layer is formed on the spacer layer and made of ferromagnetic material, magnetization of the reference layer being fixed. The domain wall motion layer includes at least one domain wall, and stores data corresponding to a position of the domain wall. An anisotropy magnetic field of the domain wall motion layer is larger than a value in which the domain wall motion layer can hold the perpendicular magnetic anisotropy, and smaller than an essential value of an anisotropy magnetic field of the ferromagnetic material of the domain wall motion layer.

Magnetoresistive effect element and magnetic random access memory using the same

A magnetic memory element includes: a first magnetization free layer formed of a ferromagnetic material having perpendicular magnetic anisotropy; a second magnetization free layer provided near the first magnetization free layer and formed of a ferromagnetic material having in-plane magnetic anisotropy; a reference layer formed of a ferromagnetic material having in-plane magnetic anisotropy; and a non-magnetic layer provided between the second magnetization free layer and the reference layer. The first magnetization free layer includes: a first magnetization fixed region of which magnetization is fixed, a second magnetization fixed region of which magnetization is fixed, and a magnetization free region which is connected to the first magnetization fixed region and the second magnetization fixed region, and of which magnetization can be switched. The second magnetization free layer is included in the first magnetization free layer in a plane parallel to a substrate. The second magnetization free layer is provided in a first direction away from the magnetization free region in the plane.

Magnetic memory element and magnetic memory

A magnetic memory element includes: a first magnetization free layer configured to be composed of ferromagnetic material with perpendicular magnetic anisotropy; a reference layer configured to be provided near the first magnetization free layer; a non-magnetic layer configured to be provided adjacent to the reference layer; and a step formation layer configured to be provided under the first magnetization free layer. The first magnetization free layer includes: a first magnetization fixed region of which magnetization is fixed, a second magnetization fixed region of which magnetization is fixed, and a magnetization free region configured to be connected with the first magnetization fixed region and the second magnetization fixed region. The first magnetization free layer has at least one of a step, a groove and a protrusion inside.

Magnetic memory element, magnetic memory and manufacturing method of magnetic memory

A magnetic memory includes: a magnetization fixed layer having perpendicular magnetic anisotropy, a magnetization direction of the magnetization fixed layer being fixed; an interlayer dielectric; an underlayer formed on upper faces of the magnetization fixed layer and the interlayer dielectric; and a data recording layer formed on an upper face of the underlayer and having perpendicular magnetic anisotropy. The underlayer includes: a first magnetic underlayer; and a non-magnetic underlayer formed on the first magnetic underlayer. The first magnetic underlayer is formed with such a thickness that the first magnetic underlayer does not exhibit in-plane magnetic anisotropy in a portion of the first magnetic underlayer formed on the interlayer dielectric.

Magnetic memory including memory cells incorporating data recording layer with perpendicular magnetic anisotropy film

In a perpendicular magnetization domain wall motion MRAM in which the magnetizations of both ends of a magnetization free layer are pinned by magnetization pinned layers, the increase of a write current due to leakage magnetic field from the magnetization pinned layer is prevented. A first displacement is present between a first boundary line and a first vertical line, where a curve portion, which crosses a first magnetization free layer, of an outer circumferential line of a first magnetization pinned layer is the first boundary line, a segment which links a center of a magnetization free region and a center of a first magnetization pinned region is a first segment, and a segment, which is a vertical line of the first segment, and which comes in contact with the first boundary line is the first vertical line.

Magnetic memory device and magnetic memory

A magnetic memory according to the present invention has: a first underlayer; a second underlayer so formed on the first underlayer as to be in contact with the first underlayer; and a data storage layer so formed on the second underlayer as to be in contact with the second underlayer. The data storage layer is made of a ferromagnetic material having perpendicular magnetic anisotropy. A magnetization state of the data storage layer is changed by current driven domain wall motion.

Magnetic memory and method of manufacturing the same

A magnetic body device has a stacked structure comprising an underlying layer, a magnetic body layer, and a cap layer. The material for the underlying layer is different from that for the cap layer. The magnetic body layer has a free magnetization region having perpendicular magnetic anisotropy and a first characteristic change region and a second characteristic change region situated on both sides of the free magnetization region in a first in-plane direction. The perpendicular magnetic anisotropy of the first characteristic change region and the second characteristic change region is at a level lower than that of the free magnetization region. An external magnetic field containing a component in the first in-plane direction is applied to the free magnetization region. Further, a current in the first in-plane direction is supplied to the free magnetization region.

Magnetic body device and manufacturing method thereof

A magnetic memory cell includes: a magnetization recording layer; and a magnetic tunneling junction section. The magnetization recording layer includes a ferromagnetic layer with perpendicular magnetic anisotropy. The magnetic tunneling junction section is used for reading information in the magnetization recording layer. The magnetization recording layer includes two domain wall moving areas.

Magnetic memory element and magnetic random access memory

A domain wall motion type MRAM has: a magnetic recording layerbeing a ferromagnetic layer having perpendicular magnetic anisotropy; a pair of current supply terminalsandconnected to the magnetic recording layerfor supplying a current to the magnetic recording layerand an anti-ferromagnetic layerbeing in contact with a first region Rof the magnetic recording layer. The first region Rincludes a part of a current supply region RA of the magnetic recording layerthat is between the pair of current supply terminalsand

Magnetic random access memory and initializing method for the same

A magnetic memory element includes: a first magnetization free layer; a non-magnetic layer; a reference layer; a first magnetization fixed layer group; and a first blocking layer. The first magnetization free layer is composed of ferromagnetic material with perpendicular magnetic anisotropy and includes a first magnetization fixed region, a second magnetization fixed region and a magnetization free region. The non-magnetic layer is provided near the first magnetization free layer. The reference layer is composed of ferromagnetic material and provided on the non-magnetic layer. The first magnetization fixed layer group is provided near the first magnetization fixed region. The first blocking layer is provided being sandwiched between the first magnetization fixed layer group and the first magnetization fixed region or in the first magnetization fixed layer group.

Growing community of inventors

Tokyo, Japan

Tetsuhiro Suzuki