Rohm and Haas Electronic Materials Cmp Holdings, Inc.

Dow Global Technolgoies LLC

Teresa Brugarolas Brufau

Bainian Qian

Julia Kozhukh

George C Jacob

Jeffrey Borcherdt Miller

Diego Lugo

Yuhua Tong

Andrew Wank

David Michael Veneziale

Tony Quan Tran

Marc R Stack

Marty W DeGroot

Fengji Yeh

Bryan E Barton

Jeffrey James Hendron

Michael E Mills

Mohammad T Islam

Nan-Rong Chiou

Annette M Crevasse

Vere O Archibald

CMP polishing pads or layers made from a polyurethane reaction product of a reaction mixture comprising (i) a liquid aromatic isocyanate component comprising one or more aromatic diisocyanates or a linear aromatic isocyanate-terminated urethane prepolymer, and (ii) a liquid polyol component comprising a) one or more polymeric polyols, b) from 12 to 40 wt. %, based on the total weight of the liquid polyol component, of a curative mixture of one or more small chain difunctional polyols having from 2 to 9 carbon atoms, a liquid aromatic diamine, wherein the mole ratio of liquid aromatic diamine to the total moles of small chain difunctional polyols and liquid aromatic diamine ranges from 15:85 to 40:60, wherein, the reaction mixture comprises 48 to 68 wt. % hard segment materials.

Formulations for chemical mechanical polishing pads with high planarization efficiency and CMP pads made therewith

The present invention provides CMP polishing pads or layers having a Shore DO (15 second) hardness of from 40 to 80 made from a two-component reaction mixture of (i) a liquid aromatic isocyanate component comprising one or more aromatic diisocyanates or a linear aromatic isocyanate-terminated urethane prepolymer, and (ii) a liquid polyol component comprising a) one or more polymeric polyols, b) from 15 to 36 wt. %, based on the total weight of the liquid polyol component, of one or more small chain difunctional polyols having from 2 to 6 carbon atoms, c) from 0 to 25 wt. %, based on the total weight of the liquid polyol component, of a liquid aromatic diamine which is a liquid at standard pressure and at 40° C., and d) an amount of water or CO-amine adduct sufficient to reduce the density of a CMP polishing pad made from the two-component reaction mixture to from 0.2 to 0.50 g/mL, wherein the reaction mixture comprises 60 to 75 wt. % of hard segment materials, based on the total weight of the reaction mixture.

Formulations for high porosity chemical mechanical polishing pads with high hardness and CMP pads made therewith

CMP polishing pads or layers made from a polyurethane reaction product of a reaction mixture comprising (i) a liquid aromatic isocyanate component comprising one or more aromatic diisocyanates or a linear aromatic isocyanate-terminated urethane prepolymer, and (ii) a liquid polyol component comprising a) one or more polymeric polyols, b) from 12 to 40 wt. %, based on the total weight of the liquid polyol component, of a curative mixture of one or more small chain difunctional polyols having from 2 to 9 carbon atoms, a liquid aromatic diamine, wherein the mole ratio of the total moles of hydroxyl and amino moieties in the liquid polyol, small chain difunctional polyols and liquid aromatic diamine to mole of isocyanate in the aromatic diisocyanates or linear aromatic isocyanate-terminated urethane prepolymer ranges from 1.0:1.0 to 1.15:1.0. The polishing layer is capable of forming a total texture depth, as measured by Sdr, a parameter defined by the ISO 25178 standard, upon treatment by a surface conditioning disk, in the range of from 0 to 0.4. Also disclosed is a chemical mechanical polishing method using the polishing pad together with a ceria abrasive slurry.

