Arizona Board of Regents, a Body Corporate

Arizona State University

Other

Terry L Alford

David R Allee

James W Mayer

Sayantan Das

Ekta Misra

Lawrence T Clark

Cynthia S Bell

Michael A Nastasi

Constantine A Balanis

James T Aberle

Aritra Dhar

Mark Richards

Martin Mitan

Kevin Baugh

David P Pivin, Jr

Douglas C Thompson, Jr

Hyunchul Kim

Roy Stephen Rednour

Daniel Adams

A method for preparing a device having a film on a substrate is disclosed. In the method, a film is deposited on a polymeric substrate. The film includes at least one metal. A metal in the film is converted to a metal oxide using microwave radiation. One example device prepared by the method includes a polyethylene napthalate substrate and a film on the substrate, wherein the film includes a semiconducting copper oxide and silver as a dopant.

Thin film devices and methods for preparing thin film devices

A microwave-annealed indium gallium zinc oxide (IGZO) film and methods of making the same are disclosed. The methods may comprise: depositing an IGZO film onto a substrate; and microwave annealing the IGZO film to produce a microwave-annealed IGZO film.

Microwave-annealed indium gallium zinc oxide films and methods of making the same

A method for preparing a device having a film on a substrate is disclosed. In the method, a film is deposited on a substrate. The film includes a first and a second metal. The first and the second metals in the film are converted to an intermetallic compound using microwave radiation. One example device prepared by the method includes a silicon substrate and a film on the substrate, wherein the film includes semiconducting copper germanide as the intermetallic compound.

Thin film devices and low temperature process to make thin film devices

Some embodiments include an apparatus for testing flexible displays. The apparatus can include: (a) a first clamp configured to receive a first end of the flexible display; (b) a second clamp configured to receive a second end of the flexible display, wherein the second end of the flexible display is opposite the first end of the flexible display; and (c) a test column. Other embodiments and methods are disclosed herein.

Display bender and method of testing flexible display

Embodiments of flexible identification systems are described herein. Other embodiments and related methods are also disclosed herein.

Flexible identification systems and related methods

In semiconductor integrated circuit and device fabrication interconnect metallization is accomplished by a clad Ag deposited on a SiO2 level on a Si surface. The clad Ag has a layer of an alloy of Ag and Al (5 atomic %) contacting the SiO2, a layer of substantially pure Ag and an outer layer of the Ag and Al alloy. The alloy improves adhesion to the SiO2, avoids agglomeration of the Ag, reduces or eliminates diffusion at the SiO2 surface, reduces electromigration and presents a passive exterior surface.

Cladded silver and silver alloy metallization for improved adhesion electromigration resistance

An electronic apparatus uses a single crystalline silicon substrate disposed adjacent to a flexible substrate. The electronic apparatus may be a flexible flat panel display, or a flexible printed circuit board. The flexible substrate can be made from polymer, plastic, paper, flexible glass, and stainless steel. The flexible substrate is bonded to the single crystalline substrate using an ion implantation process. The ion implantation process involves the use of a noble gas such as hydrogen, helium, xenon, and krypton. A plurality of semiconductor devices are formed on the single crystalline silicon substrate. The semiconductor devices may be thin film transistors for the flat panel display, or active and passive components for the electronic device.

Flexible electronics using ion implantation to adhere polymer substrate to single crystal silicon substrate

Cladded silver and silver alloy metallization for improved adhesion and electromigration resistance

A method and apparatus for detecting electromigration at its outset includes a pair of conductive traces deposited on a substrate in an integrated circuit. A multiplicity of conductors are connected along the length of the traces. Current is passed through the traces and the resistances of the traces from one conductor connection to the next are continually monitored by observing the voltage drop from one conductor to the next. The connection of the conductors to the traces may be less than one micrometer apart. When resistance changes as a result of the onset of electromigration, the exact location can be determined and studied in optical or scanning electron micrographs.

Detection of electromigration in integrated circuits

Direct focused ion beam (FIB) mixing is given as a method for patterning of metal silicide structures on a silicon surface. This technique allows the fabrication of submicron structures without the use of resist-based lithography methods. VLSI containing metal silicide connects, interconnects and structures may be prepared by the method. Fast semiconductor devices having good circuit speed and reduced RC time delay including the technologies MEMS, MOSFET, CMOS, pMOS, nMOS and BiCMOS result.

Growing community of inventors

Phoenix, AZ, United States of America

Terry L Alford