Nec Corporation

Teruo Kusaka

Nobuaki Takahashi

Naoji Senba

Mitsuma Ooishi

Atsushi Nishizawa

Taizo Tanaka

An EL display device has organic EL elements. In each organic EL element, an organic thin film having a transparent electrode on one surface and a metal electrode on the other surface is formed on a substrate, and positive and negative carriers are injected from the transparent electrode and the metal electrode, respectively, to emit light. The substrate is a circuit board having a metal interconnection, and the metal electrode of each organic EL element is formed at a predetermined portion on the upper surface of the circuit board.

EL display device using organic EL element having a printed circuit board

A solid relay having a light emitter and a photodetector and a method of producing the same are disclosed. A planer thyristor, photodiode, phototransistor or similar photodetector is formed on an Si substrate or wafer. The surface of the photodetector is covered with an SiO.sub.2, PSG (Phospher-Silicate Glass) or similar transparent insulation film. An ITO (Indium Tin Oxide) or similar transparent film, an organic thin film and a metal electrode are sequentially formed on the transparent insulation film, constituting a light emitter. The laminate is separated from the wafer in the form of a chip by dicing. The chip is bonded to a lead frame, connected to the leads of a lead frame by wire bonding, and then sealed with epoxy resin or similar resin.

Solid relay and method of producing the same

Metal electrodes (cathode) are made from a plurality of materials wherein they are not simply superposed one another along the sectional direction, but the metal electrodes (cathode) are in contact with an organic thin film in such that they exhibit a difference in magnitude of work functions dependent upon their disposed positions in the plane. More specifically, a local metal electrode being in contact with the organic thin film inside a light-emitting device in the plane is formed from a material having a small work function, while the peripheral metal electrode which encloses the local metal electrode, wiring sections other than the light-emitting device and the like are formed from materials each having a lager work function than that of the local metal electrode.

Organic thin film light-emitting device having second electrodes layer

A sealing structure for bumps on a semiconductor integrated circuit chip to be bonded through the bumps onto a circuit board is provided wherein a plurality of pads are formed on the semiconductor integrated circuit chip. Each of the pads is formed with a bump thereon. A coating material is provided to coat at least surfaces of the above a plurality of bumps. The material is made of an insulation material having a hardness sufficiently small for showing, when bonding the chip onto the circuit board, a deformation thereby at least a top portion of each of the bumps is made contact with pads provided on the circuit board.

Sealing structure for bumps on a semiconductor integrated circuit chip

A method of fabricating an integrated circuit chip package is provided in which a multi-chip module is formed by mounting a plurality of IC chips on a single silicon circuit board by means of flip-chip interconnection. Compared with a conventional multi-chip module in which, in order to obtain a uniform gap between IC chips and a silicon circuit board, metal bumps provided on both the silicon circuit board and the IC chips are used, such gap is defined in the present method by thicknesses of organic insulating films formed on both the IC chips and the circuit board. That is, height of metal bumps is selected such that it is smaller than a sum of the thicknesses of the insulating films and that closed spaces due to melting of solder for metal bump connection is prevented from being formed between the organic insulating films.

Method of fabricating integrated circuit chip package

In a packaging method for a flip-chip type semiconductor device, the method in which the rear surface sides of a plurality of semiconductor chips having solder bump electrodes on their front surfaces are fixed temporarily with an adhesive to the respective predetermined locations on the flat surface of a block, the block and a circuit board are positioned by placing the flat surface of the block opposed to the front surface of the circuit board where pads are formed, the solder bump electrodes and the pads are brought into contact by bringing them close to each other without the intermediary of soldering flux, and the plurality of semiconductor chips are bonded in a lump to the circuit board by welding the solder bump electrodes to the pads through reflowing of the solder of the solder bump electrodes by subjecting them to heat treatment.

Packaging method for flip-chip type semiconductor device

A planar type thyristor has a semiconductor substrate of one conductivity type, a first and second regions of other conductivity type formed in the substrate and a third region of the one conductivity type formed in one of the first and second regions. An electrically floating electrode is formed on the substrate between the first and second region via an insulator film and a control electrode is formed on the floating electrode via another insulator film. A gate trigger current is controlled by a voltage applied to the control electrode.

Growing community of inventors

Tokyo, Japan

Teruo Kusaka