Sharp Kabushiki Kaisha Corporation

Teruyuki Ueda

Hajime Imai

Tohru Daitoh

Tetsuo Kikuchi

Masahiko Suzuki

Hideki Kitagawa

Kengo Hara

Setsuji Nishimiya

Toshikatsu Itoh

Yoshihito Hara

Masaki Maeda

Tatsuya Kawasaki

Yoshiharu Hirata

Masamitsu Yamanaka

Hisao Ochi

Tetsuo Fujita

Hitoshi Takahata

Yoshimasa Chikama

Ryosuke Gunji

An active matrix substrate includes a plurality of source bus lines, a lower insulating layer covering the source bus lines, a plurality of gate bus lines formed above the lower insulating layer, and an oxide semiconductor TFT disposed to correspond to each pixel area. The oxide semiconductor TFT includes an oxide semiconductor layer disposed on the lower insulating layer, and a gate electrode disposed above the oxide semiconductor layer. The gate electrode is formed in a different layer from the gate bus lines, and is disposed to be separated from another gate electrode disposed in an adjacent pixel area. The gate electrode is covered by an interlayer insulating layer. The gate bus line is disposed on the interlayer insulating layer and in a gate contact hole formed in the interlayer insulating layer, and is connected to the gate electrode in the gate contact hole.

Active matrix substrate

The present invention has an object to reduce the number of necessary masks to reduce manufacturing cost. A method of manufacturing a display device includes: forming electrodes or first lines; forming a first insulating film covering the electrodes or the first lines; forming a second insulating film covering the first insulating film; collectively forming first contact holes through the first insulating film and the second insulating film so as to expose parts of the electrodes or parts of the first lines; planarizing a surface of the second insulating film; and forming a first conductive layer to be connected from the surface of the second insulating film to the exposed parts of the electrodes or the exposed parts of the first lines via the first contact holes.

Method of manufacturing display device and display device

According to an embodiment of the present invention, an active matrix substrate () includes a display region (DR) defined by a plurality of pixel regions (P) arranged in a matrix and a peripheral region (FR) located around the display region. The active matrix substrate includes a substrate (), a first TFT (), and a second TFT (). The first TFT is supported by the substrate and disposed in the peripheral region. The second TFT is supported by the substrate and disposed in the display region. The first TFT includes a crystalline silicon semiconductor layer (), which is an active layer. The second TFT includes an oxide semiconductor layer (), which is an active layer. The first TFT and the second TFT each have a top-gate structure.

Active matrix substrate, liquid crystal display device, and organic EL display device

Active matrix substrate and method for manufacturing same

An active matrix substrate includes a first TFT and a second TFT, in which the first TFT includes a first oxide semiconductor layer and a first gate electrode arranged on a part of the first oxide semiconductor layer with a first gate insulating layer interposed therebetween, the first gate insulating layer has a layered structure including a first insulating film and a second insulating film arranged on the first insulating film, the second TFT includes a second oxide semiconductor layer having a higher mobility than the first oxide semiconductor layer and a second gate electrode arranged on a part of the second oxide semiconductor layer with a second gate insulating layer interposed therebetween, and the second gate insulating layer includes the second insulating film and does not include the first insulating film, and the second TFT further includes a lower insulating layer including the first insulating film arranged between the second oxide semiconductor layer and a substrate.

Each of pixel regions of an active matrix substrate () includes: a lower insulating layer (); an oxide semiconductor layer () that is arranged on the lower insulating layer and includes an active region () of an oxide semiconductor TFT; an upper insulating layer () that is arranged on a portion of the oxide semiconductor layer so as not to be in contact with the lower insulating layer; an upper gate layer () that is arranged on the upper insulating layer and includes an upper gate electrode () and one of a plurality of gate bus lines (GL); and a source electrode and a drain electrode, wherein: the oxide semiconductor layerfurther includes an extension region () that extends from the active region () in a direction x different from a channel length direction y of the oxide semiconductor TFT as seen from a normal direction to the substrate; and the extension region () is arranged on the substrate side of one of the plurality of gate bus lines (GL) with an upper insulating layer () interposed therebetween, and includes a portion that extends so as to overlap with the one of the plurality of gate bus lines.

