Fuji Photo Film Company, Limited

Fujifilm Corporation

Teruhiko Kuramachi

Kazuhiko Nagano

Yoji Okazaki

Fusao Yamanaka

Eiji Suzuki

Jiro Tsukahara

Satoshi Mino

Takeshi Senga

Tomoo Murakami

Takashi Yoshida

A silicon-nitrogen compound film according to the first aspect of the present invention is made of a material expressed by a compositional formula SiNOH, where 10&#x2266;(3x+2y)&#x2266;12, 3.4&#x2266;x&#x2266;4.0, 0&#x2266;y, 0&#x2266;z&#x3c;2.0, the peak-area ratio of a first area of a first peak appearing near a wave number of 2150 cmin a Fourier-transform infrared absorption spectrum of the material and corresponding to a Si&#x2014;H stretching vibration to a second area of a second peak appearing near a wave number of 810 cmin the Fourier-transform infrared absorption spectrum and corresponding to a Si&#x2014;N stretching vibration is smaller than 0.2, and the silicon-nitrogen compound film has a thickness t (in nanometers) and a density d (g/cm) which satisfy the inequalities,1.9&#x2266;d&#x2266;2.5, and&#x2212;700d+1930&#x2266;6t&#x2266;&#x2212;700d+2530.

Silicon-nitrogen compound film, and gas-barrier film and thin-film device using the silicon-nitrogen compound film

A laser apparatus includes: a plurality of laser diodes respectively having light-emission points and being fixed to a block so that the light-emission points are aligned along a direction; and a collimator-lens array integrally formed to contain a plurality of collimator lenses which are arranged along a direction and respectively collimate laser beams emitted from the plurality of laser diodes. The block has a lens-setting surface which is flat, perpendicular to optical axes of the plurality of laser diodes, and located on the forward side of the plurality of laser diodes at a predetermined distance from the light-emission points, and the collimator-lens array is fixed to the block so that an end surface of the collimator-lens array is in contact with the lens-setting surface.

Laser apparatus in which laser diodes and corresponding collimator lenses are fixed to block, and fiber module in which laser apparatus is coupled to optical fiber

In a laser module comprising a hermetically sealed container having inside a semiconductor laser device whose emission wavelength is 350&#x2dc;450 nm, generation of organic volatile gas is suppressed in the container and life of the module is prolonged. In a laser module comprising a hermetically sealed container having inside a semiconductor laser device whose emission wavelength is 350&#x2dc;450 nm, optical components whose organic volatile gas generation measured by GC/MS is 10 &#x3bc;g/g or less at 150&#xb0; C. are positioned in the container. In addition, as an organic adhesive to fix the optical components such as a collimating lens is used an organic adhesive whose organic volatile gas generation measured by GC/MS is 100 &#x3bc;g/g or less at 150&#xb0; C.

Laser module

A laser module includes a semiconductor laser that emits laser light within a wavelength range of 350 to 450 nm, and hermetically sealing members, in which the semiconductor is sealed. The amount of organic adhesive utilized within the volume of the sealed sealing members is 1.0 g/ml or less, thereby causing a saturation concentration of outgas components generated from the adhesive to be less than 1000 ppm following a deaerating process. At least one optical component (e.g., a collimating lens) is adhesively fixed to a fixing member (e.g., a collimating lens holder) by inserting an adhesive composition including an alicyclic epoxy compound, a compound having an oxytanyl group, and a catalytic amount of an onium salt photoreaction initiator therebetween at an adhesive thickness of 0.05 &#x3bc;m or greater and 5 &#x3bc;m or less. Thereafter, the adhesive composition is cured by an activated energy beam to fix the optical component to the fixing member.

Laser module and method of manufacture thereof

In a laser module comprising a hermetically sealed container having inside a semiconductor laser device whose emission wavelength is 350&#x2dc;450 nm, generation of organic volatile gas is suppressed in the container and life of the module is prolonged. In a laser module comprising a hermetically sealed container having inside a semiconductor laser device whose emission wavelength is 350&#x2dc;450 nm and whose life is 5500 hours or more, optical components whose organic volatile gas generation measured by GC/MS is 10 &#x3bc;g/g or less at 150&#xb0; C. are positioned in the container. In addition, as an organic adhesive to fix the optical components such as a collimating lens is used an organic adhesive whose organic volatile gas generation measured by GC/MS is 300 &#x3bc;g/g or less at 15&#xb0; C.

