Sony Corporation

Nippon Telegraph and Telephone Corporation

Sony Group Corporation

Terukazu Ohno

Hideki Mori

Hirokazu Ejiri

Kenji Azami

Nobuyuki Yoshitake

Shinji Nakamura

Shuichi Oka

Tadao Takeda

Toshiaki Tsuchiya

Sadao Nakashima

Tetsushi Sakai

Yuichi Kado

Takemi Ueki

By stably separating a melting location of a fuse () from conductive layers (A,B), reliable melting of the fuse () is enabled. A fuse () including a fuse body (A) and two pads (Ba,Bb) connected by this and two conductive layers (A,B) individually connected to the two pads (Ba,Bb) are formed in a multilayer structure on a semiconductor substrate (). A length of the fuse body (A) is defined so that the melting location of the fuse () becomes positioned in the fuse body (A) away from the region overlapped on the conductive layer (A orB) when an electrical stress is applied between two conductive layers (A,B) and the fuse () is melted.

Semiconductor device

An object is to provide a film bulk acoustic resonator capable of improving resonant characteristics by reducing the generation of a standing wave to be caused by a transverse-mode acoustic wave to a minimum. In a film bulk acoustic resonator including a resonant portion A having a piezoelectric material layersandwiched between a first electrodeand a second electrode, the resonant portion A is configured to have a planar shape that is an ellipse having a part thereof cut off along a straight line L. The straight line L intersects at least one of a minor axis and a major axis of the ellipse, and preferably intersects both the minor axis and the major axis, and passes through the center of the ellipse.

Film bulk acoustic resonator shaped as an ellipse with a part cut off

A method of manufacturing an SOI substrate uses an SOI substrate having a first single-crystal silicon layer, an insulating layer formed on the first single-crystal silicon layer, and a second single-crystal silicon layer formed on the insulating layer. The surface of the second single-crystal silicon layer is thermally oxidized. The second single-crystal silicon layer is controlled to have a predetermined thickness by removing the thermally oxidized surface. This step controlling the second single-crystal silicon layer to have a predetermined thickness includes the step of eliminating, by annealing, a stacking fault formed by the thermal oxidation.

Method of manufacturing SOI substrate

Growing community of inventors

Kanagawa, Japan

Terukazu Ohno