International Business Machines Corporation

Terrance M Wright

Matthew J Rutten

Clifford Owen Morgan, Iii

Erick G Walton

John Edward Cronin

William J Cote

Carter W Kaanta

Pei-ing P Lee

Matthew Kilpatrick Miller

Karey L Holland

Donald Francis Canaperi

Mahadevaiyer Krishnan

Roger W Cheek

Rangarajan Jagannathan

Thomas J Hartswick

Douglas P Nadeau

Robert C Bausmith

Vertical clothes holder

Heated ice cream scoop

A colloidal silica slurry containing triethanolamine is used in a chemical mechanical polishing process to polish multiple material substrates, such as silicon wafers containing silicon oxide where a thin underlayer of silicon nitride is used as a stop layer. The colloidal silica slurry containing triethanolamine is capable of achieving an oxide to nitride selectivity during polishing up to a demonstrated ratio of 28:1.

Chemical mechanical polishing of multiple material substrates and slurry

A method and apparatus for Chemical-Mechanical Polishing of semiconductor wafers using various formulations of high viscosity slurry.

Method and apparatus for slurry polishing

The present invention relates to a chemical mechanical polishing (CMP) machine and method in which at least one polishing device is provided with a vertically-oriented polishing surface and a slurry delivery mechanism. As a result, the footprint of the machine is greatly reduced and the prevention of contaminants embedding in the polishing device can be promoted.

Vertical polishing device and method

A polishing pad and method of polishing with a chemical mechanical planarization apparatus includes providing a bulk polishing pad material having a front polishing surface side and a back side. The polishing pad further includes a polishing pad wear indicator for indicating a polishing pad wear during a life cycle of the polishing pad. The polishing pad wear indicator is formed on the back side of the bulk polishing pad material.

CMP polishing pad backside modifications for advantageous polishing

A gas discharge illumination device is prepared by encapsulating ionizable gas within microporous or nanoscale sealed cavities created within a matrix material. Upon exposure of said matrix material to an electric field, the ionizable gas becomes ionized and emits light. By incorporating several different ionizable gases into one matrix material, a display with different colors of light can be produced. The gas discharge illumination device can be fabricated by a variety of techniques including selective cavity formation with overcoating taking place in an ionizable gas ambient, and bubbling ionizable gas through the matrix material while it is in viscous form. The gas discharge illumination device can be used to form either active or passive displays, as a sensor for detecting electric fields, and in other applications.

Gas discharge devices including matrix materials with ionizable gas

A desired reagent is delivered to a workpiece undergoing a chemical mechanical polishing process with a chemical mechanical planarization apparatus. A slurry and polishing pad are provided for the polishing process. Reagent containing microcapsules are also provided, the microcapsules encapsulating a desired reagent. The workpiece is polished with a combination of the slurry, the polishing pad, and the microcapsules, wherein the encapsulated reagents are controllably released during the polishing step via manipulation of a polishing parameter. In one embodiment, the microcapsules are included in the slurry. In an alternate embodiment, the microcapsules are embedded within the polishing pad.

Polishing pad with controlled release of desired micro-encapsulated

A method for forming reactive metal silicide layers at two spaced locations on a silicon substrate, which layers can be of different thicknesses and/or of different reactive metals is provided. A sililcon substrate has a silicon dioxide layer formed thereon followed by the formation of a polysilicon layer on the silicon dioxide layer, followed by forming a layer of refractory metal, e.g. titanium on the polysilicon. A non-reflecting material, e.g. titanium nitride is formed on the refractory metal. Conventional photoresist techniques are used to pattern the titanium nitride, the titanium and polysilicon, and the titanium is reacted with the contacted polysilicon to form a titanium silicide. The portion of silicon dioxide overlying the silicon substrate is then removed and the exposed substrate is ion implanted to form source/drain regions. A second layer of refractory metal, either titanium or some other refractory metal, is deposited over the source/drain region, and either over the titanium nitride, or over the first formed silicide by first removing the titanium nitride. The second layer of refractory metal is reacted with the substrate at the source/drain region to form a refractory metal silicide, after which the unreacted refractory metal is removed.

Process for forming refractory metal silicide layers of different

A method for dry etching metals that form low volatility chlordes, in which Z-Cl reaction products are controllably introduced into a conventional Cl-based plasma independent of the workpiece. The Z-Cl products (e.g., AlCl.sub.3, GaCl.sub.3, etc.) are metal chlorides that have both electron acceptor and chloride donor properties. Thus, metals M (e.g., cobalt, copper and nickel) that usually produce low volatility chlorides can be controllably complexed to form high volatility Z.sub.x Cl.sub.y M.sub.z reaction products.

Etching metal films with complexing chloride plasma

A method for anisotropically etching a thick tungsten layer atop a thin underlayer comprised of titanium nitride, by exposure to a gaseous plasma comprised of a binary mixture of chlorine gas and oxygen, wherein oxygen comprises approximately 25%-45% of the mixture by volume. This plasma provides a combination of high tungsten etch rate, highly uniform etching, anisotropic profiles, and high etch rate ratio to underlaying glass passivation layers.

Growing community of inventors

Williston, VT, United States of America

Terrance M Wright