Seiko Epson Corporation

Terunao Hanaoka

Kenji Wada

Nobuaki Hashimoto

Haruki Ito

Yasunori Kurosawa

Kazushige Umetsu

Fumiaki Matsushima

Suguru Uchiyama

Yasuo Yamasaki

Akinori Shindo

Seiichi Chiba

Toshiyuki Enta

Shuji Kojima

Shuhei Yamada

Kunihiko Yano

Noriyuki Nakamura

Kazuhiko Nozawa

Keiji Kuwabara

In an electro-optical device, a mirror that is formed on an element substrate is sealed by a frame shaped spacer and a plate-like light-transmitting cover which is adhered to the spacer. An inorganic barrier layer is formed on an outer face of the spacer and a side face of the light-transmitting cover, and the boundary of the spacer and the light-transmitting cover is covered by the inorganic barrier layer.

Electro-optical device, manufacturing method thereof, and electronic apparatus

In an electro-optical device, a light-transmitting cover is disposed in mirrors, and when light is applied toward the mirrors through the light-transmitting cover, the temperature of the light-transmitting cover tires to increase due to the applied light. Here, in the electro-optical device, first metal portions that are in contact with the light-transmitting cover and the element substrate are formed. For this reason, it is possible to release the heat of the light-transmitting cover to a substrate through the first metal portions and the element substrate.

Electro-optical device, method of manufacturing electro-optical device, and electronic apparatus

In an electro-optical device, a mirror and the like which is formed on an element substrate is sealed using a sealing member. The sealing member is provided with a frame section and a cover section. In addition, the sealing member is provided on one face of the element substrate so that the mirror is surrounded by the element substrate and the sealing member and such that the mirror is positioned between a portion of the cover section and the element substrate. The sealing member is formed of a light-transmitting member having a frame section and a cover section which are integrally formed, and there is no interface between the frame section and the cover section.

An aspect of the invention is an electronic component including a semiconductor substratethat has an electrode pad, a first resin layerand a third resin layerthat are located above the semiconductor substrate, a second resin layerthat is formed such that at least portions of the second resin layer are located on the first resin layer and the third resin layer, a resin projectionthat includes the first to third resin layers and is higher than the first resin layer, and a wiring layerthat is electrically connected to the electrode pad and lies above the resin projection.

Electronic component and method for producing the same

In an electro-optical device, a mirror and the like which is formed on an element substrate is sealed using a sealing member. The sealing member is provided with a frame section and a coyer section. In addition, the sealing member is provided on one face of the element substrate so that the mirror is surrounded by the element substrate and the sealing member and such that the mirror is positioned between a portion of the cover section and the element substrate. The sealing member is formed of a light-transmitting member having a frame section and a cover section which are integrally formed, and there is no interface between the frame section and the cover section.

A method for manufacturing a spectroscopic sensor includes: (a) forming a light receiving element on a semiconductor substrate; (b) forming an angle restricting filter on the semiconductor substrate; and (c) forming a spectroscopic filter on the angle restricting filter. The step (c) of forming a spectroscopic filter includes: (c1) forming a first light transmitting film having a peripheral edge that overlaps a light blocking portion in plan view ox the semiconductor substrate by a lift-off method; and (c2) forming a second light transmitting film at a position spaced apart from the first light transmitting film in plan view of the semiconductor substrate by the lift-off method, the second light transmitting film having a peripheral edge that overlaps the light blocking portion in plan view of the semiconductor substrate.

Spectroscopic sensor and method for manufacturing same

An electronic component includes: a semiconductor element including a circuit; a vibration element; a first electrode arranged on a first surface of the semiconductor element and connected to the circuit and the vibration element arranged on the first surface side; a second electrode arranged on the first surface; a first wiring board including a first wire connected to the second electrode; and a second wiring board including a second wire to which the first wire is connected. At least a part of an inner side region of an outer contour of the vibration element is arranged to overlap the second electrode in plan view facing the first surface.

Electronic component, electronic device, and method of manufacturing the electronic component

A sensor device includes a first electrode disposed on active surface side of a silicon substrate, an external connecting terminal electrically connected to the first electrode, at least one stress relaxation layer disposed between the silicon substrate and the external connecting terminal, a connecting terminal disposed on the active surface side of the silicon substrate, and a vibration gyro element having weight sections as mass adjustment sections, the vibration gyro element is held by the silicon substrate due to connection between the connection electrode and the external connecting terminal, and a meltage protection layer formed in an area where the stress relaxation layer and the mass adjustment section overlap each other in a plan view is provided.

Sensor device, motion sensor, and electronic device

A semiconductor device includes: a semiconductor substrate that has an integrated circuit and an electrode, the electrode being electrically coupled to the integrated circuit; a resin layer that is formed on the semiconductor substrate, the resin layer having an upper surface and a lower surface, the upper surface and the lower surface opposing each other, the lower surface facing the substrate; and a spiral inductor that is formed on the upper surface of the resin layer with a spiral wiring line, the spiral inductor being electrically coupled to the electrode. The wiring line has both ends in a width direction intersecting an axial line spirally extending and a mid-portion between the both ends. At least a part of the mid-portion makes contact with the upper surface of the resin layer, and at least the both ends are positioned apart from the upper surface of the resin layer.

Semiconductor device

A method for manufacturing a semiconductor device, includes: preparing a semiconductor module including: a semiconductor substrate having an electrode; a test pad electrically connected to the electrode; a land electrically connected to the test pad; and an external terminal provided on the land; and testing an electrical characteristic by bringing a probe into contact with the test pad.

Semiconductor device and method for manufacturing the same

A semiconductor device includes: a semiconductor substrate having an integrated circuit formed thereon and an electrode electrically coupled to the integrated circuit; a passivation film formed on a surface of the semiconductor substrate, the surface having the electrode formed thereon; a first metal layer formed so as to come into contact with the passivation film; a resin layer formed on the first metal layer; a wiring formed so as to be electrically coupled to the electrode and reach an upper surface of the resin layer; and a second metal layer formed so as to be in contact with the first metal layer and reach the upper surface of the resin layer.

A semiconductor device includes: a semiconductor substrate; an insulation layer which is disposed on the semiconductor substrate and includes a groove formed on a second surface of the insulation layer, opposite from a first surface of the insulation layer facing the semiconductor substrate; and a conductive part disposed on the insulation layer; wherein the conductive part has a wiring part formed in a manner that the wiring part comes in contact with a bottom surface and a side surface of the groove.

The semiconductor device includes the following: a semiconductor chip, in which an integrated circuit is formed, having a polygon surface, and a plurality of electrodes thereon, that is electrically connected to the integrated circuit, is installed on the polygon surface; a first resin layer formed over the polygon surface of the semiconductor chip; a wiring that includes a first part and a second part that are located on the first resin layer; an external terminal installed on the first part of the wiring; and a second resin layer formed over each of the first resin layers so as to cover the second part of the wiring. The plurality of electrodes is disposed along remaining second sides, excluding at least one of the first sides of the polygon surface, and the second resin layer is formed to avoid the area between a side edge located on the side of the first side of the first resin layer and the first side.

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Suwa, Japan

Terunao Hanaoka