Other

Sharp Kabushiki Kaisha Corporation

The University of Tokyo

The Foundation for the Promotion of Industrial Science

Koyo Engineering

Tetsu Tatsuma

Yasuhiko Arakawa

Noboru Oyama

Teruhisa Kotani

Kazuyuki Ishii

Kaoru Kitakizaki

Akira Fujishima

Osamu Hatozaki

Takayuki Noguchi

Yoshihito Watanabe

Masanori Haba

Shuichi Saitoh

Katsuhisa Kashiwazaki

Kengo Akagawa

Akiyoshi Sakoda

Masashi Obi

Kazuaki Kudo

Yoshihisa Ohko

A photodetector including a substrate, a light absorption layer arranged over the substrate, the light absorption layer including a stack including a semiconductor layer that absorbs light of a wavelength having an electric field vector parallel to a normal direction of a substrate surface, a lower contact layer arranged on a first side of the light absorption layer, a lower electrode contacting with the lower contact layer, an upper contact layer arranged on a second side of the light absorption layer, and an upper electrode contacting with the upper contact layer. An uneven structure including polarization-selective shapes of projections or depressions on the second side of the upper contact layer is provided, the shapes of projections or depressions each having a size of a wavelength or less of incident light in the semiconductor layer and half the wavelength or greater and being periodically arranged in at least one direction.

Photodetector

The present invention relates to a radioactive cesium adsorbent, a method for producing the same, and a method for decontaminating the environment from radioactive cesium with the adsorbent. The radioactive cesium adsorbent of the present invention includes a hydrophilic fiber substrate supporting a Prussian blue analog, in particular, Prussian blue, and the Prussian blue analog is immobilized in the inside of the fibers.

Radioactive cesium adsorbent, method for producing the same, and method for removing radioactive cesium in environment with said adsorbent

The inventive photoreactive device has a semiconductor and an oxidation-reduction material. The semiconductor has a conduction band with a potential and being capable of producing electrons under the irradiation of light on the semiconductor. The oxidation-reduction material has a redox potential being positive compared with the potential of the conduction band. The semiconductor supplies electrons into the oxidation-reduction material to reduce it under the irradiation of light for storing the electrons. The stored electrons are discharged from the oxidation-reduction material into a metal material to prevent the corrosion of the metal material.

Photoreactive devices, translucent members, ornaments, anticorrosive devices, devices for reducing oxygen and devices for controlling growth of microorganisms

A QCM sensor including a sensor device, the sensor device having a crystal substrate, on both of front and rear surfaces of which a pair of electrodes are disposed so as to oppose with each other and the QCM sensor detecting and quantitatively analyzing components of a sample from either a variation in a fundamental resonant frequency or a variation in an impedance when a surface of one of the pair of electrodes is immersed into either a sample gas or a sample solution. The sensor device is arranged in a multi-channel structure such that four mutually opposing electrodes ( A through A, B through B) are disposed on both front and rear surfaces of the crystal substrate each electrode being arranged to enable a fixation of a receptor which is different for each component of a sample to be detected and quantitatively analyzed, whereby the QCM sensor detects and quantitatively analyzes once the components of one sample different for different electrodes.

QCM sensor

Growing community of inventors

Tokyo, Japan

Tetsu Tatsuma