Kokusai Electric Corporation

Hitachi-kokusai Electric Inc.

Toshiba Mitsubishi-electric Industrial Systems Corporation

Kokusai Electric Co., Ltd.

Yokohama National University

Teruo Yoshino

Naofumi Ohashi

Masanori Nakayama

Tadashi Takasaki

Takeshi Yasui

Masaki Murobayashi

Tadashi Terasaki

Koichiro Harada

Katsuyoshi Hamano

Yasutoshi Tsubota

Toshiro Koshimaki

Keisuke Hattori

Tomohisa Okami

Masayuki Tomita

Tomohiko Takeda

Satoshi Shimamoto

Shun Matsui

Takashi Yahata

Tokunobu Akao

Nobuo Ishimaru

Hiroto Igawa

Satoru Takahata

Atsuo Kawamura

Mohammad Bani Shamseh

Yukio Akita

Naoto Niimura

Yukio Ozaki

Kazunori Suzuki

Reizo Nunozawa

Satohiro Okayama

Motoichi Kanazawa

Yasunobu Nakayama

Satoru Ichimura

Ken Sugihara

Takeshige Ishida

There is provided a technique capable of improving a uniformity of a substrate processing on a substrate surface. According to one aspect thereof, there is provided a substrate processing apparatus including: a substrate processing room; a plasma generation room; a gas supplier supplying a gas into the plasma generation room; a first coil surrounding the plasma generation room and to which an electric power is supplied; and a second coil surrounding the plasma generation room and to which an electric power is supplied. An axial direction of the second coil is equal to that of the first coil, a winding diameter of the second coil is different from that of the first coil, and a peak of a voltage distribution generated by supplying the electric power to the second coil does not overlap with a peak of a voltage distribution generated by the first coil.

Substrate processing apparatus, substrate processing method, method of manufacturing semiconductor device, and non-transitory computer-readable recording medium

Described herein is a technique capable of reducing an amount of moisture in a low temperature region in a substrate processing apparatus provided with a transfer chamber. According to one aspect of the technique, there is provided a substrate processing apparatus including: a process chamber provided with a heater; a load lock chamber; a transfer chamber provided between the process chamber and the load lock chamber and including a first region provided adjacent to the process chamber and a second region provided more adjacent to the load lock chamber than the first region and whose temperature is lower than a temperature of the first region; a detector capable of detecting an amount of moisture in the transfer chamber; and an inert gas supplier capable of supplying an inert gas toward the second region in the transfer chamber.

Substrate processing apparatus

There is provided a technique that includes abnormality detecting by picking up a sound generated from a transfer configured to operate in a vacuum and transport a substrate in a vacuum transfer chamber and compare the sound information with a preset threshold value to detect an abnormality of the transfer. The transfer includes a gas-filled container arranged in the vacuum transfer chamber and filled with a gas and a microphone installed inside the gas-filled container.

Method of processing substrate, substrate processing apparatus, method of manufacturing semiconductor processing apparatus, and recording medium

A substrate processing apparatus comprising: a substrate process chamber having a plasma generation space where a processing gas is plasma-excited and a substrate processing space communicating with the plasma generation space; a substrate mounting table installed inside the substrate processing space and for mounting a substrate; an inductive coupling structure provided with a coil installed to be wound around an outer periphery of the plasma generation space; a substrate support table elevating part for raising and lowering the substrate mounting table; a gas supply part for supplying the processing gas to the plasma generation space; and a controller for controlling the substrate support table elevating part, based on a power value of a high-frequency power supplied to the coil, so that the substrate mounted on the substrate mounting table is positioned at a target height according to the power value and spaced apart from a lower end of the coil.

Substrate processing apparatus, method of processing substrate, method of manufacturing semiconductor device, and recording medium

There is provided a technique capable of preventing a diffusion of a film-forming gas through a through-hole. According to one aspect thereof, there is provided a substrate processing apparatus including: a substrate mounting table; through-holes at the substrate mounting table; lift pins; an elevator capable of elevating or lowering the substrate mounting table or the lift pins or both; and a controller capable of controlling the elevator so as to perform: (a) placing a substrate on the lift pins protruding from a surface of the substrate mounting table through the through-holes; (b) placing the substrate on the surface of the substrate mounting table by moving the substrate mounting table or the lift pins or both; (c) stopping the substrate mounting table at a substrate processing position; and (d) moving the lift pins to positions in the through-holes at which the lift pins are out of contact with the substrate.

