Hitachi, Ltd.

Terue Tsunoda

Seiki Harada

Atsushi Saiki

Yoichi Oba

Kikuji Sato

An insulating film provided on the surface of a semiconductor device having a protective film of silicon dioxide is composed of a double layer. The double layer consists of a thin film which is disposed on at least a part of the protective film of silicon dioxide and which is made of an organic compound containing either an amino group as well as an alkoxysilane group or an epoxy group as well as an alkoxysilane group, and a film which is disposed so as to cover the thin film of an organic compound and which is made of a heat-resisting polymer resin. The heat-resisting polymer is the reaction product of 4,4'-diamino-diphenylether, 4,4'-diamino-diphenyl ether-3-carbonyl amide, and pyromellitic acid dianhydride.

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Tokyo, Japan

Terue Tsunoda