Jsr Corporation

Nissan Motor Company Limited

Musashi Energy Solutions Co., Ltd.

Terukazu Kokubo

Koji Sumiya

Yasuyuki Koga

Nobuo Ando

Masaya Naoi

Shigehito Asano

Koji Seno

Hideaki Horie

Kazuo Inoue

Yuki Kusachi

Yusuke Nakashima

Atsushi Shiota

Tomohiro Kaburagi

Tatsuya Yamanaka

Masahiro Akiyama

Manabu Sekiguchi

Naofumi Shoji

Noboru Yamauchi

Hajime Tsuchiya

Kazuya Tsuchida

Hiromi Egawa

Naoki Yanadori

Shotaro Doi

Hisashi Nakagawa

Takahiko Kurosawa

Tsuyoshi Furukawa

Kazunari Aita

Hiroki Yakushiji

Yukihiro Kawada

Ryoji Setaka

Masaki Obi

Seitaro Hattori

Youhei Nobe

Taichi Matsumoto

Takeo Hara

Michihiro Mita

Chiaki Miyamoto

Kentaro Tamaki

Seitarou Hattori

Ryo Kimura

Tsutomu Reiba

A predoping method for a negative electrode active material to dope the negative electrode active material with lithium ions using an electrolyte solution that includes lithium ions. The electrolyte solution includes at least one type of additive having a reduction potential higher than a reduction potential of a solvent contained in the electrolyte solution.

Predoping method for negative electrode active material, manufacturing method for negative electrode, and manufacturing method for power storage device

A predoping method for a negative electrode active material to dope the negative electrode active material with lithium ions. The predoping method for a negative electrode active material includes: a predoping process and a post-doping modification process. In the predoping process, the negative electrode active material is doped with lithium ions, to thereby reduce a potential of the negative electrode active material relative to lithium metal. In the post-doping modification process, after the predoping process, reaction is caused between a reactive compound that is reactive with lithium ions and lithium ions doped into the negative electrode active material, to thereby increase the potential of the negative electrode active material relative to lithium metal. The potential of the negative electrode active material relative to lithium metal is 0.8 V or more at completion of the post-doping modification process.

Provided is a doping system in which an active material in a strip-shaped electrode precursor having a layer including an active material is doped with alkali metal. The doping system includes a doping tank, a conveying unit, a counter electrode unit, a connection unit, and a porous insulating member. The doping tank accommodates a solution including alkali metal ions. The conveying unit conveys the electrode precursor along a path passing through the inside of the doping tank. The counter electrode unit is accommodated in the doping tank. The connection unit electrically connects the electrode precursor and the counter electrode unit. The porous insulating member is disposed between the electrode precursor and the counter electrode unit, and is not in contact with the electrode precursor.

Doping system, and method for manufacturing electrodes, batteries and capacitors

Provided is a method for manufacturing an electrode material having a pressing step in which an irregularly shaped aggregate containing at least an active material is statically pressed in the presence of an alkali metal source and a solvent.

Method for manufacturing electrode material, cell, and capacitor; and device for manufacturing electrode material

A method of forming a trench isolation, comprising the steps of:

Method of forming a trench isolation

A method of forming an organic silica-based film, including: applying a composition for forming an insulating film for a semiconductor device, which is cured by using heat and ultraviolet radiation, to a substrate to form a coating; heating the coating; and applying heat and ultraviolet radiation to the coating to effect a curing treatment, wherein the composition includes organic silica sol having a carbon content of 11.8 to 16.7 mol %, and an organic solvent, the organic silica sol being a hydrolysis-condensation product produced by hydrolysis and condensation of a silane compound selected from compounds shown by the general formulae (1): RSi(OR), (2): Si(OR), (3): (R)Si(OR), and (4): R(RO)Si&#x2014;(R)&#x2014;Si(OR)R.

