Siltronic Ag

Permelec Electrode Ltd.

Puretron Ltd.

Teruo Haibara

Yoshihiro Mori

Etsuko Kubo

Masashi Uchibe

Kenichi Uemura

Yoshinori Nishiki

Masaaki Kato

Tsuneto Furuta

Thomas Buschhardt

Diego Feijoo

Guenter Schwab

Clemens Zapilko

Kuniaki Yamada

Takio Adachi

Takashi Mouri

Youichi Shimoi

Etsuko Tanabe

A cleaning method for cleaning an object involves disposing the object in a cleaning liquid held in a cleaning tank; and ultrasonically vibrating the cleaning liquid via an intermediate medium in contact with the cleaning tank, wherein the ultrasonically vibrating includes: ultrasonically vibrating the cleaning liquid with a first difference between respective sonic velocities allowable in the cleaning liquid and the intermediate medium; and ultrasonically vibrating the cleaning liquid with a second difference between the respective sonic velocities allowable in the cleaning liquid and the intermediate medium, wherein the second difference is different from the first difference.

Ultrasonic cleaning method

A wax removal method uniformly removes wax adhering to a wafer surface and reduces the problems of re-adhesion of particles and filter clogging of a cleaning bath during cleaning. The method uses cleaning liquid which contains microbubbles.

Cleaning method of semiconductor wafer

An ultrasonic cleaning method for cleaning an object in a liquid in which a gas is dissolved includes preparing the liquid in which the gas is dissolved and stirring the liquid while irradiating the liquid with the ultrasonic waves so as to realize a state where bubbles containing the gas dissolved in the liquid continue to be generated. The object is cleaned in the state where the bubbles containing the gas continue to be generated.

Ultrasonic cleaning method and ultrasonic cleaning apparatus

A cleaning method involves: disposing in a cleaning liquid held in a cleaning tank an object to be cleaned; and ultrasonically vibrating the cleaning liquid via an intermediate medium in contact with the cleaning tank to clean said object, the ultrasonically vibrating involving: ultrasonically vibrating the cleaning liquid with the cleaning liquid and the intermediate medium allowing sonic velocities, respectively, having a first difference; and ultrasonically vibrating the cleaning liquid with the cleaning liquid and the intermediate medium allowing sonic velocities, respectively, having a second difference different from the first difference.

An ultrasonic cleaning method for cleaning an object in a liquid in which a gas is dissolved includes preparing the liquid in which the gas is dissolved. The object is cleaned while applying ultrasonic waves to the liquid so that a ratio determined by dividing a vibration strength of the liquid at a fourth-order frequency of the ultrasonic waves by a vibration strength of the liquid at a fundamental frequency of the ultrasonic waves is larger than 0.8/1000.

A dissolved nitrogen concentration monitoring method is used for monitoring a dissolved nitrogen concentration of a cleaning liquid when an ultrasonic wave is irradiated onto the cleaning liquid in which a substrate is dipped. The method includes measuring an amount of increase of a dissolved oxygen concentration of the cleaning liquid resulting from an oxygen molecule generated from a water molecule as a result of a radical reaction caused by ultrasonic wave irradiation. A dissolved nitrogen concentration of the cleaning liquid is calculated from the measured amount of increase of dissolved oxygen concentration based on a predetermined relationship between a dissolved nitrogen concentration and an amount of increase of dissolved oxygen concentration.

Dissolved nitrogen concentration monitoring method, substrate cleaning method, and substrate cleaning apparatus

A calibration method for calibrating a measurement device for measuring a concentration of a gas dissolved in a liquid includes varying the concentration of the gas dissolved in the liquid, and predetermining, as a reference concentration, a concentration of the gas at which an intensity of luminescence produced when the liquid is irradiated with ultrasonic waves shows a peak. The liquid is illuminated with ultrasonic waves while varying the concentration of the gas in the liquid and a measured value is measured, using the measurement device, as a concentration of the gas in the liquid when the intensity of the luminescence shows a peak. The measurement device is calibrated based on the measured value and the reference concentration.

Cleaning apparatus, measurement method and calibration method

A micro-bubble generating device is provided with a micro-bubble generating mechanism and a leading conduit provided with a widening section and a tube part, the widening section and the tube part in communication with each other in the leading conduit. The widening section has a hollow shape which has an axis Z as a central axis, and has base surfaces and a peripheral surface, and communicates with a nozzle of the micro-bubble-generating mechanism via one base surface of the widening section, and communicates with the tube part via the other base surface. The cross section orthogonal to a flow axis Z of the micro-bubbles of the widening section is larger than the cross section orthogonal to the flow axis Z of the tube part.

Micro bubble generating device and silicon wafer cleaning apparatus

A method for the wet-chemical treatment of a semiconductor wafer involves: a) rotating a semiconductor wafer; b) applying a cleaning liquid comprising gas bubbles having a diameter of 100 &#x3bc;m or less to the rotating wafer such that a liquid film forms on the wafer; c) exposing the rotating semiconductor wafer to a gas atmosphere containing a reactive gas; and d) removing the liquid film from the wafer.

Method for the wet-chemical treatment of a semiconductor wafer

A cleaning liquid for an electronic material, in particular, a silicon wafer, uses ultra-pure water or hydrogen water as raw material water, and performs cleaning in combination with ultrasonic irradiation under the presence of hydrogen micro-bubbles. The method enables efficient cleaning and removal of particle components and the like on the wafer surface and prevention of re-contamination.

Cleaning liquid and cleaning method for electronic material

A method for the supply of a constant-concentration ozonated water, employs a unit for producing ozonated water and a system for using the ozonated water at a place separated therefrom, interposing an ozonated water circulating line between the ozonated water producing unit and the place for using the ozonated water, causing the interior of the circulating line to circulate the ozonated water so that the flow rate may be constantly fixed at the outlet of the ozonated water producing unit, monitoring the ozone concentration of the ozonated water in the neighborhood of the outlet, adjusting the amount of an ozone gas supplied to the ozonated water producing unit based on the results of the monitoring, further monitoring the amount of the ozonated water used at the place for using the ozonated water, and controlling the amount of the ozonated water to be produced based on the results of this monitoring.

Method for supply of constant-concentration ozonated water

A functional water containing a fluorine-containing component obtained by electrolyzing an aqueous solution containing fluoride ion using electrodes having conductive diamonds, a method of producing the same, and a method and an apparatus of rinsing electronic parts using the functional water as a rinsing water. The fluorine-containing component produced by electrolyzing the fluoride ion using the conductive diamond, has stronger rinsing effect than that of a fluorine-containing component obtained by electrolyzing the fluoride ion itself before electrolysis or the fluoride ion using other electrodes. Therefore, an amount of hydrofluoric acid used can greatly be decreased.

Growing community of inventors

Hikari, Japan

Teruo Haibara