Applied Materials, Inc.

Varian Semiconductor Equipment Associates, Inc.

Terrance Y Lee

Rajeev Bajaj

Todd J Egan

Edward W Budiarto

Jeongmin Lee

Juan Carlos Rocha-Alvarez

Ganesh Balasubramanian

Bok Hoen Kim

Amit Kumar Bansal

Barry Lee Chin

Jianhua Zhou

Thomas E Nowak

Xinhai Han

Jian J Chen

Ramprakash Sankarakrishnan

Mohamad A Ayoub

Nagarajan Rajagopalan

Zhijun Jiang

Michael Wenyoung Tsiang

Patrick Reilly

Masaki Ogata

Heung Lak Park

Shahid Shaikh

Sergey Starik

Dmitriy Panasyuk

Hung Chih Chen

Mehdi Vaez-Iravani

Thomas H Osterheld

Dale Robert Du Bois

Khokan Chandra Paul

Fred Conrad Redeker

Eric J Bergman

David Walter Groechel

Kwangduk Douglas Lee

John Lee Klocke

Semyon Sherstinsky

Robert J Steger

Rajesh Prasad

Kyu-Ha Shim

Harry S Whitesell

Petru N Nitescu

Maya Shendon

Tzu-Yu Liu

Ning Zhan

James Cournoyer

Samuel Luong

A method of fabricating a polishing layer of a polishing pad includes successively depositing a plurality of layers with a 3D printer, each layer of the plurality of polishing layers deposited by ejecting a pad material precursor from a nozzle and solidifying the pad material precursor to form a solidified pad material.

Printing a chemical mechanical polishing pad

A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

PECVD process

A substrate polishing apparatus is disclosed that includes a polishing platform having two or more zones, each zone adapted to receive a different slurry component. A substrate polishing system is provided having a holder to hold a substrate, a polishing platform having a polishing pad, and a distribution system adapted to dispense, in a timed sequence, at least two different slurry components selected from a group consisting of an oxidation slurry component, a material removal slurry component, and a corrosion inhibiting slurry component. Polishing methods and systems adapted to polish substrates are provided, as are numerous other aspects.

Chemical mechanical polishing apparatus and methods

Embodiments of the present disclosure relate to apparatus and methods for forming films having uniformity of thickness on substrates. Embodiments of the present disclosure may be used to measure thickness or other properties of films being deposited on a substrate without knowing beforehand the surface properties of the substrate. Embodiments of the present disclosure may be used to measure thickness or other properties of a plurality of layers being formed. For example, embodiments of the present disclosure may be used in measuring thickness of vertical memory stacks.

In-situ metrology method for thickness measurement during PECVD processes

A method may include forming a sacrificial mask on a device structure, the sacrificial mask comprising a carbon-based material. The method may further include etching memory structures in exposed regions of the sacrificial mask, implanting an etch-enhancing species into the sacrificial mask, and performing a wet etch to selectively remove the sacrificial mask at etch temperature, less than 350&#xb0; C.

Techniques for improved removal of sacrificial mask

Apparatus and method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

PECVD apparatus and process

A method of fabricating a polishing layer of a polishing pad includes successively depositing a plurality of layers with aD printer, each layer of the plurality of polishing layers deposited by ejecting a pad material precursor from a nozzle and solidifying the pad material precursor to form a solidified pad material.

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Oakland, CA, United States of America

Terrance Y Lee