Hitachi, Ltd.

Teru Fujii

Asao Nishimura

Kosuke Inoue

Noriyuki Oroku

Takamichi Suzuki

Yasuyuki Nakajima

Masayuki Morishima

Toru Otsubo

Susumu Aiuchi

Takashi Kamimura

Minori Noguchi

Minoru Noguchi

In the conventional bump forming method that can be applied to a semiconductor device in which a large number of bumps are required to be formed, there are various limitations on the material of which the bumps are made, due to enough cubic volume of bumps and to small scattering of the bump height. According to the invention, solder balls and a tool having a large number of through-holes are used, and under the condition that the through-holes of the tool are aligned with the pads of the semiconductor device, the solder balls are charged into the through-holes, pressed to be fixed on the pads, and then reflowed to form bumps.

Method of forming bumps

In the conventional bump forming method that can be applied to a semiconductor device in which a large number of bumps are required to form, there are various limitations to the material of which the bumps are made, to enough cubic volume of bumps and to small scattering of the bump height. According to the invention, solder balls and a tool having a large number of through-holes are used, and under the condition that the through-holes of the tool are aligned with the pads of the semiconductor device, the solder balls are charged into the through-holes, pressed to be fixed on the pads, and then reflowed to form bumps.

A plasma processing method and an apparatus for carrying out the method in which a processing gas is introduced into a processing chamber, and periodically an amplitude modulated or frequency-modulated high-frequency voltage is applied to plasma generating means, to generate a discharge plasma and to carry out predetermined processing by the plasma.

Plasma processing method and apparatus for carrying out the same

The invention is directed to a dry-etching apparatus used for etching an aluminum wiring film formed on a wafer, and more particularly to a dry-etching apparatus which can remove chlorides deposited on the surface of the wafer during the dry etching thereof, as well as an etching resist film, without having to take the wafer out. This dry-etching apparatus is provided with an etching chamber, a vacuum antechamber attached to the etching chamber by a gate valve, and a post-treatment chamber attached to the vacuum antechamber. The apparatus is so formed that etched wafers removed to the vacuum antechamber can be sent therefrom to the post-treatment chamber, and then the post-treated wafers can be removed to the vacuum antechamber again, and then removed therefrom to the atmosphere.

Dry-etching apparatus

Growing community of inventors

Chigasaki, Japan

Teru Fujii