Sharp Kabushiki Kaisha Corporation

Teruaki Higo

Toshihiko Sakai

Kazuya Tsujino

Liumin Zou

Masamichi Kobayashi

Makoto Higashikawa

Chikao Okamoto

Yuta Matsumoto

Takeshi Mori

Naoki Asano

Rihito Suganuma

Natsuko Fujiwara

Masahito Ishii

A photovoltaic device includes: a p- or n-type semiconductor substrate; a p-type amorphous semiconductor film and an n-type amorphous semiconductor film on a first-face side; p-electrodes on the p-type amorphous semiconductor film; and n-electrodes on the n-type amorphous semiconductor film, wherein: the p-electrodes and the n-electrodes are arranged at intervals; the p-type amorphous semiconductor film surrounds the n-type amorphous semiconductor film in an in-plane direction of the semiconductor substrate; the n-type amorphous semiconductor film has an edge portion providing an overlapping region where the n-type amorphous semiconductor film overlaps the p-type amorphous semiconductor film; and the n-electrodes are disposed in areas of the n-type amorphous semiconductor film that are surrounded by the overlapping region.

Photovoltaic device and photovoltaic unit

A photovoltaic device includes: a semiconductor substrate stretching in a first direction and a second direction that intersects the first direction; and a first amorphous semiconductor film and a second amorphous semiconductor film both provided on the semiconductor substrate. The second amorphous semiconductor film has a differ conductivity type from the first amorphous semiconductor film. The first amorphous semiconductor film and the second amorphous semiconductor film are divided into a plurality of sections in the first direction and the second direction.

Photovoltaic devices and photovoltaic modules

The n-type amorphous semiconductor layersare on parts of that one of the faces of the semiconductor substrate, there being provided no p-type amorphous semiconductor layersin the parts. The electrodesare disposed on the n-type amorphous semiconductor layers. The electrodesare disposed on the p-type amorphous semiconductor layers. The p-type amorphous semiconductor layersbetween those n-type amorphous semiconductor layerswhich are adjacent along an in-plane direction of the semiconductor substrateinclude, arranged along a first direction that points from the n-type amorphous semiconductor layerstoward the adjacent n-type amorphous semiconductor layers: first and second electrode-provided regions where the electrodesare disposed; and a no-electrode-provided region, between the first and second electrode-provided regions, where there are provided no electrodes

Photovoltaic device

A photovoltaic device () includes: a p-type diffusion region () and an n-type diffusion region () on the backside of a semiconductor substrate (); electrodes (); and a wiring board (). The electrodes () are disposed on the p-type diffusion region (), and the electrodes () are disposed on the n-type diffusion region (). The wiring board () includes a wire group () connected to the electrodes () by conductive adhesion layers () and a wire group () connected to the electrodes () by conductive adhesion layers (). The photovoltaic device () includes at least one of a first structure in which a plurality of electrodes () includes at least a pair of adjacent electrodes connected to a single wire and a second structure in which a plurality of electrodes () includes at least a pair of adjacent electrodes connected to a single wire.

Photovoltaic device and solar cell string including photovoltaic devices

A photovoltaic device includes: a semiconductor substrate stretching in a first direction and a second direction that intersects the first direction; and a first amorphous semiconductor film and a second amorphous semiconductor film both provided on the semiconductor substrate. The second amorphous semiconductor film has a differ conductivity type from the first amorphous semiconductor film. The first amorphous semiconductor film and the second amorphous semiconductor film are divided into a plurality of sections in the first direction and the second direction. Therefore, the photovoltaic device has an improved heat resistance.

A photovoltaic conversion device () includes a semiconductor substrate (), a passivation film (), n-type amorphous semiconductor strips, p-type amorphous semiconductor strips (), and electrodes (). The passivation film () is formed on one of the surfaces of the semiconductor substrate (). The n- and p-type amorphous semiconductor strips are arranged alternately as viewed along an in-plane direction of the semiconductor substrate () (Y-axis direction). The p-type amorphous semiconductor strips () have reduced-thickness regions () at some intervals as viewed along the length direction of the p-type amorphous semiconductor strips () (X-axis direction). The n-type amorphous semiconductor strips have a similar structure. The electrodes () are provided on the p-type amorphous semiconductor strips (), but not in areas where the reduced-thickness regions () have a positive curvature r with respect to the length direction of the reduced-thickness regions (). Electrodes on the n-type amorphous semiconductor strips have a similar arrangement.

Growing community of inventors

Sakai, Japan

Teruaki Higo