Seiko Instruments Inc

Sii Semiconductor Corporation

Scs Promotion Company Limited

Ablic Inc.

Idemitsu Kosan Company, Limited

Cosmo Oil Co., Ltd.

Eneos Corporation

Japan Petroleum Energy Center

Teruo Suzuki

Yuji Kobayashi

Kaoru Sakaguchi

Takashi Imura

Kotaro Watanabe

Takao Nakashimo

Tomohiro Oka

Yotaro Nihei

Yasuhiko Ogura

Keita Katano

Shogo Teratani

Ryuzo Tanaka

Atsushi Haruyama

Provided is a voltage regulator capable of suppressing a current consumption in a non-regulation state with a simple circuit configuration. The voltage regulator includes an output transistor supplying an output voltage based on a control voltage, an error amplifier circuit supplying an amplified signal obtained by amplifying a difference between a voltage based on the output voltage and a reference voltage, a common source amplifier circuit supplying the control voltage to the output transistor based on the amplified signal, and a non-regulation state detection circuit supplying a detection signal to the common source amplifier circuit. The common source amplifier circuit includes a current control circuit including a plurality of parallel paths connecting between a control terminal of the output transistor and a power supply terminal, the plurality of parallel paths including a path to be closed in the non-regulation state and a path to be opened in the non-regulation state.

Voltage regulator

A method identifies the molecular structure of each component in a multicomponent mixture. The method includes (1) subjecting the multicomponent mixture to mass spectrometry to identify the formula of a molecule attributed to each obtained peak, and to identify abundance of the molecule; (2) subjecting the multicomponent mixture to collision induced dissociation; (3) performing mass spectrometry on each fragment ion generated via the collision induced dissociation in (2) to identify the core structure forming each fragment ion and abundance thereof; (4) dividing the molecules attributed to each peak in (1) into 'classes' based on 'a type and number of heteroatoms, and a DBE value', and on all the molecules belonging to each &#x201c;class&#x201d;, estimating the existence state and abundance thereof; and (5) determining the core structure forming each molecule, for which the existence state is estimated in (4), and determining and assigning a side chain and a cross-link thereto.

Method and program for approximately identifying molecular structure of multicomponent mixture

A voltage detector includes a first voltage detection circuit, a second voltage detection circuit, and a voltage divider circuit having a first node for providing a first divided voltage, and a second node for providing a second divided voltage. The second voltage detection circuit has a comparator circuit including a first input end connected to the first node and a second input end connected to a reference voltage. The first voltage detection circuit has a first NMOS transistor including a gate to which the second divided voltage is applied, and a constant current source with one end connected to the first NMOS transistor. The first NMOS transistor is configured to turn on in response to the second divided voltage being higher than a second threshold voltage and turn off in response to the second divided voltage being lower than the second threshold voltage.

Voltage detector

A voltage regulator includes an output transistor controlled by an error amplifier, first and second resistors connected in series between an output terminal and a ground terminal via a first node, third and fourth resistors connected in series between a load voltage monitoring terminal and the ground terminal via a second node, and a fifth resistor and a switching transistor connected in series between the first node and the ground terminal. When a voltage which is supplied to a load connected to the output terminal drops due to a parasitic resistance, a voltage at the second node falls below that of the first node. The switching transistor, then, turns on to connect the fifth resistor in parallel to the second resistor to lower the voltage at the first node. Feedback of this voltage to the error amplifier raises the voltage at the output terminal to a desired value.

The voltage regulator includes an overheat protection circuit. The overheat protection circuit includes: a temperature sensing circuit; a voltage difference sensing circuit configured to output a current depending on a voltage difference between a power source voltage to be supplied to a power supply terminal and the output voltage; an output current monitoring circuit; a second reference voltage circuit configured to generate a second reference voltage; a comparator circuit configured to compare an output voltage of the temperature sensing circuit and the second reference voltage to each other; and an overheat protection transistor is configured to turn off the output transistor when the result of the comparison indicates an overheated state. The second reference voltage of the second reference voltage circuit is controlled based on an output current of the voltage difference sensing circuit and on an output current of the output current monitoring circuit.

Provided is a voltage regulator having excellent transient response characteristics. The voltage regulator includes: a first switch connected between a gate of an output transistor and a phase compensation capacitor; a voltage follower having an input terminal connected to an output terminal of a differential amplifier; a second switch connected between an output terminal of the voltage follower and the phase compensation capacitor; and a comparator configured to compare a reference voltage and a feedback voltage. The first switch and the second switch are controlled with an output signal of the comparator.

To provide a voltage regulator capable of maintaining the accuracy of an output voltage even if it is set to an arbitrary output voltage. A voltage regulator includes an output transistor comprised of an NMOS transistor having a backgate grounded, an error amplifier circuit configured to amplify and output a difference between a divided voltage obtained by dividing an output voltage outputted from the output transistor and a reference voltage and thereby to control a gate of the output transistor, a constant voltage circuit, and a transistor having a gate inputted with a voltage of the constant voltage circuit, a drain connected to the gate of the output transistor, and a source connected to a source of the output transistor.

