Canon Kabushiki Kaisha

Other

Teruo Misumi

Keishi Saitoh

Kyosuke Ogawa

Masahiro Kanai

Shigeru Shirai

Tadaji Fukuda

Tetsuo Sueda

Yoshio Tsuezuki

Junichiro Kanbe

Katsumi Nakagawa

Yutaka Hirai

Toshiyuki Komatsu

Yoichi Osato

Minoru Kato

Ryuji Okamura

Yasuyoshi Takai

Keiichi Murai

Tetsuya Takei

Hirokazu Otoshi

Nobuo Kitajima

Hideyo Kondo

Masaaki Yamamura

Isamu Kajita

Noboru Narita

An electrophotographic apparatus employs a charger for charging a cylindrical photosensitive member having a photoconductive layer of amorphous silicon containing 10 to 40 atomic % hydrogen; an exposing station for imagewise exposing the member to form an electrostatic latent image; a developer station for developing the latent image to form a toner image; a transfer station for transferring the toner image to an image receiving sheet and a blade for cleaning the surface of the cylindrical member.

Electrophotographic method using a cleaning blade to remove residual

A layer of amorphous silicon containing H, preferably 10-40 atomic % H, is used as a photoconductive layer for electrophotographic photosensitive member.

Electrophotographic photosensitive member and process for production

An electrophotographic process is conducted by charging a cylindrical photosensitive member having a photoconductive layer of amorphous silicon containing 10 to 40 atomic % hydrogen; imagewise exposing the member to form an electrostatic latent image; developing the latent image to form a toner image; transferring the toner image to an image receiving sheet and thereafter cleaning the surface of the cylindrical member with a cleaning blade.

A layer of amorphous silicon containing H, preferably 10-40 atomic % H, which is used as a photoconductive layer for electrophotographic photosensitive member, is formed by plasma CVD using a silane gas of a higher than monosilane.

CVD method for forming a photoconductive hydrogenated a-Si layer

A deposited film-forming apparatus comprising a reaction chamber capable of maintaining at a reduced pressure, means for arranging a substrate on which a film is to be formed in said reaction chamber, a gas feed means for supplying a gaseous raw material into said reaction chamber and means for introducing a microwave energy into said reaction chamber, characterized in that said gas feed means is arranged in the space circumscribed by said substrate, said gas feed means comprises a multiple pipe structure, said multiple pipe structure being connected to a gas supply source for supplying said gaseous raw material, the respective constituent pipes of said multiple pipe structure being provided with a plurality of gas spouting holes such that said gas spouting holes are in communication with each other, and means for applying a bias voltage between said substrate and said gas feed means.

Microwave plasma CVD apparatus comprising coaxially aligned multiple gas

A plasma CVD apparatus for forming a deposition film on a base by causing a discharge in a space between the base and an electrode has an auxiliary member removably arranged in electrical contact to the electrode on a face of the electrode which contributes to the discharge. The auxiliary member thus acts as the electrode.

Plasma CVD apparatus

In a microwave plasma chemical vapor deposition apparatus which comprises a substantially enclosed deposition chamber, a means for supporting a substrate on which a functional deposited film is to be formed, a means for supplying raw material gases, a means for evacuating the inside of said deposition chamber and a means for generating microwave discharge plasmas in said deposition chamber which includes a waveguide extending from a microwave power source and a microwave introducing window through which a microwave energy is to be introduced into said deposition chamber, the improvement characterized in that said apparatus is provided with a holding member capable of holding said microwave introducing window and said substrate and capable of sealing said deposition chamber in a air-tight state upon film-formation and said apparatus is provided with a means for transporting said holding member under vacuum condition.

Microwave plasma chemical vapor deposition apparatus for mass-producing

A photoconductive member comprises a support for a photoconductive member and an amorphous layer having photoconductivity and containing an amorphous material comprising silicon atom as a matrix, said amorphous layer having a first layer region containing oxygen atoms and a second layer region containing Group III atoms of the Periodic Table Such that said Group III atoms are continuously distributed in the direction of the layer thickness and enriched at the support side and wherein oxygen is absent from said amorphous layer exclusive of the first layer region, said first layer region being present internally in the support side portion of the amorphous layer, and there being the following relationship:

Layered photoconductive member comprising amorphous silicon

A light-receiving member comprises a substrate for light-receiving member and a light-receiving layer of a multi-layer structure having a first layer comprising an amorphous material containing silicon atoms and germanium atoms, a second layer comprising an amorphous material containing silicon atoms and exhibiting a photoconductivity, and a surface layer comprising an amorphous material containing silicon atoms and carbon atoms provided on the substrate successively from the substrate side, said light-receiving layer having at least one pair of nonparallel interfaces within a short range and said nonparallel interfaces being arranged in a large number in at least one direction within the plane perpendicular to the layer thickness direction.

Member having light receiving layer with nonparallel interfaces

A plasma chemical vapor deposition apparatus comprises internal construction members comprising aluminum having surfaces exposed to a plasma atmosphere.

A light-receiving member comprises a substrate having a large number of projection parts, whose cross-sectional shape at a given cross-sectional position is a projection shape formed of a main peak and an auxiliary peak as overlapped, on the surface of the substrate, and a light-receiving layer comprising a layer containing an amorphous material including silicon atoms, at least one part of the layer region of the layer being photosensitive, and a surface layer having a reflection-preventive function. An electrophotographic system comprises the above-mentioned light-receiving member.

Light-receiving member

A substrate for light-receiving members has a large number of protruding portions on a surface thereof, each of said protruding portions having at a predetermined cut position a sectional shape comprising a main projection and a subprojection, the main projection and the subprojection overlapping each other.

Member having light receiving layer and substrate with overlapping

A light-receiving member comprises a substrate having a large number of protruding portions on a surface thereof, each of said protruding portions having at a predetermined cut position a sectional shape comprising a main projection and a subprojection, the main projection and the subprojection overlapping each other, and a light-receiving layer comprising a layer comprising an amorphous material containing silicon atoms, at least a part of the layer region of which has photosensitivity and a surface layer comprising an amorphous material containing silicon atoms and carbon atoms.

Member having substrate with irregular surface and light receiving layer

A light-receiving member comprises a substrate having a large number of protruding portions on a surface thereof, each of said protruding portions having at a predetermined cut position a sectional shape comprising a main projection and a subprojection, the main projection and the subprojection overlapping each other, and a light-receiving layer of a multi-layer structure having a first layer comprising an amorphous material containing silicon atoms and germanium atoms and a second layer comprising an amorphous material containing silicon atoms and exhibiting photoconductivity provided on said substrate successively from the substrate side.

Member having substrate with projecting portions at surface and light

A light-receiving member comprises a substrate having a large number of protruding portions on a surface thereof, each of said protruding portions having at a predetermined cut position a sectional shape comprising a main projection and a subprojection, the main projection and the subprojection overlapping each other, and a light-receiving layer with a multi-layer structure having a first layer comprising an amorphous material containing silicon atoms and germanium atoms, a second layer comprising an amorphous material containing silicon atoms and exhibiting photoconductivity, and a surface layer having the reflection preventive function provided successively from the substrate side, said light-receiving layer containing at least one selected from oxygen atoms, carbon atoms and nitrogen atoms.

Growing community of inventors

Kawasaki, Japan

Teruo Misumi