Sumitomo Electric Industries, Limited

Teruo Amoh

Kenjiro Higaki

Yasushi Tsuzuki

Sadamu Ishidu

Takashi Ishii

Hiroshi Fukuda

A semiconductor light-emitting element mounting member with an improved effective light reflectivity in a metal film serving as an electrode layer and/or a reflective layer, in which the metal layer has improved adhesion to a substrate, mechanical strength, and reliability and superior light-emitting characteristics. The semiconductor light-emitting element mounting member (a submount) is made by forming on a substrate metal films formed from Ag, Al, or an alloy containing these metals. The particle diameter of the crystal grains of the metal films is no more than 0.5 &#x3bc;m and the center-line average roughness Ra of the surface is no more than 0.1 &#x3bc;m. In a semiconductor light-emitting device, a semiconductor light-emitting element is mounted in the submount.

Semiconductor light emitting element mounting member, and semiconductor light emitting device employing it

A semiconductor-light-emitting-device-mounting member BL comprises (a) a highly heat-dissipative memberhaving a main surfaceon which connecting-use electrode layersandare provided to form a device-mounting areaand (b) a frame-shaped memberplaced on the main surfaceso as to surround the device-mounting area. The device-mounting areahas an area that is 1.05 to 4 times the area of a semiconductor light-emitting device LE. A light-emitting-diode-constituting member LEmounts a semiconductor light-emitting device LEon the device-mounting areaof the semiconductor-light-emitting-device-mounting member BL and has a fluorescent body and/or a protective resin LR filling the inside space of the frame-shaped member. A light-emitting diode LEmounts the light-emitting-diode-constituting member LEon a package

Semiconductor light-emitting device mounting member, light-emitting diode constituting member using same, and light-emitting diode using same

A submount that enables the reliable mounting of a semiconductor light-emitting device on it, and a semiconductor unit incorporating the submount. A submountcomprises (a) a substrate; and (b) a solder layerformed on the top surfaceof the substrate. The solder layerbefore melting has a surface roughness, Ra, of at most 0.18 &#x3bc;m. It is more desirable that the solder layerbefore melting have a surface roughness, Ra, of at most 0.15 &#x3bc;m, yet more desirably at most 0.10 &#x3bc;m. A semiconductor unitcomprises the submountand a laser diodemounted on the solder layerof the submount

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Itami, Japan

Teruo Amoh