Sumitomo Heavy Industries, Ltd.

Teppei Tanaka

Takeshi Aiba

Satoshi Aizawa

A process monitor includes a photodetector that separately measures intensities of radiant light from a semiconductor member being annealed, in a plurality of wavelength ranges that are different from each other, and a processing device that obtains a physical quantity related to the semiconductor member that changes due to annealing, based on the intensities in the plurality of wavelength ranges measured by the photodetector.

Process monitor and process monitoring method

There is provided an annealing device including a heating unit that heats a surface of an annealing object to temporarily melt an outer layer portion, a sensor that detects thermal radiation light from the annealing object heated by the heating unit, and a processing unit that estimates an annealing result of the annealing object on the basis of a waveform showing a temporal change in an intensity of the thermal radiation light detected by the sensor.

Annealing device and annealing method

There is provided a laser machining device including a heat radiation measurement unit that measures intensity of heat radiation of a workpiece irradiated with a laser beam, and a determination unit that determines a state of a target by defining an object used in machining work as the target, based on the intensity of the heat radiation measured by the heat radiation measurement unit.

Laser machining device

A chuck plate is disposed between an annealing object and a holding table. The chuck plate has a function of attenuating thermal radiation light radiated from the annealing object and directed toward the holding table. The use of the chuck plate makes it possible to increase the accuracy of temperature measured by detection of thermal radiation light.

Chuck plate, annealing device, and annealing method

A laser beam from a laser optical system is incident onto a semiconductor wafer. Thermal radiation light from the semiconductor wafer is incident onto an infrared detector. The infrared detector outputs a signal based on the intensity of the thermal radiation light. A processing device calculates a sheet resistance of the semiconductor wafer that is annealed by the laser beam on the basis of an output value of the infrared detector, and outputs a calculation value of the sheet resistance to an output device.

Growing community of inventors

Kanagawa, Japan

Teppei Tanaka