Tohoku University

Toshiba Memory Corporation

Nichia Corporation

Tohoku-microtec Co., Ltd.

Tetsu Tanaka

Mitsumasa Koyanagi

Takafumi Fukushima

Kang-Wook Lee

Masatsugu Ichikawa

Makoto Motoyoshi

Hajime Mushiake

Norihiro Katayama

Hisashi Kino

A display device includes a substrate including a first surface, and a second surface positioned at a side opposite to the first surface; a first light-emitting element located at a lateral side of the substrate; a plurality of light-receiving elements located at a second surface side of the substrate; a plurality of second light-emitting elements located on the first surface of the substrate; and a first drive element controlling driving of the second light-emitting elements based on output of the light-receiving elements. A light-emitting surface of the first light-emitting element is oriented in a first direction. The first direction is parallel to a direction from the first surface toward the second surface. Light-emitting surfaces of the second light-emitting elements are oriented in a second direction. The second direction is from the second surface toward the first surface.

Display device

A semiconductor device includes a metal column that extends in a stretching direction; a polymer layer that surrounds the metal column from a direction crossing the stretching direction; and a guide that surrounds the polymer layer in the crossing direction so as to be spaced from the metal column with the polymer layer interposed therebetween. A method for manufacturing semiconductor devices includes a step of filling a mixture containing metal particles and polymers in a guide; and a step of subjecting the mixture to a heat treatment so that the polymers agglomerate to the guide to form a polymer layer that makes contact with the guide and the metal particles agglomerate away from the guide with the polymer layer interposed therebetween to form a metal column that stretches in a stretching direction of the guide from the metal particles.

Semiconductor device and method for manufacturing the same

To miniaturize metal columns. A semiconductor device includes a metal column () that extends in a stretching direction; a polymer layer () that surrounds the metal column from a direction crossing the stretching direction; and a guide () that surrounds the polymer layer in the crossing direction so as to be spaced from the metal column with the polymer layer interposed therebetween. A method for manufacturing semiconductor devices includes a step of filling a mixture () containing metal particles () and polymers () in a guide (); and a step of subjecting the mixture to a heat treatment so that the polymers agglomerate to the guide to form a polymer layer () that makes contact with the guide and the metal particles agglomerate away from the guide with the polymer layer interposed therebetween to form a metal column () that stretches in a stretching direction of the guide from the metal particles.

The present invention relates to a chip support substrate including a lyophilic regionthat is formed on the substrate and that absorbs a chipA, and an electrodethat is formed on the substrate and in the lyophilic region and that generates electrostatic force in the chip, and to a chip support method including the steps of arranging the chip onto the lyophilic region of the chip support substrate with a liquid, the chip support substrate comprising the lyophilic region that is formed on the substrate, and the electrode that is formed on the substrate and in the lyophilic region, and generating the electrostatic force in the chip corresponding to the electrode by applying a voltage to the electrode.

Chip support substrate, chip support method, three-dimensional integrated circuit, assembly device, and fabrication method of three-dimensional integrated circuit

A brain probe includes: a core probe made from a metal; and n electrode plates attached so as to cover an entire side surface circumference of the core probe and forming n side planes providing an n-angular cross section (n is an integer equal to or greater than 3). Each of the electrode plates is manufactured by a LSI manufacturing process, and provided with at least one electrode and a lead-out wiring extending in a longitudinal direction of a side plane from each of the at least one electrode.

Growing community of inventors

Sendai, Japan

Tetsu Tanaka