Sharp Kabushiki Kaisha Corporation

Nanosys, Inc.

Tetsu Negishi

Hiroshi Iwata

Akihide Shibata

Akira Takahashi

Kenji Komiya

J Wallace Parce

Paul John Schuele

David P Stumbo

Xiangfeng Duan

Hiroshi Ohki

Francisco A Leon

Yoshifumi Yaoi

Takeshi Shiomi

Jeffrey L Miller

James M Hamilton

Katsumasa Fujii

Samuel Edward Martin

Cheri X Y Pereira

Yasunobu Okada

Satoshi Morishita

Fumiyoshi Yoshioka

A metal lineis formed in a linear area S of an insulative substrate, and moreover a metal lineis formed generally parallel to the metal linewith a specified distance thereto. The metal lineis connected to an n-type semiconductor coreof bar-like structure light-emitting elementsA toD, and the metal lineis connected to a p-type semiconductor layer. By dividing the insulative substrateinto a plurality of divisional substrates, a plurality of light-emitting devices in each of which a plurality of bar-like structure light-emitting elementsare placed on the divisional substrates are formed.

Light-emitting device manufacturing method, light-emitting device, lighting device, backlight, liquid-crystal panel, display device, display device manufacturing method, display device drive method and liquid-crystal display device

In a light emitting device, one hundred or more bar-like structured light emitting elements () each having a light emitting area of 2,500&#x3c0; &#x3bc;mor less are placed on a mounting surface of one insulating substrate (), so that the light emitting device fulfills little variation in luminance, long life, and high efficiency by dispersion of light emission with suppression of increase in temperatures in light emitting operations.

Light emitting device, method for manufacturing light emitting device, illuminating device, and backlight

A light-emitting element includes a first conductivity type semiconductor base, a plurality of first conductivity type protrusion-shaped semiconductors formed on the semiconductor base, and a second conductivity type semiconductor layer that covers the protrusion-shaped semiconductors.

Light emitting element and production method for same, production method for light-emitting device, illumination device, backlight, display device, and diode

This method for disposing fine objects, in a substrate preparing step, prepares a substrate having specified positions where fine objects () are to be disposed in an area where a first electrode () and a second electrode () face each other, and in a fluid introducing step, a fluid () is introduced on the substrate (). The fluid () contains a plurality of the fine objects (). The fine objects () are diode elements, each of which has, as an alignment structure, a front side layer () composed of a dielectric material, and a rear side layer () composed of a semiconductor. In the fine object disposing step, by applying an AC voltage to between the first electrode () and the second electrode (), the fine objects () are disposed by dielectrophoresis with the front side layer () facing up at the predetermined positions in the area (A) where the first electrode () and the second electrode () face each other.

Method for disposing fine objects, apparatus for arranging fine objects, illuminating apparatus and display apparatus

To facilitate electrode connections and achieve a high light emitting efficiency, a rod-like light-emitting device includes a semiconductor core of a first conductivity type having a rod shape, and a semiconductor layer of a second conductivity type formed to cover the semiconductor core. The outer peripheral surface of part of the semiconductor core is exposed.

Rod-like light-emitting device, method of manufacturing rod-like light-emitting device, backlight, illuminating device, and display device

The present invention provides methods and systems for nanowire alignment and deposition. Energizing (e.g., an alternating current electric field) is used to align and associate nanowires with electrodes. By modulating the energizing, the nanowires are coupled to the electrodes such that they remain in place during subsequent wash and drying steps. The invention also provides methods for transferring nanowires from one substrate to another in order to prepare various device substrates. The present invention also provides methods for monitoring and controlling the number of nanowires deposited at a particular electrode pair, as well as methods for manipulating nanowires in solution.

Methods for nanowire alignment and deposition

Growing community of inventors

Osaka, Japan

Tetsu Negishi