Substrate processing apparatus, substrate processing method, non-transitory computer-readable recording medium and method of manufacturing semiconductor device

Method of manufacturing semiconductor device, and recording medium

There is provided a technique that includes abnormality detecting by picking up a sound generated from a transfer configured to be capable of transporting the substrate and comparing a waveform of sound data with a preset threshold value to detect an abnormality of the transfer; and failure detecting by picking up vibration of the transfer and comparing a waveform of vibration data with a preset threshold value to detect a failure of the transfer.

Described herein is a technique capable of capable of uniformly processing a surface of a substrate even when an inductive coupling type substrate processing apparatus is used. According to one aspect of the technique, there is provided a substrate processing apparatus including: a process chamber in which a substrate is processed; a gas supply part configured to supply a gas into the process chamber; a high frequency power supply part configured to supply a high frequency power; a plasma generator including a resonance coil wound on a side of the process chamber, the plasma generator configured to generate a plasma in the process chamber when the high frequency power is supplied to the resonance coil; and a substrate support on which the substrate is placed such that a horizontal center position of the substrate in the process chamber does not overlap with a horizontal center position of the resonance coil.

Substrate processing apparatus, non-transitory computer-readable recording medium, method of manufacturing semiconductor device, and a substrate processing method

A substrate processing apparatus includes: a first process chamber where a substrate is subjected to a first process; a second process chamber where the substrate is subjected to a second process; a substrate support unit; a first electrode; a second electrode; an elevating unit; a gas supply unit supplying a first gas, a second gas and a third gas to the substrate; a power supply unit; a control unit controlling the elevating unit, the gas supply unit and the power supply unit so as to: (a) perform the first process by supplying the second gas activated by the first electrode and the first gas to the substrate; (b) move the substrate on the substrate support unit from the first process chamber to the second process chamber after (a); and (c) perform the second process by supplying the third gas activated by the second electrode to the substrate after (b).

In a power converter, a first single-phase AC conversion unit, which is connected to a first line of a first phase and a second line of a second phase of a first three-phase AC, a second single-phase AC conversion unit, which is connected to the second line of the second phase and a third line of a third phase of the first three-phase AC, and a third single-phase AC conversion unit, which is connected to the third line of the third phase and the first line of the first phase of the first three-phase AC, form a delta-connected load for an AC power supply system. At least the first single-phase AC conversion unit, the second single-phase AC conversion unit, and the third single-phase AC conversion unit form a first set in which respective output terminals are connected in series to one another, and the first set, and a second set and a third set, which are different from the first set, form each phase of a star connected power supply. A reactive power control unit controls a reactive power of a converter of each single-phase AC conversion unit based on a reactive power command value generated based on an acquired value related to an active power.

Power conversion device, motor driving system, and control method

A method of manufacturing a semiconductor device includes: loading a substrate into a substrate process chamber having a plasma generation space in which a processing gas is plasma-excited and a substrate process space communicating with the plasma generation space; mounting the substrate on a substrate mounting table installed inside the substrate process space; adjusting a height of the substrate mounting table so that the substrate is located at a height lower than a lower end of a coil, the coil configured to wind around an outer periphery of the plasma generation space so as to have a diameter larger than a diameter of the substrate; supplying the processing gas to the plasma generation space; plasma-exciting the processing gas supplied to the plasma generation space by supplying a high-frequency power to the coil to resonate the coil; and processing the substrate mounted on the substrate mounting table by the plasma-excitation.

Described herein is a technique capable of suppressing variations or deterioration in a processing rate between a plurality of substrates due to temperature. According to one aspect of the technique of the present disclosure, there is provided a substrate processing apparatus including: a process vessel constituting at least a part of a process chamber where a substrate is processed; a plasma generator comprising a coil provided to be wound around an outer periphery of the process vessel and a high frequency power supply configured to supply high frequency power to the coil; a substrate support provided in the process chamber and below a lower end of the coil; a heater provided in the substrate support; and a temperature sensor configured to measure a temperature of a portion of the process vessel located above an upper end of the coil.

Substrate processing apparatus, method of manufacturing semiconductor device and non-transitory computer-readable recording medium

Growing community of inventors

Toyama, Japan

Teruo Yoshino