Mitsubishi Denki Kabushiki Kaisha

Mitsubishi Electric Corporation

Nippon Shokubai Co., Ltd.

Renesas Electronics Corporation

Mitsubishi Heavy Industries Limited

Renesas Technology Corp.

Teruhiko Kumada

Hideharu Nobutoki

Naoki Yasuda

Yasuhiro Yoshida

Yoshinori Yamamoto

Tetsuya Yamamoto

Reiji Morioka

Hiroyuki Osuga

Hiroshi Koezuka

Toshiyuki Toyoshima

Hideo Horibe

Takuya Kamiyama

Shigeru Kubota

Youko Tanaka

Toshiaki Yoshikawa

Masazumi Matsuura

Tsuyoshi Ozaki

Suguru Nagae

Sohei Samejima

Kinya Goto

Atsuko Fujino

Shigeru Utsumi

Sadao Sato

Takeo Ishibashi

Hidetomo Nakagawa

Junjiro Sakai

Yasutaka Nakatani

Tetsuro Hanawa

Toshihiko Nishimori

Tadashi Shimazu

Hidetaka Kafuku

Yoshinori Tanikawa

Yoshiharu Ono

Kazuyuki Maetoko

Tsukasa Takagi

Koji Tange

Kimihiro Kaneko

Atsuko Sasahara

Hitoshi Fukuma

Atsushi Oshida

Muneo Murakami

Souhei Samejima

Shinya Shibata

Toshihito Fujiwara

A coating composition having high dirt prevention properties and improved adhesiveness to hydrophobic surfaces such as those made of a plastic, and a coating method are provided. More specifically, provided is a coating composition, including: hydrophobic resin particles dispersed in an aqueous medium; hydrophilic inorganic fine particles; and an oxidizing agent containing at least one of a peroxide, a perchloric acid, a chlorate, a persulfuric acid, a superphosphoric acid, and a periodate, and also provided is a coating method including the steps of: preparing a first agent having hydrophilic inorganic fine particles and hydrophobic resin particles dispersed in an aqueous medium; preparing a second agent by adding, to the first agent, an oxidizing agent containing at least one of a peroxide, a perchloric acid, a chlorate, a persulfuric acid, a superphosphoric acid, and a periodate; applying the second agent onto a member to be coated; and drying the second agent on the member to be coated.

Coating composition, coating method, air conditioner, ventilation fan, and electrical equipment

A method of manufacturing a printed wiring board () includes the steps of: forming a core including carbon fiber reinforced plastic having a primary through hole (); forming a first adhesive member () on a lower surface of the core to cover the primary through hole (); charging an insulating member into the primary through hole (); forming a second adhesive member () on an upper surface of the core; forming a third adhesive member () below the first adhesive member (); forming a fourth adhesive member () on the second adhesive member (); and forming interconnections on the core.

Method of manufacturing printed wiring board

A composition for chemical vapor deposition film-formation comprising a borazine compound represented by the Chemical Formula 1 satisfying at least one of a condition that content of each halogen atom in the composition is 100 ppb or less or a condition that content of each metal element in the composition is 100 ppb or less. In the Chemical Formula 1, Rmay be the same or different, and is hydrogen atom, alkyl group, alkenyl group or alkynyl group, and at least one thereof is hydrogen atom; Rmay be the same or different, and is hydrogen atom, alkyl group, alkenyl group or alkynyl group, and at least one thereof is alkyl group, alkenyl group or alkynyl group. 

Composition for chemical vapor deposition film-formation and method for production of low dielectric constant film

A coating composition including ultrafine silica particles having an average particle diameter of 15 nm or less and fluororesin particles, in which ultrafine silica particle content is 0.1 to 5 mass %, and the mass ratio of the ultrafine silica particles to the fluororesin particles is 70:30 to 95:5. According to the coating composition, there is provided a coating film which makes it possible to readily coat the surfaces of various articles without impairing the color tone and the texture and which is excellent in antisoiling performance and durability.

Coating composition, and its production, heat exchanger and air conditioner

A low dielectric constant material having an excellent water resistance obtained by heat-treating a borazine compound of the formula (1-2): or an inorganic or organic compound having a group derived from the borazine compound (1-2) to undergo a condensation reaction, thereby producing an oligomer or polymer, wherein Rto Rare independently a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, an aryl group, a substituted aryl group, an alkenyl group, an amino group, an alkylamino group, an alkoxyl group, a thioalkoxyl group, a carbonyl group, a silyl group, an alkylsilyl group, a phosphino group, an alkylphosphino group, or a group of the formula: Si(OR)(OR)(OR), and at least one of Rto Ris not hydrogen atom.

Source material for preparing low dielectric constant material

A coating composition according to the present invention includes silica microparticles and fluorine resin particles. The coating film formed on a surface of an article includes a silica film composed of the silica microparticles, in which the fluorine resin particles are dotted so as to partially expose from a surface of the silica film, an exposed area of the silica film is larger than an exposed area of the fluorine resin particles, and amount of natrium contained in the coating composition is made equal to or less than 0.5% in a ratio by weight to contained amount of the silica microparticles.

