Hitachi, Ltd.

Hitachi Chemical Company, Ltd.

Tetsu Oi

Toshio Kobayashi

Naoki Yamamoto

Kazumasa Takagi

Tokuumi Fukazawa

Nobuo Kotera

Kikuji Sato

Takaharu Noguchi

Tsuneo Suganuma

Takashi Nishida

Katsuki Miyauchi

Junji Shigeta

Nobuo Miyamoto

Takao Ketori

Kohji Tamura

Muneyasu Nakashima

Yutaka Miyoshi

Disclosed is a lithium oxide based amorphous material having a composition included in a region defined by lines connecting points A, B, C and D in the composition diagram of the ternary system of Li.sub.2 O.SiO.sub.2.P.sub.2 O.sub.5 shown in FIG. 1 of the accompanying drawings. This amorphous material can be formed by performing sputtering by using as a target a mixture of a lithium silicate/lithium phosphate composition and LiO.sub.2. This amorphous material is excellent in the ionic conductivity.

Lithium oxide based amorphous material and process for preparation

Disclosed is an amorphous substance represented by the following general formula:

Amorphous lithium fluoaluminate

A scintillator formed of a ZnWO.sub.4 single crystal having an absorption coefficient less than or equal to 1.8 cm.sup.-1 for the light having a wavelength of 520 nm is disclosed which has a luminescence wavelength of 480 nm and therefore can be combined with a photodiode, and which is high in radiation detection sensitivity, short in decay time, and specifically suitable for use in computed tomography.

Scintillator with ZnWO.sub.4 single crystal

A susceptor made of a conductive material which has a melting point higher than that of a starting material and which does not react with the melt of the starting material is heated to a temperature not lower than the melting point of the starting material by the radio frequency induction heating. The starting material is fed onto the upper surface of the heated susceptor at a predetermined rate so as to melt the starting material, the resultant melt of the starting material is caused to flow from the upper surface of the susceptor via the susceptor to the lower surface thereof, the melt is crystallized in touch with a seed crystal arranged on the lower surface in advance, and the seed crystal is transferred downwards, whereby a single crystal is grown. With this method, a large-sized single crystal of an insulator or a semiconductor can be readily produced, and besides a round rod-shaped single crystal, a prism-shaped or pipe-shaped single crystal can be obtained with its sectional dimensions fluctuating little.

Method for growing a pipe-shaped single crystal

A method of producing ferrite single crystals which comprises steps of melting a ferrite starting material in oxygen atmosphere containing nitrogen, argon or the like of a partial pressure of at least 0.1 atm. and solidifying the melt. According to this method, the popping out of the gas contained in the melt is prevented and the ferrite single crystals of high qualities can be produced easily.

Method of producing ferrite single crystals

A crystal for a scintillator is a single crystal of Bi.sub.4 Ge.sub.3 O.sub.12 containing up to 0.5% by weight of Bi.sub.4 Si.sub.3 O.sub.12 and/or up to 50 ppm of Gd. The light output of this crystal as a scintillator can be increased by about 20% as compared with the light output of the conventional crystal of additive-free Bi.sub.4 Ge.sub.3 O.sub.12.

Crystal for scintillator

A method for fabricating a rear core for the magnetic circuit of a Hall effect magnetic head is disclosed. The bottom size of the rear core protrusion is made substantially equal to the size of a Hall element. A gap is provided between the Hall element and the rear core. In order to minimize the gap, the rear core block is provided with supports for fabrication, whereby the gap between the Hall element and the bottom protrusion of the rear core is positioned accurately. The supports are removed at the end of fabrication. The bottom protrusion of the rear core prevented pressure from being applied to the Hall element, thus improving the sensitivity of the Hall effect magnetic head without increasing noises.

Method for fabrication of rear chip for hall effect magnetic head

A method for laser zone melting and apparatuses therefor wherein, in a zone melting method for a thin film due to the irradiation of laser beam, the laser beam is vibrated at the frequency of more than 1 Hz in the direction substantially perpendicular to the moving direction of a melting zone and the fluctuation of laser beam output is controlled to less than 1%. The zone-melted thin films manufactured by this method have good electrical properties resulting from less crystal imperfection, less non-stoichiometric excess atoms of the constituents, and less thickness corrugation of the film due to the suppression of temperature fluctuations and its spacial inhomogeneity at the time of zone melting.

Method and apparatus for laser zone melting

A method for producing an InSb thin film element comprising the steps of forming an InSb polycrystalline thin film on a substrate, melting and recrystallizing the InSb polycrystalline thin film at a temperature above the melting point of InSb, and disposing a diffusion source which contains at least one element selected from the group consisting of Cu, Au, Ag, Zn, Na, K, Cd, B, Li, Ca, Fe, Mg, Ba, Al and Pb and then heating the InSb thin film so as to dope it with the desired element or elements in a range in which the total quantity does not exceed a concentration of 1.times.10.sup.18 cm.sup.-3. The InSb thin film element produced by this method has a very little current noise and a high signal-to-noise ratio. Further more, simultaneous doping of the said predetermined element or said elements and sb is more effective to reduce the current noise.

Method for producing an InSb thin film element

A method for producing a unique InSb thin film element which comprises the steps of forming a thin film of InSb polycrystal on a substrate of insulating material, forming an oxide film on the InSb thin film, zone-melting the InSb thin film by heating the thin film covered with the oxide film to a temperature above the melting point of InSb in a controlled gaseous heat-treating atmosphere comprising an inert gas containing from 1 ppm to 3 .times. 10.sup.4 ppm of oxygen, which is replaceable by an addition of a tenfold amount of aqueous vapor to the extent of 10.sup.2 ppm of oxygen, and cooling the resultant element. An InSb thin film element produced in this way is suitable as a material for a magnetosensitive element of good performance, especially a low noise level or a high S/N ratio.

Method for producing an InSb thin film

A semiconductor magnetic head in which a polycrystal thin film of a semiconductor material containing at least a crystal particle having a longitudinal diameter of at least 30 .mu.m is employed as a magneto-sensitive element is disclosed. The semiconductor thin film containing the crystal particle of the longitudinal diameter at least 30 .mu.m can be easily formed with a good reproducibility by evaporating the semiconductor material on an insulation film containing not less than 3 mol % of alumina and then being subjected to a zone melting treatment.

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Tokyo, Japan

Tetsu Oi