A package base for a semiconductor element is made of a carbon composite material. The mounting surface of the package base includes a first area on which at least one first element including at least one semiconductor element is to be mounted, and a second area on which at least one second element including at least a terminal for electrode wiring is to be mounted. Preferably, the carbon composite material is a high-density, isotropic carbon-fiber composite material. In addition, the mounting surface may have a step change in surface elevation for alignment of either of the at least one first element and the at least one second element.

Packages base which allows mounting of a semiconductor element and electrode-wiring terminals on a mounting surface

In a method for producing a laser element, a brazing material is placed between a nitride-based semiconductor laser bar and a fixation surface of a heat sink, where the brazing material contains gold and one of tin and silicon as main components, the nitride-based semiconductor laser bar has at least three light-emission points formed on a substrate, the heat sink is made of copper or copper alloy, and the fixation surface has a predetermined shape. Then, the nitride-based semiconductor laser bar is fixed to the fixation surface of the heat sink by melting and solidifying the brazing material while pressing the nitride-based semiconductor laser bar toward the heat sink with a tool having a shape corresponding to the predetermined shape of the fixation surface.

Laser element, method of producing the laser element, and a laser module employing the laser element

In a disclosed laser module, a usage amount of organic adhesive is set to no more than 1.0 g/ml. Thus, an equilibrium density of outgas components from the adhesive after an air removal treatment is less than 1000 ppm. In another laser module, a heat sink at which a semiconductor laser element is adhered on a submount, an electrode terminal wire-connected with the laser element, a photodiode wire-connected with the electrode terminal, and a zeolite adsorbent are fixedly provided on a stem. These are ring-welded in a container in a dry air atmosphere (80% nitrogen, 20% oxygen). In still another laser module, sixteen multiplexed lasers are disposed in a container. The container is connected with an air circulation apparatus, which is provided with a filter for removing contaminants, a rotary pump for circulating inert gas, and a valve for controlling replenishment of the gas.

Laser module and production process thereof

In a laser apparatus, a plurality of semiconductor laser elements respectively emit laser beams; a multimode optical fiber has a light-entrance end and a light-emission end; an optical condensing system collects the laser beams emitted from the plurality of semiconductor laser elements, and couples the collected laser beams to the light-entrance end of the multimode optical fiber; and a protection member is arranged at the light-emission end of the multimode optical fiber, protects the light-emission end from the atmosphere, and has a light-emission window located at at least a predetermined distance from the light-emission end.

Laser apparatus having protection member at light-emission end of multimode optical fiber

In a laser-light source: submounts each being made of a material having a thermal expansion coefficient of 3.5 to 6.0&#xd7;10/&#xb0; C. and having a thickness of 200 to 400 micrometers are separately formed on a heat-dissipation block made of copper or copper alloy; a single-cavity nitride-based semiconductor laser chips are respectively mounted junction-side-down on the corresponding submounts; an optical condenser system collects laser beams emitted from the semiconductor laser chips, and couples the collected laser beams to a multimode optical fiber. A bonding surface of each semiconductor laser chip is bonded to a bonding surface of a corresponding submount through a metalization layer and an Au&#x2014;Sn eutectic solder layer each of which is divided into areas.

Multiplex laser-light source and exposure system

A plurality of multi-cavity laser diode chips, each having a plurality of light emitting points, are fixed side by side and form a laser diode array.

Laser diode array, laser device, wave-coupling laser source, and exposure device

On a heat sink having a low thermal resistance, an Ni thin film layer is formed at a film thickness of 2 &mgr;m to 6 &mgr;m. On the face to which a semiconductor light emitting element is to be bonded and the face on the side from which light is to be emitted, a barrier metallic layer is formed at a film thickness of 50 nm to 150 nm in the region as wide as four times the area of the bonding face of the semiconductor light emitting element. A wettability improving metallic layer is formed at a film thickness of 50 nm to 150 nm. The semiconductor light emitting element stacks layers of AlGaAs, GaAs, GaAsP, and InGaAs, all on a GaAs substrate. An N electrode includes AuGe/Ni/Au , and a P electrode includes Au/Pt/Ti/Pt/Ti and is pressed and soldered against the bonding face of the heat sink.

Growing community of inventors

Kaisei-machi, Japan

Teruhiko Kuramachi