Coating composition, heat exchanger, and air-conditioner

A plasma CVD apparatus including a reaction chamber including an inlet for supplying a compound including a borazine skeleton, a feeding electrode, arranged within the reaction chamber, for supporting a substrate and being applied with a negative charge, and a plasma generating mechanism, arranged opposite to the feeding electrode via the substrate, for generating a plasma within the reaction chamber. A method forms a thin film wherein a thin film is formed by using a compound including a borazine skeleton as a raw material, and a semiconductor device includes a thin film formed by such a method as an insulating film. The apparatus and method enable to produce a thin film wherein low dielectric constant and high mechanical strength are stably maintained for a long time and insulating characteristics are secured.

Plasma CVD apparatus, method for forming thin film and semiconductor device

An object is to provide an insulating film for a semiconductor device which has characteristics of a low permittivity, a low leakage current, and a high mechanical strength, undergoes less change in these characteristics with the elapse of time, and has an excellent water resistance, as well as to provide a process and an apparatus for producing the insulating film for a semiconductor device, a semiconductor device, and a process for producing the semiconductor device. A gas containing a raw material gas which gasified a predetermined alkylborazine compound is supplied in a chamber (); an electromagnetic wave is introduced into the chamber () using with an inductive coupling type plasma generation mechanism () to convert the gas into a plasma; a substrate () is placed in a plasma diffusion region of the plasma; gas-phase polymerization is performed with borazine skeletal molecules, as a fundamental unit, dissociated from the alkylborazine compound by the plasma so as to form the insulating film for semiconductor devices on the substrate ().

Insulating film for semiconductor device, process and apparatus for producing insulating film for semiconductor device, semiconductor device, and process for producing the semiconductor device

An object of the invention is to provide a printed circuit board that has an excellent heat dissipation performance and excellent reliability, and its manufacturing method. The printed circuit board includes: prepregs () and () being cured after each covering the surfaces of a metal plate () provided with first throughholes () therein and the inner walls of the first throughholes (); prepregs () and () being cured after glass clothes () and () are sandwiched between the prepregs () and (), and the prepregs () and (), respectively; and second throughholes () that connect wiring layers () and (), and () and () provided on both surfaces of prepregs () and (), respectively. The prepregs () and () and the prepregs () and () are characterized in that they contain inorganic filler. Furthermore, the prepregs () and () and the prepregs () and () may contain elastomer.

Printed circuit board and method of manufacturing the same

A CFRP core including a CFRP layer has a primary through hole. An adhesive member coats a wall surface of the primary through hole, and has a secondary through hole extending within the primary through hole. An electrically conductive layer is formed on a wall surface of the secondary through hole for electrically connecting upper and lower signal interconnections via the secondary through hole. A coating layer coats an outer peripheral edge of the CFRP core as seen in a plan view. Thereby, a printed interconnection board with low thermal expansivity and high thermal conductivity capable of preventing exfoliation of a CFRP layer on a side surface of a substrate using CFRP as a core, as well as preventing falling-off of carbon powders from the CFRP layer, and a method of manufacturing the same can be obtained.

Printed interconnection board having a core including carbon fiber reinforced plastic

The present invention relates to a radome which has excellent transmission loss of radio waves and structural strength, which can be easily produced, and which has favorable workability, and a method of producing the same. The radome includes an olefin woven material and a glass cloth, in which the olefin woven material and the glass cloth are impregnated with a matrix resin to be integrated with each other, and the glass cloth is disposed closer to an inner side of the radome than the olefin woven material. As the olefin woven material, a woven material formed of an ultrahigh molecular weight polyethylene fiber can be used. As the matrix resin, an epoxy resin, a vinyl ester resin, an unsaturated polyester resin, or a silicone resin can be used.

Radome and method of producing the same

There is provided a semiconductor device and method of fabricating the same that employs an insulation film of a borazine-based compound to provided enhanced contact between a material for insulation and that for interconnection, increased mechanical strength, and other improved characteristics. The semiconductor device includes a first insulation layer having a recess with a first conductor layer buried therein, an etching stopper layer formed on the first insulation layer, a second insulation layer formed on the etching stopper layer, a third insulation layer formed on the second insulation layer, and a second conductor layer buried in a recess of the second and third insulation layers. The second and third insulation layers are grown by chemical vapor deposition with a carbon-containing borazine compound used as a source material and the third insulation layer is smaller in carbon content than the second insulation layer.

Semiconductor device and method of fabricating the same

A low dielectric material is produced by using a composition including a borazine ring-containing compound and a compound represented by the following formula as a solvent, and/or by annealing a composition comprising a borazine ring-containing compound under atmosphere of oxygen concentration not higher than 0.1 vol % at 200 to 600&#xb0; C. In the following formula, Rand Rindependently represent alkyl group or acyl group; Rrepresents hydrogen atom or alkyl group; and n represents an integer of 1 to 5. 

Composition for low dielectric material, low dielectric material and method for production thereof

A via-filling material includes a polymer containing a repeating unit represented bywherein Rone of hydrogen, fluorine, chlorine, bromine, and methyl group; Ris one of hydrogen, a Calkyl group, and a Calkyl group in which the hydrogen is replaced by at least one of fluorine, chlorine, and bromine; and X is &#x2014;C(&#x2550;O)O&#x2014; or &#x2014;S(&#x2550;O)O&#x2014;. This via-filling material does not generate deposits around an opening of a via hole during plasma etching and provides a semiconductor integrated circuit with high reliability, even when a trench wider than the via hole is formed by plasma etching around the via hole filled with the via-filling material.

Via-filling material and process for fabricating semiconductor integrated circuit using the material

Growing community of inventors

Tokyo, Japan

Teruhiko Kumada