Mitsubishi Electric Corporation

Mitsubishi Denki Kabushiki Kaisha

Tetsuhiro Fukao

Yohei Mikami

Shigenori Sakamori

Harufusa Kondo

Yoshihiro Kusumi

Masafumi Takeda

Koichi Nakamura

Junko Matsumoto

Nobuo Fujiwara

Tatsuo Hatta

Satoshi Iida

Satoshi Kajiya

Nobuaki Yamanaka

Nobuyuki Yasui

Kazuyuki Ohmi

Motoyoshi Koyanagi

Hiroshi Miyatake

Akemi Teratani

Kenichi Uto

Kanji Tabaru

Mutsumi Nakamaru

Kazuya Itose

Provided here are: a measuring probe that is to be connected to a terminal pad of a measurement object; a measuring probe that is to be connected to a terminal pad of the measurement object, said terminal pad being electrically conductive with the terminal pad of the measurement object; and a signal source that is connected to both the measuring probe and the measuring probe and that can write or read a signal in or from the measurement object through each of the measuring probe and the measuring probe. Accordingly, it is possible to apply a signal from the signal source to the measurement object even if foreign substances are deposited on one of the measuring probes, without widely setting the measurement area for the measurement object. This reduces the problem of defective contact.

Inspection device

A semiconductor laser device () is placed on a first heating-cooling device (). A probe holder () is attached on a second heating-cooling device (). A measurement probe () is fixed to a distal end of the probe holder (). A fine movement table () moves the second heating-cooling device () and the probe holder () so that a distal end of the measurement probe () contacts the semiconductor laser device (). An inspection apparatus () inputs an inspection signal to the semiconductor laser device () through the measurement probe ().

Semiconductor laser inspection apparatus

A semiconductor laser device () is placed on a first heating-cooling device (). A probe holder () is attached on a second heating-cooling device (), A measurement probe () is fixed to a distal end of the probe holder (). A fine movement table () moves the second heating-cooling device () and the probe holder () so that a distal end of the measurement probe () contacts the semiconductor laser device (). An inspection apparatus () inputs an inspection signal to the semiconductor laser device () through the measurement probe ().

An electronic device inspection apparatus of the present application comprises an inspection table for positioning and holding an electrode disposed on a semiconductor device, a contact element that is formed of a shape memory alloy in a long and thin plate shape and has a base part fixed to the inspection table and a variable part formed in a shape of a spiral at a first temperature and being developed from the spiral at a second temperature; and a measurement circuitry for measuring the semiconductor device by conducting a current to flow into the electrode via the contact element. The axis of the spiral of the variable part is parallel to the electrode face of the positioned electrode and a contact region is formed along a longitudinal direction between the variable part and the positioned electrode at the second temperature.

Electronic device inspection apparatus

An optical module includes: a pedestal; a glass optical multiplexer/demultiplexer fixed onto the pedestal via a UV adhesive; and a metal block which is smaller than the glass optical multiplexer/demultiplexer and is fixed to a top surface of the glass optical multiplexer/demultiplexer.

Optical module and method of manufacturing the same

A laser module includes a light source device having a first amplifier that outputs first output light, and a second amplifier that outputs second output light, a first drive circuit that supplies the first amplifier with a first drive current, a second drive circuit that supplies the second amplifier with a second drive current. A dither signal is superimposed on one of two drive currents to respectively grasp the characteristics of the two amplifiers.

Dual wavelength laser module with constant output intensity

An optical transceiver includes an optical transmitter. The optical transmitter varies the wavelength of its output beam in accordance with the setting of a digital to analog converter. Two split beams emerging respectively from beam splitters are introduced into a photodetector and a wavelength filter, respectively. A quotient is calculated by dividing the digital value output from an analog to digital converter (ADC) by the digital value output from another ADC. A memory address m is then determined based on this quotient without making any calculation for compensating for the imperfect characteristics of the wavelength filter. A wavelength notification value is then selected from a wavelength notification table based on the determined memory address m, and sent to the system host.

Optical transmission device

A control circuit for an optical transmitter/receiver that transmits/receives an optical signal, comprises: a memory having a digital value storage area and an area that stores limit values; a register; an analog/digital conversion circuit that receives analog signals indicating operating parameters of the optical transmitter/receiver, converts the analog signals to respective digital values, and stores the digital values in the memory; a comparison logical circuit that compares the digital values with the limit values, generates flag values, and stores the flag values in the register; and an outside interface that allows an outside host apparatus to access the memory and the register to read the flag values and monitor an operating condition of the optical transmitter/receiver from outside.

Control circuit for optical transmitter/receiver

There is described formation of a contact hole without involvement of damage to an etching stopper film and deterioration of electric characteristics, achieved by means of a self-alignment method. An interlayer oxide film is etched through an opening of a resist mask, and by means of plasma etching through use of a processing gas comprising a mixture of a rare gas and a CF-based gas, thereby tapering a shoulder of the silicon nitride film. Alternatively, a silicon oxide film and a silicon nitride film are continually etched through an opening of the resist mask, by means of plasma etching through use of a CH F gas added to a mixed gas including a rare gas and a C F gas.

Semiconductor device having an improved contact structure and a manufacturing method thereof

Provided are a method for manufacturing contact structure to prevent, in the wire of a borderless structure, erosion in the contact area between the wire and a conductor. An interlayer insulating film (300) having a wire burying hole is formed and a conductor (400) is buried in the hole. Then, a wire layer (500) covering the hole is formed on the interlayer insulating film (300). The wire layer (500) is made so as to have a borderless structure by using a resist (540) as a mask. A barrier metal layer (510) suppresses erosion in the contact area between the conductor (400) and the wire layer (500).

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Tokyo, Japan

Tetsuhiro Fukao