Chemical mechanical polishing pad and polishing method

CMP polishing pads or layers made from a polyurethane reaction product of a reaction mixture comprising (i) a liquid aromatic isocyanate component comprising one or more aromatic diisocyanates or a linear aromatic isocyanate-terminated urethane prepolymer, and (ii) a liquid polyol component comprising a) one or more polymeric polyols, b) from 12 to 40 wt. %, based on the total weight of the liquid polyol component, of a curative mixture of one or more small chain difunctional polyols having from 2 to 9 carbon atoms, a liquid aromatic diamine, wherein the mole ratio of the total moles of hydroxyl and amino moieties in the liquid polyol, small chain difunctional polyols and liquid aromatic diamine to mole of isocyanate in the aromatic diisocyanates or linear aromatic isocyanate-terminated urethane prepolymer ranges from 1.0:1.0 to 1.15:1.0. The polishing layer is capable of forming a total texture depth, as measured by Sdr, a parameter defined by the ISO 25178 standard, upon treatment by a surface conditioning disk, in the range of from 0 to 0.4.

Formulations for chemical mechanical polishing pads and CMP pads made therewith

The present invention provides a chemical mechanical (CMP) polishing pad for planarizing at least one of semiconductor, optical and magnetic substrates comprising a polishing layer that has a geometric center, and in the polishing layer a plurality of offset circumferential grooves, such as circular or polygonal grooves, which have a plurality of geometric centers and not a common geometric center. In the polishing layer of the present invention, each circumferential groove is set apart a pitch distance from its nearest or adjacent circumferential groove or grooves; for example, the pitch increases on the half or hemisphere of the polishing layer that is farthest from the geometric center of its innermost circumferential groove and decreases on the half of the polishing layer nearest that geometric center. Preferably, the polishing layer contains an outermost circumferential groove that is complete and continuous.

Chemical mechanical polishing pads having offset circumferential grooves for improved removal rate and polishing uniformity

The present invention provides a chemical mechanical (CMP) polishing pad for polishing, for example, a semiconductor substrate, having one or more endpoint detection windows (windows) which at a thickness of 2 mm would have a UV cut-off at a wavelength of 325 nm or lower which are the product of a reaction mixture of (A) from 30 to 56 wt. % of one or more cycloaliphatic diisocyanates or polyisocyanates with (B) from 43 to 69.9999 a polyol mixture of (i) a polymeric diol having an average molecular weight of from 500 to 1,500, such as a polycarbonate diol for hard windows and a polyether polyol for soft windows and (ii) a triol having an average to molecular weight of from 120 to 320 in a weight ratio of (B)(i) polymeric diol to (B)(ii) triol ranging from 1.6:1 to 5.2:1, and a catalyst, preferably a secondary or tertiary amine or bismuth neodecanoate, all weight percent's based on the total solids weight of the reaction mixture.

Aliphatic polyurethane optical endpoint detection windows and CMP polishing pads containing them

A method of forming a chemical mechanical polishing pad polishing layer is provided, including: providing a mold having a base with a negative of a groove pattern; providing a poly side (P) liquid component; providing an iso side (I) liquid component; providing a pressurized gas; providing an axial mixing device; introducing the poly side (P) liquid component, the iso side (I) liquid component and the pressurized gas to the axial mixing device to form a combination; discharging the combination from the axial mixing device at a velocity of 5 to 1,000 m/sec toward the base; allowing the combination to solidify into a cake; deriving the chemical mechanical polishing pad polishing layer from the cake; wherein the chemical mechanical polishing pad polishing layer has a polishing surface with the groove pattern formed into the polishing surface; and wherein the polishing surface is adapted for polishing a substrate.

Method of making polishing layer for chemical mechanical polishing pad

A method of forming a chemical mechanical polishing pad polishing layer is provided, including: providing a mold having a base with a negative of a groove pattern; providing a poly side (P) liquid component; providing an iso side (I) liquid component; providing a pressurized gas; providing an axial mixing device; introducing the poly side (P) liquid component, the iso side (I) liquid component and the pressurized gas to the axial mixing device to form a combination; discharging the combination from the axial mixing device at a velocity of 10 to 300 m/sec toward the base; allowing the combination to solidify into a cake; deriving the chemical mechanical polishing pad polishing layer from the cake; wherein the chemical mechanical polishing pad polishing layer has a polishing surface with the groove pattern formed into the polishing surface; and wherein the polishing surface is adapted for polishing a substrate.

