Fujitsu Corporation

Fujitsu Optical Components Limited

Fujitsu Semiconductor Limited

Teruo Kurahashi

Yoshinobu Kubota

Masaharu Doi

Shuntaro Makino

Yasuyoshi Mishima

Yasuhiro Ohmori

Tadao Nakazawa

Minoru Seino

Takashi Yamane

Shintaro Takeuchi

Yoshihiko Yoshida

Yukie Sakita

Kenji Ishikawa

Kunio Sugeta

Hideharu Shido

Takeo Nagata

Masaki Sugiyama

Takehito Tanaka

Shinji Maruyama

Nobuaki Mitamura

Manabu Sakamoto

An optical device includes a substrate, a first cladding layer that is laminated on one surface of the substrate, and a first optical waveguide that is formed in the first cladding layer at a side opposite to the substrate in the first cladding layer. The optical device further includes an electro-optic crystal layer that is laminated on a surface of the first cladding layer at a side opposite to the substrate, and a second optical waveguide that is formed of the electro-optic crystal layer on a surface of the electro-optic crystal layer at a side opposite to the first cladding layer. The optical device further includes a second cladding layer that is laminated on a surface of the electro-optic crystal layer at a side opposite to the first cladding layer.

Optical device having dual waveguides with one being an electro-optic crystal waveguide

An optical device includes a thin film Lithium Niobate (LN) layer, a first optical waveguide, and a second optical waveguide. The thin film LN layer is an X-cut or a Y-cut LN layer. The first optical waveguide is an optical waveguide that is formed on the thin film LN layer along a direction that is substantially perpendicular to a Z direction of a crystal axis of the thin film LN layer. The second optical waveguide is an optical waveguide that is routed and connected to the first optical waveguide. At least a part of a core of the first optical waveguide is made thicker than a core of the second optical waveguide.

Optical device and optical communication apparatus

An optical device includes an electro-optic crystal layer, a first optical waveguide formed in the electro-optic crystal layer, and an electrode that applies an electric signal to the first optical waveguide. Further, the optical device includes a second optical waveguide in an amorphous state formed in the electro-optic crystal layer and connected to the first optical waveguide.

An optical waveguide device includes a substrate on which an intermediate layer, a thin-film LN layer of lithium niobate, and a buffer layer are stacked; an optical waveguide formed in the thin-film LN layer; and a plurality of electrodes near the optical waveguide. The intermediate layer and the buffer layer contain a same material of a metal element of any one of group 3 of group 18 of a periodic table of elements.

Optical waveguide device

An optical waveguide device includes an intermediate layer, a thin-film LN layer including X-cut lithium niobate, and a buffer layer stacked on a substrate; an optical waveguide formed in the thin-film LN layer; and an electrode for driving. The intermediate layer is formed by an upper first intermediate layer and a lower second intermediate layer, the second intermediate layer having a permittivity that is smaller than a permittivity of the first intermediate layer.

A method for manufacturing a P-type MOS transistor includes forming a gate insulating film on the substrate, forming a gate electrode from amorphous silicon containing no impurities on the gate insulating film, performing a heat treatment for controlling the film characteristics of the amorphous silicon, depositing a nickel (Ni) layer on the gate electrode, and forming nickel silicides from the gate electrode and the nickel (Ni).

Method for manufacturing a P-type MOS transistor, method for manufacturing a CMOS-type semiconductor apparatus having the P-type MOS transistor, and CMOS-type semiconductor apparatus manufactured using the manufacturing method

A method for fabricating an electron device on a substrate includes the steps of forming a dummy film over the substrate such that the dummy film covers a device region of the substrate and an outer region of the substrate outside the device region, forming a dummy pattern by patterning the dummy film such that the dummy pattern has a first height in the device region and a second height smaller than the first height in the outer region, forming another film over the substrate such that the film covers the dummy pattern in the device region and in the outer region with a shape conformal to a cross-sectional shape of the dummy pattern, and applying an anisotropic etching process acting generally perpendicularly to the substrate such that a surface of the substrate is exposed in the device region and in the outer region.

Fabrication process of a semiconductor device to form ultrafine patterns smaller than resolution limit of exposure apparatus

A semiconductor device fabrication method by which CMOS transistors with low-resistance metal gate electrodes each having a proper work function can be fabricated. A HfN layer in which nitrogen concentration in an nMOS transistor formation region differs from nitrogen concentration in a pMOS transistor formation region is formed. A MoN layer is formed over the HfN layer and heat treatment is performed. Nitrogen diffuses from the MoN layer into the HfN layer in which nitrogen concentration is low and a work function is set by the HfN layer according to nitrogen concentration which depends on the nitrogen content of the HfN layer before the heat treatment and the amount of nitrogen that diffuses into the HfN layer. On the other hand, nitrogen hardly diffuses from the MoN layer into the HfN layer which originally has a certain nitrogen content, and a work function is set by the HfN layer according to nitrogen concentration in the HfN layer before the heat treatment. By controlling the nitrogen content of each layer and the amount of nitrogen that diffuses, a low-resistance metal gate electrode having a predetermined work function can be formed in each of the nMOS transistor formation region and the pMOS transistor formation region.

Method for manufacturing a semiconductor device

An MIM device includes a lower electrode of a metal nitride film, a hysteresis film of an oxide film containing Nb formed on the lower electrode, and an upper electrode of a metal nitride film formed on the hysteresis film.

MIM device and electronic apparatus

This invention aims at providing an optical waveguide device capable of stably operating for an extended period of time. The optical waveguide device comprises an optical waveguide path formed inside a surface of an electro-optical substrate, a buffer layer formed on the optical waveguide path, and a driving electrode for impressing an electric field so as to change a refractive index of the optical waveguide path, wherein the buffer layer is made of a transparent dielectric or insulator of a mixture between silicon dioxide and an oxide of at least one element selected from the group consisting of the metal elements of the Groups III to VIII, Ib and IIb of the Periodic Table and semiconductor elements other than silicon, or a transparent dielectric or insulator of an oxide between silicon and at least one of the metal elements and semiconductor elements described above.

Growing community of inventors

Kawasaki, Japan

Teruo Kurahashi