US Government As Represented by the Secretary of the Army

Terence Burke

Maurice Weiner

Lawrence J Bovino

Anderson H Kim

Robert A Lux

James F Harvey

Robert J Zeto

Jian H Zhao

Lawrence E Kingsley

Hardev Singh

Clarence G Thornton

The present invention comprises a semi-insulating layer of GaAs with p+ and layers of aluminum gallium arsenide AlGaAs grown on one side of the semi-insulating GaAs and with p and n+ layers of AlGaAs grown on the other side of the semi-insulating GaAs. Ohmic contacts are grown on both sides of the thyristor as well as low temperature GaAs to provide for surface passivity.

AlGaAs/GaAs thyristor

The present invention describes a method of explosively vaporizing a piece f semiconductor material in a plasma formed by a fast, high voltage current pulse. The semiconductor material may be formed from crystalline, polycrystalline, or amorphous forms of semiconductor material. After the semiconductor material is vaporized, it coalesces as the plasma begins to cool and is deposited in a collection system. The size and composition of the microparticles formed by this process can be controlled by conditioning the plasma in predetermined manners. In particular, impurities can be introduced either in the target material, in gas introduced in the plasma, or in the gas through which the coalescing microparticles travel prior to deposition.

Fabrication technique for silicon microclusters using pulsed electrical

A high energy, optically controlled kilovolt semiconductor switch is provd including a bulk piece of high resistivity semiconductor for illumination by a high speed laser, said semiconductor having a thick highly doped epitaxial layer of P+ impurity grown on one side of the semiconductor, and a thick highly doped epitaxial layer of N+ impurity grown on the opposite side of the semiconductor with metallic electrodes deposited on the respective epitaxial layers using standard ohmic contact procedures.

High energy optically controlled kilovolt semiconductor switch

A high power solid state source of microwave and millimeter wave signals is provided by an optically triggered body of bulk semiconductor material selected from the Group III-V compounds including GaAs, Cr:GaAs, and Fe:InP and having a relatively long gap length which is in the order of 0.5 to 10.0 mm as well as having a resistivity which is greater than 1.times.10.sup.7 ohm-cm. The device is further dc biased to a field of between 15 kV/cm and 35 kV/cm. Under such conditions, a very low dc current flows without any oscillatory behavior; however, illumination of the semiconductor body with a fast rising optical pulse having a wavelength suitable for carrier generation causes electrons to be lifted to the conduction band which is accompanied by a rapid reduction of the resistivity. At the same time, the electric field across the gap length decreases to a value just above the oscillation threshold whereupon high power RF oscillations are generated whose frequency is a function of the recombination time of the excited carriers.

Optically triggered bulk device Gunn oscillator

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Ocean, NJ, United States of America

Terence Burke