A method of forming a chemical mechanical polishing pad composite polishing layer is provided, including: providing a first polishing layer component of a first continuous non-fugitive polymeric phase having a plurality of periodic recesses; discharging a combination toward the first polishing layer component at a velocity of 5 to 1,000 m/sec, filling the plurality of periodic recesses with the combination; allowing the combination to solidify in the plurality of periodic recesses forming a second non-fugitive polymeric phase giving a composite structure; and, deriving the chemical mechanical polishing pad composite polishing layer from the composite structure, wherein the chemical mechanical polishing pad composite polishing layer has a polishing surface on the polishing side of the first polishing layer component; and wherein the polishing surface is adapted for polishing a substrate.

Method of making composite polishing layer for chemical mechanical polishing pad

A method of forming a chemical mechanical polishing pad composite polishing layer is provided, including: providing a first polishing layer component of a first continuous non-fugitive polymeric phase having a plurality of periodic recesses; discharging a combination toward the first polishing layer component at a velocity of 10 to 300 msec, filling the plurality of periodic recesses with the combination; allowing the combination to solidify in the plurality of periodic recesses forming a second non-fugitive polymeric phase giving a composite structure; and, deriving the chemical mechanical polishing pad composite polishing layer from the composite structure, wherein the chemical mechanical polishing pad composite polishing layer has a polishing surface on the polishing side of the first polishing layer component; and wherein the polishing surface is adapted for polishing a substrate.

A chemical mechanical polishing pad is provided, comprising: a chemical mechanical polishing layer having a polishing surface; wherein the chemical mechanical polishing layer is formed by combining (a) a poly side (P) liquid component, comprising: an amine-carbon dioxide adduct; and, at least one of a polyol, a polyamine and a alcohol amine; and (b) an iso side (I) liquid component, comprising: polyfunctional isocyanate; wherein the chemical mechanical polishing layer has a porosity of &#x2267;10 vol %; wherein the chemical mechanical polishing layer has a Shore D hardness of &#x3c;40; and, wherein the polishing surface is adapted for polishing a substrate. Methods of making and using the same are also provided.

Chemical mechanical polishing pad and method of making same

A chemical mechanical polishing pad is provided containing: a polishing layer having a polishing surface; wherein the polishing layer comprises a first continuous non-fugitive polymeric phase and a second non-fugitive polymeric phase; wherein the first continuous non-fugitive polymeric phase has a plurality of periodic recesses; wherein the plurality of periodic recesses are occupied with the second non-fugitive polymeric phase; wherein the first continuous non-fugitive polymeric phase has an open cell porosity of &#x2266;6 vol %; wherein the second non-fugitive polymeric phase contains an open cell porosity of &#x2267;10 vol %; and, wherein the polishing surface is adapted for polishing a substrate.

Chemical mechanical polishing pad composite polishing layer formulation

A chemical mechanical polishing pad is provided containing: a polishing layer having a polishing surface; wherein the polishing layer comprises a first continuous non-fugitive polymeric phase and a second continuous non-fugitive polymeric phase; wherein the first continuous non-fugitive polymeric phase has a plurality of interconnected periodic recesses; wherein the plurality of interconnected periodic recesses are occupied with the second continuous non-fugitive polymeric phase; wherein the first continuous non-fugitive polymeric phase has an open cell porosity of &#x2266;6 vol %; wherein the second continuous non-fugitive polymeric phase contains an open cell porosity of &#x2267;10 vol %; and, wherein the polishing surface is adapted for polishing a substrate.

Composite polishing layer chemical mechanical polishing pad

A chemical mechanical polishing pad is provided containing: a polishing layer having a polishing surface; wherein the polishing layer comprises a continuous non-fugitive polymeric phase and a discontinuous non-fugitive polymeric phase; wherein the continuous non-fugitive polymeric phase has a plurality of periodic recesses; wherein the plurality of periodic recesses are occupied with the discontinuous non-fugitive polymeric phase; wherein the continuous non-fugitive polymeric phase has an open cell porosity of &#x2266;6 vol %; wherein the discontinuous non-fugitive polymeric phase contains an open cell porosity of &#x2267;10 vol %; and, wherein the polishing surface is adapted for polishing a substrate.

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Philadelphia, PA, United States of America

Teresa Brugarolas Brufau