Organic silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device

An insulating-film-forming composition for a semiconductor device comprising an organic silica sol with a carbon atom content of 11 to 17 atom % and an organic solvent is disclosed. The organic silica sol comprises a hydrolysis-condensation product P1 and a hydrolysis-condensation product P2. The hydrolysis-condensation product P1 is obtained by hydrolyzing and condensing (A) a silane monomer comprising a hydrolyzable group and (B) a polycarbosilane comprising a hydrolyzable group in the presence of (C) a basic catalyst, and the hydrolysis-condensation product P2 is obtained by hydrolyzing and condensing (D) a silane monomer comprising a hydrolyzable group.

Organic silica film and method for forming same, composition for forming insulating film of semiconductor device and method for producing same, wiring structure and semiconductor device

A laminate including: a first silica-based film; a second silica-based film; and an organic film, wherein the second silica-based film includes an organic group containing a carbon-carbon double bond or a carbon-carbon triple bond. A method of forming the laminate includes: forming a first coating for a first silica-based film on a substrate; forming a second coating for a second silica-based film on the first coating, the second coating including an organic group containing a carbon-carbon double bond or a carbon-carbon triple bond; forming a third coating for an organic film on the second coating; and curing a multilayer film including the first to third coatings.

Laminate and method of forming the same, insulating film, and semiconductor device

An anisotropically conductive connector, by which positioning, and holding and fixing to a wafer to be inspected can be conducted with ease even when the wafer has a large area, contains a frame plate having a plurality of anisotropically conductive film-arranging holes formed corresponding to regions of electrodes to be inspected of a wafer, and a plurality of elastic anisotropically conductive films arranged in the respective anisotropically conductive film-arranging holes and supported by the inner peripheral edge thereabout.

Anisotropically conductive connector and production process thereof, and probe member

Disclosed herein are an anisotropically conductive connector, by which positioning, and holding and fixing to a wafer can be conducted with ease even when the wafer has a large area of 8 inches or greater in diameter, and the pitch of electrodes to be inspected is small, and good conductivity is retained even upon repeated use, and applications thereof. The anisotropically conductive connector has a frame plate, in which a plurality of anisotropically conductive film-arranging holes have been formed correspondingly to electrode regions in all or part of integrated circuits on a wafer, and a plurality of elastic anisotropically conductive films arranged in the respective anisotropically conductive film-arranging holes. The elastic anisotropically conductive films each have a plurality of conductive parts for connection extending in a thickness-wise direction thereof and containing conductive particles, and an insulating part mutually insulating them. The conductive particles are obtained by coating core particles exhibiting magnetism with a high-conductive metal, a proportion of the high-conductive metal to the core particles is at least 15% by mass, and the following t is at least 50 nm: t=[1/(Sw&#xb7;&#x3c1;)]&#xd7;[N/(1&#x2212;N)], wherein Sw is a BET specific surface area (m/kg) of the core particles, &#x3c1; is a specific gravity (kg/m) of the high-conductive metal, and N is (mass of the high-conductive metal/total mass of the conductive particles).

Anisotropic conductivity connector, conductive paste composition, probe member, and wafer inspection device, and wafer inspecting method

Anisotropically conductive connector, its manufacture method and probe member

Disclosed are provides conductive metal particles and conductive composite metal particles by which conductive materials having stable conductivity can be provided, and applied product thereof. The conductive metal particles have a number average particle diameter of 5 to 100 &#x3bc;m, a BET specific surface area of 0.01&#xd7;10to 0.7&#xd7;10m/kg, a sulfur element content of at most 0.1% by mass, an oxygen element content of at most 0.5% by mass and a carbon element content of at most 0.1% by mass. The conductive composite metal particles are obtained by coating the surfaces of the conductive metal particles with a high-conductive metal.

Conductive metal particles, conductive composite metal particles and applied products using the same

Disclosed are provides conductive metal particles and conductive composite metal particles by which conductive materials having stable conductivity can be provided, and applied product thereof. The conductive metal particles have a number average particle diameter of 5 to 100 &mgr;m, a BET specific surface area of 0.01&times;10 to 0.7&times;10 m /kg, a sulfur element content of at most 0.1% by mass, an oxygen element content of at most 0.5% by mass and a carbon element content of at most 0.1% by mass. The conductive composite metal particles are obtained by coating the surfaces of the conductive metal particles with a high-conductive metal.

Growing community of inventors

Tokyo, Japan

Terukazu Kokubo