Kabushiki Kaisha Toshiba

Renesas Electronics Corporation

Toshiba Energy Systems & Solutions Corporation

Renesas Technology Corp.

Tetsuharu Tanoue

Fumiyuki Yamane

Takashi Akiba

Shin Kato

Hirofumi Morita

Ryota Kitagawa

Hideaki Sato

Yoshitsune Sugano

Norihiro Yoshinaga

Hiroshi Katayama

Yukitaka Monden

Masahiko Murai

Shingo Tamaru

Yoshihiro Shoji

Urara Watanabe

Yoji Nakamori

Naoki Syoji

Gaku Nakamura

Shinichi Sekiguchi

Yoshitaka Nihira

Yoshie Takabayashi

Masayuki Ono

An electrochemical reaction device of an embodiment includes: an electrochemical reaction cellthat includes: a first electrode having a first flow path, a second electrode having a second flow path, and a separating membrane sandwiched between the first electrode and the second electrode; a liquid tank that contains a liquid to be treated supplied to the second flow path of the second electrode; a first pipe that connects an inlet of the second flow path and the liquid tank; a second pipe that connects an outlet of the second flow path and the liquid tank; and a backflow suppression mechanism that is provided in the second pipe to prevent backflow of the liquid to be treated flowing in the second pipe or reduce a backflow speed.

Electrochemical reaction device and electrochemical reaction method

A hydrogen-energy control system according to the present embodiment includes a hydrogen energy system, a power grid control system, a hydrogen transport system, and a hydrogen-energy integrated management system configured to control the hydrogen energy system based on information on communication with the power grid control system, wherein the hydrogen-energy integrated management system includes a first communication portion configured to perform communication of at least data of a charge request in charge and discharge requests with the power grid control system, a second communication portion configured to perform communication of hydrogen demand data with the hydrogen transport system, a target hydrogen-amount acquisition portion configured to acquire a target hydrogen-production amount based on the hydrogen demand data, and an operation planning portion configured to create an operation plan in the hydrogen energy system based on the target hydrogen-production amount and the data of the charge request.

Hydrogen-energy control system and control method for hydrogen-energy control system

A controller according to an embodiment controls a hydrogen system including at least a hydrogen production system in which received power is planned in advance and a hydrogen production amount changes in accordance with the received power. The controller includes: a processor that calculates, in a preparation time period before a demand adjustment time period in which a target value of the received power is set in advance, a control command value such that input power to be inputted as the received power to the hydrogen production system matches the target value at a start of the demand adjustment time period; and a command controller that outputs the control command value calculated by the processor to the hydrogen production system.

Controller, controlling method, and record medium

A power supply system according to the present embodiment is a control apparatus for a power supply system that includes a hydrogen power generator adapted to generate hydrogen using electric power supplied from a power generator and supply a load with electric power generated using the generated hydrogen, and a storage battery configured to be quicker in control response than the hydrogen power generator and adapted to get charged and discharged to offset excess and deficiency of the electric power supplied to the load from the power generator, the control apparatus including: an acquiring unit adapted to acquire information about remaining energy in the storage battery; and a controller adapted to control the hydrogen power generator so as to start generating electric power when it is expected, based on the information, that the remaining energy in the storage battery reaches a first threshold within a predetermined time.

Apparatus for power supply system, control method for power supply system, and power supply system

A detection apparatus includes: a plurality of accelerometers configured to be installed on respective positions of the architectural structure which are different in height from each other and separately measure an acceleration value generated in the architectural structure; and a computer configured to perform computation by using acceleration values measured by the plurality of accelerometers and detect collision of a flying object (airplane) against the architectural structure when a ratio between the acceleration values measured by the plurality of accelerometers exceeds a first threshold value.

Detection method for collision of a flying object against an architectural structure, detection apparatus for collision of a flying object against an architectural structure, and facility for closing an opening of an architectural structure

A seismic isolation apparatus is provided between a structure and a foundation floor, and the seismic isolation apparatus includes: a support plate that is provided so as to face the structure at a predetermined interval; a base plate that is fixed to the foundation floor; and an elasto-plastic damper that is provided between the support plate and the base plate to be fixed to the support plate and the base plate. The elasto-plastic damper includes an inner cylinder inside which an elasto-plastic member is provided and an outer cylinder, and the inner cylinder and the outer cylinder are configured to mutually slide in an axis direction thereof.

Seismic isolation device and seismic isolation method

Performing electrolysis plating to a wiring is made possible, aiming at the increasing of pin count of a semiconductor device. Package substrateby which ring shape common wiringfor electric supply was formed in the inner area of bonding leadin device regionof main surfaceis used. Since a plurality of first plating linesand fourth plating linesfor electric supply connected to common wiringcan be arranged by this, the feeder for electrolysis plating can be arranged to all the land parts on the back. Hereby, it becomes possible to perform electrolysis plating to the wiring of main surfaceof package substrate, and the back surface.

Manufacturing method of semiconductor device

Performing electrolysis plating to a wiring is made possible, aiming at the increasing of pin count of a semiconductor device. Package substrateby which ring shape common wiringfor electric supply was formed in the inner area of bonding leadin device regionof main surfaceis used. Since a plurality of first plating linesand fourth plating linesfor electric supply connected to common wiringcan be arranged by this, the feeder for electrolysis plating can be arranged to all the land parts on the back. Hereby, it becomes possible to perform electrolysis plating to the wiring of main surfaceof package substrate, and the back surface. Even if the land part of plural lines is formed covering the perimeter of the back surface, electrolysis plating can be performed to the all land parts. As a result, electrolysis plating can be performed to a wiring, aiming at the increasing of pin count of a semiconductor device.

Plural via portions formed on a package substrate of a BGA include a first through-hole portion extended in the plane direction by an extension wiring connected to a land portion and a second through-hole portion that is arranged on the land portion serving as pad-on-via, whereby high-density wiring and multi-function of the BGA can be realized by using the package substrate having a two-layer wiring structure. Accordingly, cost for the package substrate can be reduced, and hence, cost for the BGA can be reduced, compared to a multi-layer wiring structure having four or six wiring layers.

Semiconductor device

Performing electrolysis plating to a wiring is made possible, aiming at the increasing of pin count of a semiconductor device. Package substrateby which ring shape common wiringp for electric supply was formed in the inner area of bonding leadj in device regionv of main surfacea is used. Since a plurality of first plating linesr and fourth plating linesu for electric supply connected to common wiringp can be arranged by this, the feeder for electrolysis plating can be arranged to all the land parts on the back. Hereby, it becomes possible to perform electrolysis plating to the wiring of main surfacea of package substrate, and the back surface. Even if the land part of plural lines is formed covering the perimeter of the back surface, electrolysis plating can be performed to the all land parts. As a result, electrolysis plating can be performed to a wiring, aiming at the increasing of pin count of a semiconductor device.

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Tokyo, Japan

Tetsuharu Tanoue