Elpida Memory, Inc.

Ps4 Luxco S.a.r.l.

Teruyuki Mine

Yasushi Yamazaki

Katsumi Koge

A semiconductor device includes the following elements. A semiconductor substrate has a device formation region. The device formation region is defined by first and second device isolation regions which extend in first and second directions, respectively. The device formation region has a first gate groove which extends in the second direction. A first gate insulating film is disposed in a lower portion of the first gate groove. A first gate electrode is disposed on the first gate insulating film. The first gate electrode is disposed in the lower portion of the first gate groove. A buried insulating film is disposed over the first gate electrode. The buried insulating film is disposed in an upper portion of the first gate groove.

Semiconductor device and method of forming the same

A method of manufacturing a semiconductor device may include, but is not limited to the following processes. A first recess is formed in a semiconductor substrate to define an active region on the semiconductor substrate. The active region includes a protruding portion of the semiconductor substrate surrounded by the first recess. The protruding portion has a sloped side surface. A first insulating film that fills the first recess is formed. A gate recess is formed in the active region to form a thin film portion that upwardly extends. The thin film portion is positioned between the gate recess and the first insulating film. The thin film portion is a part of the protruding portion. An upper part of the thin film portion is removed by wet-etching to adjust a height of the thin film portion.

Method of manufacturing semiconductor device

There are provided a method of manufacturing a semiconductor device which is capable of narrowing only the width of a Fin channel while maintaining the widths of source and drain regions, and a semiconductor device. The method of manufacturing a semiconductor device is a method of manufacturing a Fin type transistor, including: forming STI regionwith use of mask layerformed over silicon substrateas a mask; narrowing mask layerby wet etching to form narrowed mask layer; forming stopper oxide filmover a surface of narrowed mask layer, depositing polysiliconover an entire surface and then forming anti-reflective filmand photoresist; forming an opening at photoresistin a portion corresponding to a word line portion, removing anti-reflective filmand polysiliconin that portion to expose narrowed mask layerand then removing photoresist; and forming Fin channelby etching portions of silicon substratewhich lie on opposite sides of and below narrowed mask layerwith narrowed mask layeras a mask.

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Tokyo, Japan

Teruyuki Mine