Sharp Kabushiki Kaisha Corporation

Sumitomo Electric Industries, Limited

Teruyoshi Takakura

Shigetoshi Ito

Takeshi Kamikawa

Yuhzoh Tsuda

Mototaka Taneya

Yoshihiro Ueta

Kensaku Motoki

Takayuki Yuasa

Yoshihiko Tani

Yoshika Kaneko

Yoshimi Tanimoto

In a semiconductor laser device, a semiconductor layer includes a first groove formed on both sides of a ridge, a pair of second recesses facing each other and between which the ridge is interposed on a side of a light emitting surface, and a pair of third grooves in parallel to the first groove from the light emitting surface and interposing the ridge therebetween.

Semiconductor laser device

The present invention includes a first step of forming a nitride semiconductor layer by metal organic chemical vapor deposition by using a first carrier gas containing a nitrogen carrier gas and a hydrogen carrier gas of a flow quantity larger than that of the nitrogen carrier gas to thereby supply a raw material containing Mg and a Group V raw material containing N, and a second step of lowering a temperature by using a second carrier gas to which a material containing N is added, and hence solves the problems.

Method of manufacturing p-type nitride semiconductor and semiconductor device fabricated by the method

A nitride semiconductor laser device has a nitride semiconductor substrate that includes a dislocation-concentrated regionand a wide low-dislocation region and that has the top surface thereof slanted at an angle in the range of 0.3&#xb0; to 0.7&#xb0; relative to the C plane and a nitride semiconductor layer laid on top thereof. The nitride semiconductor layer has a depression immediately above the dislocation-concentrated region, and has, in a region thereof other than the depression, a high-quality quantum well active layer with good flatness and without cracks, a layer that, as is grown, readily exhibits p-type conductivity, and a stripe-shaped laser light waveguide region. The laser light waveguide region is formed above the low-dislocation region. This helps realize a nitride semiconductor laser device that offers a longer life.

Nitride semiconductor light-emitting device, method of fabricating it, and semiconductor optical apparatus

In a method for producing a nitride semiconductor light-emitting device according to the present invention, first, a nitride semiconductor substrate having groove portions formed is prepared. An underlying layer comprising nitride semiconductor is formed on the nitride semiconductor substrate including the side walls of the groove portions, in such a manner that the underlying layer has a crystal surface in each of the groove portions and the crystal surface is tilted at an angle of from 53.5&#xb0; to 63.4&#xb0; with respect to the surface of the substrate. Over the underlying layer, a light-emitting-device structure composed of a lower cladding layer containing Al, an active layer, and an upper cladding layer containing Al is formed. According to the present invention, thickness nonuniformity and lack of surface flatness, which occur when accumulating a layer with light-emitting-device structure of nitride semiconductor over the nitride semiconductor substrate, are alleviated while inhibiting occurrence of cracking.

Nitride semiconductor light-emitting device

Nitride semiconductor light-emitting device and method for producing same

Provided is a method for fabricating a nitride semiconductor light-emitting device including a nitride semiconductor substrate having a groove and a ridge formed on the top surface thereof so as to extend in the shape of stripes and a nitride semiconductor growth layer consisting of a plurality of nitride semiconductor layers laid on top of the nitride semiconductor substrate. The method involves a step of forming a 10 &#x3bc;m or more wide flat region above at least either of the groove and ridge by forming the nitride semiconductor growth layer on top of the nitride semiconductor substrate so that the height of the nitride semiconductor growth layer laid above the groove is smaller than the height of the nitride semiconductor growth layer laid above the ridge.

Growing community of inventors

Tenri, Japan

Teruyoshi Takakura