Advanced Micro Devices Corporation

Terence C Tong

Christopher F Lyons

Patrick K Cheung

Minh Van Ngo

Ramkumar Subramanian

Mark T Ramsbey

Angela Tai Hui

Sergey D Lopatin

Matthew S Buynoski

James J Xie

Ashok M Khathuria

Jane V Oglesby

A method of making organic memory devices containing organic memory cells made of two electrodes with a controllably conductive media between the two electrodes is disclosed. The organic memory devices are made using a patternable, photosensitive dielectric that facilitates formation of the memory cells and mitigates the necessity of using photoresists.

Memory element formation with photosensitive polymer dielectric

The present invention provides a method to fabricate an organic memory device, wherein the fabrication method includes forming a lower electrode, depositing a passive material over the surface of the lower electrode, applying an organic semiconductor material over the passive material, and operatively coupling the an upper electrode to the lower electrode through the organic semiconductor material and the passive material. Patterning of the organic semiconductor material is achieved by depositing a silicon-based resist over the organic semiconductor, irradiating portions of the silicon-based resist and patterning the silicon-based resist to remove the irradiated portions of the silicon-based resist. Thereafter, the exposed organic semiconductor can be patterned, and the non-irradiated silicon-based resist can be stripped to expose the organic semiconductor material that can be employed as a memory cell for single and multi-cell memory devices. A partitioning component can be integrated with the memory device to facilitate stacking memory devices and programming, reading, writing and erasing memory elements.

Silicon containing material for patterning polymeric memory element

A method for making a semiconductor structure, includes patterning a photoresist layer to form both a zero marks pattern and a well implant mask pattern. The photoresist layer is on a region of a substrate.

Method of forming zero marks

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Sunnyvale, CA, United States of America

Terence C Tong