Provided is a variable output voltage regulator capable of reducing heat generation during an overcurrent protection operation even when a setting value of an output voltage is high. The variable output voltage regulator can change an output voltage by trimming a resistor of a voltage dividing circuit in response to a trimming signal output from a trimming signal generation circuit. The trimming signal is used to change a limiting voltage of a fold-back type overcurrent protection circuit.

Provided is a voltage regulator including a leakage current correction circuit capable of keeping the accuracy of an output voltage of the voltage regulator even when an output voltage of a reference voltage circuit is decreased due to the influence of a leakage current. The voltage regulator includes: a reference voltage circuit configured to output a reference voltage; an output transistor configured to output an output voltage; a voltage divider circuit configured to divide the output voltage to output a feedback voltage; an error amplifier circuit configured to amplify a difference between the reference voltage and the feedback voltage, and output the amplified difference to control a gate of the output transistor; and a leakage current correction circuit connected to an output terminal of the voltage divider circuit. The leakage current correction circuit is configured to decrease the feedback voltage to prevent the output voltage from dropping at high temperature.

Provided is a voltage regulator including a leakage current sink circuit capable of suppressing an influence of a leakage current of an output transistor at high temperature, and reducing power consumption of the voltage regulator at normal temperature. The voltage regulator includes: a reference voltage circuit configured to output a reference voltage; an output transistor configured to output an output voltage; a voltage divider circuit configured to divide the output voltage to output a feedback voltage; an error amplifier circuit configured to amplify a difference between the reference voltage and the feedback voltage, and output the amplified difference to control a gate of the output transistor; and a leakage current sink circuit connected to an output terminal and configured to be prevented from operating at normal temperature, and suppress an influence of a leakage current from the output transistor only at high temperature.

Voltage regulator having a temperature sensitive leakage current sink circuit

A voltage regulator having good transient response characteristics and maintaining stable operation is provided. The voltage regulator includes: a first MOS transistor having a gate terminal connected to an output terminal of the differential amplifier circuit; a first constant current source provided between the first MOS transistor and a ground terminal; an output MOS transistor having a gate terminal connected to a drain terminal of the first MOS transistor via a phase compensation circuit; a second MOS transistor having a gate terminal to which an output of the differential amplifier circuit is input and a drain terminal connected to the gate terminal of the output MOS transistor; and a second constant current source provided between the second MOS transistor and a ground terminal.

Voltage regulator with transient response

Provided is a voltage regulator capable of setting an accurate short-circuit current. Used as a circuit for determining a current value of a short-circuit current of an overcurrent protection circuit is not a resistor for converting current into voltage but a circuit for controlling in the form of current, that is, a circuit of an N-channel depletion type transistor including a gate and a drain that are connected to each other and operating in a non-saturated state. The N-channel depletion type transistor has process fluctuations that are linked with those of a detection transistor, and hence an accurate short-circuit current may be set without trimming.

Provided is a reference voltage circuit having a soft start function, which is small in circuit size and is capable of providing a continuous voltage. The reference voltage circuit includes a reference voltage section and a soft start circuit. The reference voltage section includes a depletion mode MOS transistor and a first enhancement mode MOS transistor. The soft start circuit includes: a second enhancement mode MOS transistor having a gate connected to a gate and a drain of the first enhancement mode MOS transistor, and a drain connected to an output terminal of the reference voltage circuit; a MOS switch having one terminal connected to an output terminal of the reference voltage section, and another terminal connected to the drain of the second enhancement mode MOS transistor; and a constant current source and a capacitor connected in series between a power supply and a ground.

Reference voltage circuit

Provided are a memory circuit having a small circuit scale and a voltage detection circuit including the memory circuit. An NMOS transistor () is in an off state during loading and writing and is in an on state during reading. An NMOS transistor () is turned on when a high level input is received and turned off when a low level input is received. An NMOS transistor () is in the off state during loading and writing and is in the on state during reading. A PMOS transistor () is in the on state during loading and is in the off state during writing and reading. A PMOS transistor () is turned off when the high level input is received during loading, is turned on when the low level input is received during loading, and is in the on state during writing and reading.

Memory circuit and voltage detection circuit including the same

Provided is a voltage regulator for limiting a rush current from an output stage transistor. The voltage regulator includes an output current limiting circuit having a low detection current value and an output current limiting circuit having a high detection current value, and is structured so as to enable operation of the output current limiting circuit having a low detection current value during a time period from a state in which an overheat protection circuit detects overheat and an output current is stopped to a state in which an overheat protection is canceled and a predetermined time passes. Accordingly, after the overheat protection is cancelled, an excessive rush current can be limited.

Growing community of inventors

Chiba, Japan

Teruo Suzuki