Mcube, Inc.

Terrence Lee

Sudheer S Sridharamurthy

Shingo Yoneoka

Wenhua Zhang

Yoneoka Shingo

Sudheer Sridharamurthy

A multi-axis integrated MEMS inertial sensor device. The device can include an integrated 3-axis gyroscope and 3-axis accelerometer on a single chip, creating a 6-axis inertial sensor device. The structure is spatially configured with efficient use of the design area of the chip by adding the accelerometer device to the center of the gyroscope device. The design architecture can be a rectangular or square shape in geometry, which makes use of the whole chip area and maximizes the sensor size in a defined area. The MEMS is centered in the package, which is beneficial to the sensor's temperature performance. Furthermore, the electrical bonding pads of the integrated multi-axis inertial sensor device can be configured in the four corners of the rectangular chip layout. This configuration guarantees design symmetry and efficient use of the chip area.

Multi-axis integrated MEMS inertial sensing device on single packaged chip

A MEMS rate sensor device. In an embodiment, the sensor device includes a MEMS rate sensor configured overlying a CMOS substrate. The MEMS rate sensor can include a driver set, with four driver elements, and a sensor set, with six sensing elements, configured for 3-axis rotational sensing. This sensor architecture allows low damping in driving masses and high damping in sensing masses, which is ideal for a MEMS rate sensor design. Low driver damping is beneficial to MEMS rate power consumption and performance, with low driving electrical potential to achieve high oscillation amplitude.

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San Jose, CA, United States of America

Terrence Lee