Kabushiki Kaisha Toshiba

Tohoku University

Canon Kabushiki Kaisha

Tohoku Steel Co., Ltd.

Terunobu Miyazaki

Tadaomi Daibou

Shigemi Mizukami

Takahide Kubota

Eiji Kitagawa

Yushi Kato

Hiroaki Yoda

Tadashi Kai

Junichi Ito

Minoru Amano

Shinji Yuasa

Koji Ando

Akio Fukushima

Hitoshi Kubota

Takao Ochiai

Kay Yakushiji

Taro Nagahama

Daisuke Watanabe

Tatsuya Kishi

Toshihiko Nagase

Masatoshi Yoshikawa

Katsuya Nishiyama

Makoto Nagamine

Yasuo Ando

Mikihiko Oogane

Susumu Shinagawa

Qinli Ma

Atsushi Sugihara

Wu Feng

Minoru Takahashi

Yoshinobu Saitou

Yuudou Abe

A magnetoresistive element includes: a first ferromagnetic layer; a second ferromagnetic layer; and a first nonmagnetic layer disposed between the first ferromagnetic layer and the second ferromagnetic layer, the first ferromagnetic layer including (MnGa)Pt, the (MnGa)Pthaving a tetragonal crystal structure, where 45 atm %&#x2264;x&#x2264;75 atm %, 25 atm %&#x2264;y&#x2264;55 atm %, x+y=100 atm %, and 0 atm %&#x3c;z&#x2264;7 atm %.

Magnetoresistive element and magnetic memory

A magnetoresistive element according to an embodiment includes: a first magnetic layer; a second magnetic layer; a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; and a third magnetic layer disposed between the first magnetic layer and the first nonmagnetic layer, the first magnetic layer containing Mn and at least one of Ge, Ga, or Al, and the third magnetic layer containing MnVZ, where V represents vanadium, and Z represents at least one element of Al or Ga.

A magnetoresistive element according to an embodiment includes: a base layer; a first magnetic layer formed on the base layer, and including a first magnetic film having an axis of easy magnetization in a direction perpendicular to a film plane, the first magnetic film including MnGa(45&#x2266;x&#x3c;64 atomic %); a first nonmagnetic layer formed on the first magnetic layer; and a second magnetic layer formed on the first nonmagnetic layer, and including a second magnetic film having an axis of easy magnetization in a direction perpendicular to a film plane, the second magnetic film including MnGa(45&#x2266;y&#x3c;64 atomic %). The first and second magnetic layers include different Mn composition rates from each other, a magnetization direction of the first magnetic layer is changeable by a current flowing between the first magnetic layer and the second magnetic layer via the first nonmagnetic layer.

A magnetoresistive element according to an embodiment includes: a base layer; a first magnetic layer formed on the base layer and having a changeable magnetization direction with an easy axis of magnetization in a direction perpendicular to a film plane; a first nonmagnetic layer formed on the first magnetic layer; and a second magnetic layer formed on the first nonmagnetic layer and having a fixed magnetization layer with an easy axis of magnetization in a direction perpendicular to the film plane. The first magnetic layer includes a ferrimagnetic layer having a DOstructure or an L1structure, the ferrimagnetic layer has a c-axis oriented in a direction perpendicular to the film plane, and the magnetization direction of the first magnetic layer is changeable by a current flowing through the first magnetic layer, the first nonmagnetic layer, and the second magnetic layer.

The present invention relates to a magnetoresistive element including a first magnetic layer, a second magnetic layer, a first nonmagnetic layer, a third magnetic layer. The first magnetic layer includes a magnetic film of MnGe(77 atm %&#x2266;x&#x2266;82 atm %, 18 atm %&#x2266;y&#x2266;23 atm %, x+y=100 atm %). The first nonmagnetic layer is provided between the first magnetic layer and the second magnetic layer. The third magnetic layer is provided between the first magnetic layer and the first nonmagnetic layer or between the second magnetic layer and the first nonmagnetic layer, or is provided between the first magnetic layer and the first nonmagnetic layer and between the second magnetic layer and the first nonmagnetic layer. The third magnetic layer includes a Heusler alloy. The present invention also relates to a magnetic memory containing the magnetoresistive element.

A magnetoresistive element according to an embodiment includes a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, the first magnetic layer including a magnetic film of MnGe(77 atm %&#x2266;x&#x2266;82 atm %, 18 atm %&#x2266;y&#x2266;23 atm %, x+y=100 atm %).

A magnetoresistive element according to an embodiment includes a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, at least one of the first magnetic layer and the second magnetic layer including a magnetic film of MnAlGe(10 atm %&#x2266;x&#x2266;44 atm %, 10 atm %&#x2266;y&#x2266;65 atm %, 10 atm %&#x2266;z&#x2266;80 atm %, x+y+z=100 atm %).

A film type magnetic recording medium comprising as a magnetic recording layer an iron-cobalt-nickel-chromium magnetic alloy containing 10-51 wt. % cobalt, 1-30 wt. % nickel, 1-10 wt. % of chromium and 6 wt. % or less of at least one of the elements molybdenum, tungsten, vanadium, niobium, tantalum, copper, titanium and zirconium, high in durability and magnetic property, and moreover, capable of easily forming a magnetic alloy film thereon by vacuum deposition.

Film type magnetic recording medium

Growing community of inventors

Sendai, Japan

Terunobu Miyazaki