Nippon Telegraph and Telephone Public Corporation

Teruo Tamama

Yoshihiko Mizushima

Yoshihito Amemiya

Katsumi Murase

An insulating film is prepared by oxidizing an amorphous silicon layer containing boron or boron and germanium. The amorphous silicon layer is partially oxidized inwardly from the surface of the amorphous silicon layer to form the insulating film, while the unoxidized portion of the amorphous silicon layer is used as a conductive layer. The amorphous silicon layer may contain boron or boron and an element of Group IV, for example germanium. The insulating film is utilized to fabricate a bipolar transistor.

Growing community of inventors

Houya, Japan

Teruo Tamama