Matsushita Electric Industrial Co., Ltd.

Panasonic Intellectual Property Management Co., Ltd.

Panasonic Corporation

Other

Krosakiharima Corporation

Tetsuhiro Iwai

Kiyoshi Arita

Hiroshi Haji

Shoji Sakemi

Atsushi Harikai

Motoko Hara

Shogo Okita

Akira Nakagawa

Mitsuru Hiroshima

Syouzou Watanabe

Kazuhiro Noda

Yutaka Koma

Ryota Furukawa

Taiji Matano

Nobuhiro Nishizaki

Junichi Terayama

Nobuhiro Satou

Disclosed is a plasma processing device that provides an object to be treated with plasma treatment. A wafer as an object to be treated, which is attached on the upper surface of adhesive sheet held by a holder frame, is mounted on a stage. In a vacuum chamber that covers the stage therein, plasma is generated, by which the wafer mounted on the stage undergoes plasma treatment. The plasma processing device contains a cover member made of dielectric material. During the plasma treatment on the wafer, the holder frame is covered with a cover member placed at a predetermined position above the stage, at the same time, the wafer is exposed from an opening formed in the center of the cover member.

Plasma processing apparatus

A plasma processing apparatus comprises a base including an electrode body having a seat surface for setting a substrate held on a conveying carrier, and a platform for supporting the electrode body, and a lid configured to be moved up and down relative to the base, wherein the lid is moved down and appressed on the platform to define a closed space and a plasma is generated within the closed space to implement a plasma processing for the substrate set on the seat surface. The substrate is held on the holding sheet and set on the seat surface with the holding sheet therebetween. The plasma processing apparatus further comprises a guide being provided along a circumference of the electrode body for alignment of the frame, and a cover provided with the lid for covering at least the frame of the conveying carrier when the closed space is defined.

Plasma processing apparatus and plasma processing method

A plasma processing apparatus includes: a base that has an electrode body provided with a placing surface on which a substrate is placed and a pedestal which supports the electrode body; a lid that is liftable and lowerable with respect to the base and forms a sealed space for performing plasma processing on the substrate placed on the placing surface by being lowered to come into close contact with the pedestal; a cover that is provided integrally with the lid and covers at least a part of an outer edge of the substrate placed on the placing surface when the sealed space is formed; and a guide that is disposed around the electrode body.

Plasma processing method

A plasma processing apparatus performs plasma processing on a substrate held by a carrier. The carrier includes a frame disposed around the substrate and a holding sheet which holds the substrate and the frame. The plasma processing apparatus includes: a chamber; a stage which is disposed within the chamber and has an upper surface on which the carrier is mounted; a gas hole which is provided at a position of the upper surface opposing a bottom surface of the frame and through which cooling gas is supplied between the stage and the carrier; and a plasma exciting unit which generates plasma within the chamber.

Plasma processing apparatus and method for manufacturing electronic component

The plasma processing apparatus is provided with a chamber, a plasma sourcewhich generates plasma inside the chamber, a stagewhich is provided inside the chamberand places a carrierthereon, a coverwhich is arranged above the stageto cover a holding sheetand a frameand has a windowwhich is formed on a central part thereof to penetrate the coverin the thickness direction, and a drive mechanismwhich changes the position of the coverrelative to the stagebetween a first position which is away from the stageand allows the carrierto be placed on and removed from the stageand a second position which allows the coverto cover the holding sheetand the frameof the carrierplaced on the stageand a substrateheld on the holding sheetto be exposed through the window. The windowof the coverallows an area of the substrate, the area being located on the inner side with respect to an outer edge area of the substrate, to be exposed therefrom.

The present invention is to achieve a reduction both in size of a plasma processing apparatus and an installation area thereof. A dry etching apparatus includes a stock unit that includes a cassette storing a tray that can be conveyed and that stores substrates. In a conveying unit storing a conveying apparatus of the tray, a rotary stage is provided. Rotational angular position adjustment of the tray is performed by rotating the rotary stage placed on the tray before being subjected to dry etching and detecting a notch by a notch detecting sensor.

A plasma dicing apparatus in which a semiconductor wafer with a protective sheet stuck thereonto covering the entire circuit-forming surface and with an etching-resistant mask member stuck on the back surface opposite to the circuit-forming surface is mounted on a mounting stage; plasma etching is performed using the mask member as a mask; and the semiconductor wafer is diced into plural semiconductor chips. The plasma dicing apparatus includes a ring-shaped frame member retaining the outer circumference of the mask member extending off the outer circumference of the semiconductor wafer. The mounting stage is composed of a wafer supporting part supporting a semiconductor wafer and a frame member supporting part supporting the frame member. This facilitates carrying a semiconductor wafer into and out of the vacuum chamber.

Plasma dicing apparatus and method of manufacturing semiconductor chips

For a plasma processing apparatus that performs an etching process for the face of a wafer opposite the circuit formation face, ceramic insulating films having a ring shape are positioned on the mounting face of an electrode member in consonance with the location of a large wafer or a small wafer. When a large wafer is employed, a ring member is attached. And when a small wafer is employed, a blocking member is mounted to hide a gap between the insulating films deposited on the mounting faceand to cover suction holes. Further, a cover member is attached to cover the blocking member from the top. With this arrangement, the plasma process can be performed, using the same electrode member, for wafers having different sizes.

In a plasma treating apparatus, a ceramic porous substance having a three-dimensional network structure in which a frame portion formed of ceramic containing alumina is provided continuously like a three-dimensional network is used for the material of an electrode member for the plasma treating apparatus to be attached to the front surface of a gas supplying port of an electrode for plasma generation, and a gas for plasma generation is caused to pass through a hole portion formed irregularly in the three-dimensional network structure. Consequently, the distribution of the gas to be supplied is made uniform to prevent an abnormal discharge so that uniform etching having no variation can be carried out.

Electrode member used in a plasma treating apparatus

In a plasma treating apparatus, a ceramic porous substance having a three-dimensional network structure in which a frame portionformed of ceramic containing alumina is provided continuously like a three-dimensional network is used for the material of an electrode memberfor the plasma treating apparatus to be attached to the front surface of a gas supplying port of an electrode for plasma generation, and a gas for plasma generation is caused to pass through a hole portionformed irregularly in the three-dimensional network structure. Consequently, the distribution of the gas to be supplied is made uniform to prevent an abnormal discharge so that uniform etching having no variation can be carried out.

Plasma treating apparatus, plasma treating method and method of manufacturing semiconductor device

In a plasma processing apparatus for plasma-processing a silicon waferto which a protective filmis stuck in a state that the silicon waferis held by a first electrodeby electrostatic absorption and is being cooled, the top surfaceof the first electrodeconsists of a top surface central area A that is inside a boundary line Pthat is distant inward by a prescribed length from the outer periphery Pof the silicon waferand in which the conductor is exposed, and a ring-shaped top surface peripheral area B that surrounds the top surface central area A and in which the conductor is covered with an insulating coatingThis structure makes it possible to hold the silicon waferby sufficient electrostatic holding force by bringing the silicon waferinto direct contact with the conductor and to increase the cooling efficiency by virtue of heat conduction from the silicon waferto the first electrode

Growing community of inventors

Kasuga, Japan

Tetsuhiro Iwai