Active matrix substrate and production method therefor

An active matrix substrate includes: a substrate; lower bus lines and upper bus lines; a lower insulating layer positioned between the lower bus lines and the upper bus lines; an oxide semiconductor TFT that are disposed in each pixel region and have an oxide semiconductor layer disposed on the lower insulating layer; pixel electrodes disposed in each pixel region; and wiring connection units arranged in a non-display region. Each wiring connection unit includes: a lower conductive layer formed using the same conductive film as the lower bus lines; an insulating layer that extends on the lower conductive layer and includes the lower insulating layer. The lower bus lines and the lower conductive layer have a first laminated structure including a metal layer and a transparent conductive layer that covers an upper surface and a side surface of the metal layer.

Active matrix substrate and manufacturing method thereof

A semiconductor device includes a thin film transistor, wherein: a semiconductor layer of the thin film transistor has a layered structure including a lower oxide semiconductor layer including In, Ga, Zn and Sn and an upper oxide semiconductor layer arranged on the lower oxide semiconductor layer and including In, Ga and Zn; a thickness of the lower oxide semiconductor layer is 20 nm or less; an atomic ratio of Sn with respect to all metal elements of the lower oxide semiconductor layer is 5% or more; the upper oxide semiconductor layer includes no Sn, or an atomic ratio of Sn with respect to all metal elements of the upper oxide semiconductor layer is smaller than an atomic ratio of Sn with respect to all metal elements of the lower oxide semiconductor layer; and a first angle &#x3b8;between a side surface and a lower surface of the lower oxide semiconductor layer is smaller than a second angle &#x3b8;between a side surface and a lower surface of the upper oxide semiconductor layer.

Semiconductor device and method for manufacturing same

There is provided a high-definition active matrix substrate while suppressing an occurrence of pixel defects. The active matrix substrate includes a first semiconductor film corresponding to one of two sub-pixels adjacent to each other in a row direction, a second semiconductor film corresponding to the other of two sub-pixels, a transistor using part of the first semiconductor film as a channel in the row direction, and a pixel electrode connected to a drain electrode of the transistor through a contact hole. In a plan view, a distance (dc) in the row direction from a drain electrode-side edge of the channel to a bottom surface of the contact hole is 0.15 or more times a sub-pixel pitch (dp) in the row direction.

Active matrix substrate and liquid crystal display device

A method for manufacturing an active matrix board includes (E) a step of forming a source contact hole and a drain contact hole in an interlayer insulating layer such that a portion of a source contact region of an oxide semiconductor layer and a portion of a drain contact region thereof are exposed and forming a connecting portion contact hole in the interlayer insulating layer and a lower insulating layer such that a portion of a lower conductive layer is exposed; and (F) a step of forming a source electrode, a drain electrode, and an upper conductive layer on the interlayer insulating layer; and the step (E) includes (e-1) a step of forming a photoresist film on the interlayer insulating layer and (e-2) a step of forming a photoresist layer in such a manner that the photoresist film is exposed to light using a multi-tone mask and is then developed.

Method for manufacturing active matrix board

An active matrix substrate includes: a source metal layer including a plurality of source bus lines; a lower insulating layer covering the source metal layer; a oxide semiconductor TFT including an oxide semiconductor layer provided on the lower insulating layer; an inter-layer insulating layer covering the oxide semiconductor TFT; a pixel electrode provided on the inter-layer insulating layer; a common electrode including a plurality of sub common electrodes each of which is capable of functioning as a touch sensor electrode; a gate metal layer including a plurality of gate bus lines and a gate electrode; a drain metal layer including the drain electrode; and a plurality of touch sensor lines included in the drain metal layer and each electrically connected to any one of the sub common electrodes.

Active matrix substrate and liquid crystal display device with touch sensor

An active matrix substrate includes TFTs, an interlayer insulating layer, a common electrode, a first dielectric layer, pixel electrodes, a second dielectric layer, and touch wirings, in which each of the pixel electrodes at least partially overlaps the common electrode via the first dielectric layer, so that an auxiliary capacitance including each of the pixel electrodes, the common electrode, and the first dielectric layer is formed, the touch sensor electrodes include a first electrode, the touch wirings include a first wiring and a second wiring in the touch sensor electrodes, the second wiring extends to the other electrode across the first electrode when viewed from a normal direction, and a portion of the second wiring overlaps the first electrode via the first and the second dielectric layers, so that a touch wiring capacitance including the second wiring, the first electrode, the first and the second dielectric layers is formed.

Active matrix substrate, liquid crystal display device with touch sensor using active matrix substrate, and method for manufacturing active matrix substrate

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Sakai, Japan

Teruyuki Ueda