Toyota Jidosha Kabushiki Kaisha

Toyoda Gosei Co., Ltd.

Kabushiki Kaisha Toyota Chuo Kenkyusho

Denso Corporation

Rensselaer Polytechnic Institute

Tetsu Kachi

Tsutomu Uesugi

Masahiro Sugimoto

Hiroyuki Ueda

Narumasa Soejima

Kazuyoshi Tomita

Yoshitaka Nakano

Kenji Ito

Satoru Kato

Masakazu Kanechika

Takahiro Kozawa

Shinichi Hoshi

Tetsuo Narita

Hiroshi Ito

Naoki Shibata

Toshiya Uemura

Masayoshi Koike

Isamu Akasaki

Hiroshi Amano

Seiji Nagai

Shoji Mizuno

Shiro Yamasaki

Atsuo Hirano

Tadashi Ichikawa

Masaki Matsui

Mitsuhiro Inoue

Naohisa Nagasaka

Hiroyuki Tarumi

Kenji Nakashima

Yoshinori Tsuchiya

Masaki Hashimura

Kenji Itoh

Tat-Sing Chow

Yasuichi Mitsushima

Masanori Kojima

Daigo Kikuta

Hiroshi Tadano

Hideki Hosokawa

Osamu Ishiguro

Zhongda Li

Kazuyohi Tomita

A semiconductor device includes a GaN device provided with: a substrate made of a semi-insulating material or a semiconductor; a channel-forming layer including a GaN layer arranged on the substrate; a gate structure in which a gate-insulating film in contact with the GaN layer is arranged on the channel-forming layer, the gate structure having a gate electrode arranged across the gate-insulating film; and a source electrode and a drain electrode that are arranged on the channel-forming layer and on opposite sides interposing the gate structure. The donor element concentration at the interface between the gate-insulating film and the GaN layer and at the lattice position on the GaN layer side with respect to the interface is set to be less than or equal to 5.0&#xd7;10cm.

Semiconductor device and method for producing same

A semiconductor device includes a HEMT and a diode. The HEMT includes: a substrate having a GaN layer as a channel layer generating a two-dimensional electron gas and an AlGaN layer as a barrier layer on the GaN layer; a source electrode on the AlGaN layer ohmic contacting the AlGaN layer; a drain electrode on the AlGaN layer apart from the source electrode and ohmic contacting the AlGaN layer; an inter-layer insulating film on the AlGaN layer between the source electrode and the drain electrode; and a gate electrode on the inter-layer insulating film. The substrate includes an active layer region generating the two dimensional electron gas in the GaN layer. The diode includes an anode electrically connected to the gate electrode and a cathode electrically connected to the drain electrode.

Semiconductor device with high electron mobility transistor

A semiconductor device has a stacked structure in which a p-GaN layer, an SI-GaN layer, and an AlGaN layer are stacked, and has a gate electrode that is formed at a top surface side of the AlGaN layer. A band gap of the AlGaN layer is wider than a band gap of the p-GaN layer and the SI-GaN layer. Moreover, impurity concentration of the SI-GaN layer is less than 1&#xd7;10cm. Semiconductor devices including III-V semiconductors may have a stable normally-off operation.

III-V HEMT devices

A semiconductor device is provided with an electronic transit layer, an electron supply layer, a source region, a drain electrode, a source electrode and an insulated gate. In a region between the drain electrode and the insulated gate, a two-dimensional electron gas layer is configured to be generated at a hetero junction between the electronic transit layer and the electron supply layer. A part of the insulated gate is configured to face to the source region.

Semiconductor device

A semiconductor deviceis provided with a first hetero junctionconfigured with two types of nitride semiconductors having different bandgap energy from each other, a second hetero junctionconfigured with two types of nitride semiconductors having different bandgap energy from each other, and a gate electrodefacing the second hetero junction. The second hetero junctionis configured to be electrically connected to the first hetero junction. The first hetero junctionis a c-plane and the second hetero junctionis either an a-plane or an m-plane.

Semiconductor device having hetero junction

A nitride semiconductor devicecomprises a nitride semiconductor layer. A gate insulating filmis formed on the surface of the nitride semiconductor layer. The gate insulating filmincludes a portion composed of an aluminum nitride filmand a portion composed of an insulating materialthat contains at least one of oxygen or silicon. A region Wof the nitride semiconductor layerfacing the aluminum nitride filmis included in a region Wof the nitride semiconductor layerfacing a gate electrode. The nitride semiconductor devicemay further comprise a nitride semiconductor lower layer. The nitride semiconductor layermay be stacked on the surface of the nitride semiconductor lower layer. The nitride semiconductor layermay have a larger band gap than that of the nitride semiconductor lower layerand have a heterojunction formed there between.

