Kokusai Electric Corporation

Hitachi-kokusai Electric Inc.

Kokusai Electric Co., Ltd.

Tetsuaki Inada

Naofumi Ohashi

Takeshi Yasui

Satoshi Takano

Takayuki Sato

Hideharu Itatani

Yasuhiro Inokuchi

Shun Matsui

Sadayoshi Horii

Daisuke Hara

Hideto Tateno

Yoshihiko Yanagisawa

Takuya Joda

Yuichi Wada

Motonari Takebayashi

Fumihide Ikeda

Masaki Murobayashi

Mitsuhiro Hirano

Mitsunori Ishisaka

Hisashi Nomura

Junichi Machida

Kazuhiro Shimeno

Masayuki Tomita

According to one aspect of the technique of the present disclosure, there is provided a substrate processing apparatus including: a process vessel constituting a process chamber; a first gas supplier provided with a first supply port through which a first process gas is supplied; a second gas supplier provided with a second supply port through which a second process gas is supplied; a plasma generator provided along an outer circumference of the process vessel and configured to be capable of plasma-exciting the first process gas supplied into the process chamber; and a substrate mounting table on which a substrate is placed. The second supply port is provided at a supply pipe extending downward from a position in a ceiling surface of the process chamber located closer to a radial center of the process vessel than the first supply port, and is provided below the first supply port.

Substrate processing apparatus, method of manufacturing semiconductor device and non-transitory computer-readable recording medium

There is included a process container; a gas supply system; and a coil provided with a section between a first grounding point and a second grounding point of the coil so as to be spirally wound a plurality of times along an outer periphery of the process container, wherein the coil is configured so that a coil separation distance, which is a distance from an inner periphery of the coil to an inner periphery of the process container, in a partial section of a first winding section, which is a section where the coil winds once along the outer periphery of the process container in a direction from the first grounding point toward the second grounding point, is longer than a coil separation distance in another partial section of the first winding section continuous with the partial section of the first winding section.

Substrate processing apparatus, method of manufacturing semiconductor device, and recording medium

Described herein is a technique capable of suppressing generation of particles by removing by-products in a groove of a high aspect ratio. According to one aspect of the technique, there is provided a substrate processing apparatus including: a process chamber in which a substrate is processed; and a substrate support provided in the process chamber and including a plurality of supports where the substrate is placed, wherein the process chamber includes a process region where a process gas is supplied to the substrate and a purge region where the process gas above the substrate is purged, and the purge region includes a first pressure purge region to be purged at a first pressure and a second pressure purge region to be purged at a second pressure higher than the first pressure.

Substrate processing apparatus, substrate processing method and non-transitory computer-readable recording medium therefor

Substrate mounting plate for substrate processing apparatus

A technique capable of exhausting a process gas in a wide pressure range includes a substrate processing apparatus including: a process chamber; a gas supply system configured to supply a process gas containing a compound capable of reacting with a metal; and a gas exhaust system configured to exhaust an inner atmosphere of the process chamber, wherein the gas exhaust system includes: a common exhaust piping; a first exhaust piping made of a resin incapable of reacting with the compound and whose one end is connected to the common exhaust piping via a first valve and the other end is connected to a first exhauster; and a second exhaust piping made of the metal and whose one end is connected to the common exhaust piping via a second valve and the other end is connected to a second exhauster.

Substrate processing apparatus

There is provided a substrate processing apparatus including a process chamber in which a substrate is accommodated, a processing gas supply system configured to introduce a processing gas containing hydrogen peroxide into the process chamber and an exhaust system configured to exhaust an interior of the process chamber, wherein at least one selected from the group of the process chamber, the processing gas supply system, and the exhaust system includes a metal member, the metal member exposed to the processing gas or a liquid generated by liquefying the processing gas is made of a material containing an iron element, and a surface of a plane of the metal members, which is exposed to the processing gas or the liquid, is formed of a layer containing iron oxide which is formed by performing a baking process on the metal member.

Substrate processing apparatus and metal member

There is provided a technique that includes a metal container including a process chamber configured to process a substrate, a substrate mounting plate rotatably installed in the container and having a plurality of substrate mounting surfaces circumferentially arranged at an upper surface thereof, a heater configured to heat the substrate mounted on each of the plurality of substrate mounting surfaces, a heat attenuator installed between the heater and the container, a gas supply part configured to supply a gas to the process chamber, and a support part configured to rotate the substrate mounting plate.

A substrate processing apparatus, including: a processing chamber having a first and a second processing regions; a substrate mounting table rotatably installed in the processing chamber on which a substrate is mounted, and a rotation instrument configured to rotate the substrate mounting table such that the substrate passes through the first processing region and the second processing region in this order, at least one of the first and the second processing regions including: a gas supply part including a line-shaped opening portion extending in a radial direction of the substrate mounting table and configured to supply a gas from the opening portion into the region; and a gap holding member protruding from a ceiling of the processing chamber opposing the substrate, around the opening portion, toward the substrate such that a space on the substrate has a predetermined gap to serve as a passage of the supplied gas.

Substrate processing apparatus, method of manufacturing semiconductor device, and method of processing substrate

A semiconductor device manufacturing method includes: a step wherein a processing substrate to be processed is placed on a substrate mounting member that is provided in a processing chamber having a plurality of gas supply regions; a film-forming step wherein a processing gas is supplied to the processing chamber, and the substrate is processed; a step wherein the substrate is carried out from the processing chamber; and a cleaning step wherein the density of the cleaning gas is controlled, while controlling cleaning gas quantities in the gas supply regions, respectively, in a state wherein the substrate is not placed in the processing chamber.

Semiconductor device manufacturing method and substrate processing method including a cleaning method

A substrate processing apparatus includes a substrate supporting pedestal having an upper substrate supporting pedestal and a lower substrate supporting pedestal which are vertically stacked, an upper resistance heater provided above the upper substrate supporting pedestal so as to be opposite to the upper substrate supporting pedestal, and a lower resistance heater provided under the lower substrate supporting pedestal so as to be opposite to the lower substrate supporting pedestal. Each of the upper substrate supporting pedestal and the lower substrate supporting pedestal is capable of mounting a substrate or substrates in a substantially horizontal position, and the lower substrate supporting pedestal including an opening which exposes the substrate in its entirety or openings which expose the substrates in their entireties as viewed from under the lower substrate supporting pedestal.

Growing community of inventors

Toyama, Japan

Tetsuaki Inada