Nitride semiconductor device including gate insulating portion containing AIN

An HEMT type transistor is disclosed that is a normally off type, and in which variations in the gate threshold voltage are small. A transistor is provided with a p-type region, a barrier region, an insulation film, a gate electrode. The channel region is connected to an upper surface of the p-type region. The channel region is n-type or i-type and provided with a first channel region and a second channel region. The barrier region is forming a hetero-junction with an upper surface of the first channel region. The insulation film is connected to an upper surface of the second channel region and an upper surface of the barrier region. The gate electrode faces the second channel region and the barrier region via the insulation film. The first channel region and the second channel region are arranged in series in a current pathway.

Transistor

A semiconductor device has a semiconductor substrate having a surface layer and a p-type semiconductor region, wherein the surface layer includes a contact region, a channel region and a drift region, the channel region is adjacent to and in contact with the contact region, the drift region is adjacent to and in contact with the channel region and includes n-type impurities at least in part, and the p-type semiconductor region is in contact with the drift region and at least a portion of a rear surface of the channel region, a main electrode disposed on the surface layer and electrically connected to the contact region, a gate electrode disposed on the surface layer and extending from above a portion of the contact region to above at least a portion of the drift region via above the channel region, and an insulating layer covering at least the portion of the contact region and not covering at least the portion of the drift region. The gate electrode and the contact region are insulated by the insulating layer, and the gate electrode and the drift region are in direct contact to form a Schottky junction.

A semiconductor device is provided with a drain electrode, a semiconductor base plate, an electric current regulation layercovering a part of a surface of the semiconductor base plateand leaving a non-covered surfaceat the surface of the semiconductor base plate, a semiconductor layercovering a surface of the electric current regulation layer, and a source electrodeformed at a surface of the semiconductor layer. A drift region, a channel forming region, and a source regionare formed within the semiconductor layer. The drain electrodeis connected to a first terminal of a power source, and the source electrodeis connected to a second terminal of the power source. With this semiconductor layer, it is possible to increase withstand voltage or reduce the occurrence of current leakage.

Semiconductor device having vertical electrodes structure

A light-emitting device includes a light-emitting diode, a red light-emitting phosphor layer, a yellow light-emitting phosphor layer, and a blue light-emitting phosphor layer. These layers are stacked in the stacking sequence of the yellow, blue, and red phosphor layers in order of increasing distance from the LED. The stacking sequence of the yellow and blue phosphor layers is first determined in such a manner that these layers do not interact with each other. The stacking sequence of the red and yellow phosphor layers and the stacking sequence of the red and blue phosphor layers are determined by the discriminant D. This determination of the stacking sequence suppresses a reduction in the conversion efficiency of the phosphors due to concentration quenching, improving the emission efficiency of the light-emitting device.

Light-emitting device including light-emitting diode and stacked light-emitting phosphor layers

A semiconductor devicecomprises a heterojunction between a lower semiconductor layermade of p-type gallium nitride and an upper semiconductor layermade of n-type AlGaN, wherein the upper semiconductor layerhas a larger band gap than the lower semiconductor layer. The semiconductor devicefurther comprises a drain electrodeformed on a portion of a top surface of the upper semiconductor layer, a source electrodeformed on a different portion of the top surface of the upper semiconductor layer, and a gate electrodeelectrically connected to the lower semiconductor layer. The semiconductor devicecan operate as normally-off.

Semiconductor devices

III-V hemt devices

A light source comprising a light emitting diode comprising a GaN-based compound and having a single quantum well structure, and a driving voltage source for applying a pulse voltage to the light emitting diode, wherein a voltage at a low level of the pulse voltage is set to a voltage lower than a voltage at which a fall time of the light emitting diode is made the longest.

Light source

A semiconductor device is formed by a first layercomposed of AlGaN, a second layercomposed of GaN, a gate electrode, a source electrode, and a drain electrode. The first layerhas a regionformed between the gate electrodeand the second layer. A channel is formed in the vicinity of the boundaryof the first layerand the second layer. The second layerhas p-type conductivity and is in contact with the source electrode When electrons flow in the channel, the electrons collide with surrounding atoms, and holes are formed. If holes are accumulated inside the semiconductor device, the presence of the accumulated holes causes dielectric breakdown. In the semiconductor device of the invention, holes are discharged to the outside of the device thorough the second layerand the source electrode, and accumulation of holes can be prevented.

Group III nitride semiconductor device

Growing community of inventors

Nisshin, Japan

Tetsu Kachi